• 대한화학회지
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• 제44권6호
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• pp.513-517
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• 2000

TTF (tetrathiafulvalene) 유도체의 전구체로서 5,6-dimethyl-1,3-dithiolo[4,5-b][1,4]dithiin-2-thione (화합물 3)을 로손반응에 의하여 합성하였다. 치환기의 종류에 따라 1,4-dithiin이나 티오펜이 포함된 두 가지의 서로 다른 생성물이 얻어졌고, 이들은 $^{13}C$ NMR과 고 분해능 전자충돌(HREI) 질량분석 분광학으로 특성화하였다. 화합물 3의 합성은 X-선 구조분석으로도 확인되었다. 결정학적 자료: 삼사정계, 공간군 P1, a=4.145(2)${\AA}$, b=10.600(2)${\AA}$, c=12.279(2)${\AA}$, ${\alpha}=71.440(10)^{\circ},\;{\beta}=84.30(2)^{\circ},\;{\gamma}=87.31(2)^{\circ}$, Z=2, $R(wR_2$)=0.0559(0.1416). 두 가지 생성물의 생성 기구를 비교하여 설명하였다.

• 대한화학회지
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• 제44권6호
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• pp.507-512
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• 2000

질산구리와 2,2'-dipyridylbenzylamine(dpb)를 에탄올 용액에서 반응시켜 새로운 구리 착화합물, $Cu(dpb)(NO_3)_2$(1)를 합성하였다. 아세토니트릴 용액에서 재결정하여 단결정을 얻었으며 XRD법을 이용하여 결정 구조를 확인하였다. 결정은 orthorhombic 형태로서 $P2_1/c$ 군에 속하고 그 밖의 자료들은 다음과 같다. a=12.501(9)${\AA}$, b=9.231(10)${\AA}$, c=17.119(6)${\AA}$, ${\alpha}=90^{\circ},\;{beta}=107.33(4)^{\circ},\;{\gamma}=90^{\circ},\;V=1885.8(2){\AA}^3,\;R_1=0.0647,\;_{w}R_2=0.1866$, Z=4. EPR, NMR, UV/VIS, 그리고 IR 등의 분광학적인 확인법에 의하여, 합성된 화합물은 디피리딜아민 유도체를 리간드로 하는 전형적인 상자성 구리(II) 배위 화합물임을 확인하였다.

• Molecules and Cells
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• 제39권6호
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• pp.495-500
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• 2016

We have solved the crystal structure of a predicted fructose-specific enzyme $IIB^{fruc}$ from Escherichia coli ($EcEIIB^{fruc}$) involved in the phosphoenolpyruvate-carbohydrate phosphotransferase system transferring carbohydrates across the cytoplasmic membrane. $EcEIIB^{fruc}$ belongs to a sequence family with more than 5,000 sequence homologues with 25-99% amino-acid sequence identity. It reveals a conventional Rossmann-like ${\alpha}-{\beta}-{\alpha}$ sandwich fold with a unique ${\beta}$-sheet topology. Its C-terminus is longer than its closest relatives and forms an additional ${\beta}$-strand whereas the shorter C-terminus is random coil in the relatives. Interestingly, its core structure is similar to that of enzyme $IIB^{cellobiose}$ from E. coli ($EcIIB^{cel}$) transferring a phosphate moiety. In the active site of the closest $EcEIIB^{fruc}$ homologues, a unique motif CXXGXAHT comprising a P-loop like architecture including a histidine residue is found. The conserved cysteine on this loop may be deprotonated to act as a nucleophile similar to that of $EcIIB^{cel}$. The conserved histidine residue is presumed to bind the negatively charged phosphate. Therefore, we propose that the catalytic mechanism of $EcEIIB^{fruc}$ is similar to that of $EcIIB^{cel}$ transferring phosphoryl moiety to a specific carbohydrate.

• 한국재료학회지
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• 제1권2호
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• pp.99-104
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• 1991

Ta-silicide의 게이트 전극 및 비트라인(bit line)으로의 사용가능성을 알아보기 위하여 As, P, $BF_2$가 $5{\times}10^15cm^-2$의 농도로 이온주입된 다결정 실리콘에 탄탈륨을 스퍼터링으로 증착한 후 급속 열처리로 Ta-silicide를 형성하였다. 형성된 Ta-silicide의 특성은 4-탐침법, X-rayghlwjf, SEM 단면사진과 ${\alpha}$-step으로 조사하였으며, 불순물들의 거동은 Secondary Ion Mass Spectroscopy(SIMS)로 알아보았다. $TaSi_2$의 형성은 $800^{\circ}C$에서 시작하며 $1000^{\circ}C$ 이상에서 완료됨을 알았다. 형성된 $TaSi_2$층으로 out-diffusion 하였다.

• Korean Chemical Engineering Research
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• 제56권1호
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• pp.125-132
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• 2018

유전체 장벽 방전 반응기에서 규칙적인 메조기공 갖는 촉매를 사용하여 플라즈마 에너지를 이용한 메탄의 직접전환반응 연구를 수행하였다. 촉매는 MgO/OMA (ordered mesoporous alumina), $MgO/{\gamma}-Al_2O_3$와 $MgO/{\alpha}-Al_2O_3$를 사용하여 반응하였다. Pulse 고전압을 이용한 플라즈마 반응기에서 촉매 MgO/OMA를 사용하였을 때 $C_2$ 화합물의 선택도는 67%로 최고의 성능을 나타내었다. 금속산화물 종류, 규칙적인 메조기공 구조, 알루미나의 상변화 그리고 전원공급방식에 따른 효과를 고려하여 반응기 성능 및 생성물 분포를 비교하였다. BET (Brunauer, Emmett, Teller), X 선 회절, 주사전자현미경, 열 무게 분석으로 촉매의 반응 전후의 특성을 분석하였다.

• 한국표면공학회지
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• 제42권4호
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• pp.161-168
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• 2009

Effects of TiN/Ti multilayer coating on the Ti-30Ta-xZr alloy surface were studied by using various experiments. The Ti-30Ta containing Zr (5, 10 and 15 wt%) were melted 10 times to improve chemical homogeneity by using a vacuum furnace. And then samples were homogenized for 24 hrs at $1000^{\circ}C$. The specimens were prepared for TiN/Ti coating by cutting and polishing. The prepared specimens were coated with TiN/Ti multilayers by using DC magnetron sputtering method. The analyses of coated surface and coated layer were carried out by field emission scanning electron microscope(FE-SEM), EDX, and X-ray diffractometer(XRD). From the microstructure and XRD analysis of Ti-30Ta-xZr alloys, The equiaxed structure was changed to needle-like structure with increasing Zr content. And $\alpha$-peak and elastic modulus increased as Zr content increased. The $\alpha$ and $\beta$ phase predominantly were found in the specimen containing high Zr content. According to the analysis of TiN/Ti coating layer, the surface defects and structures of Ti-30Ta-xZr were covered with TiN/Ti coating layer and surface roughness decreased.

• 공업화학
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• 제23권2호
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• pp.138-142
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• 2012

블루 안료 15 : 6이라 불리는 ${\epsilon}$ 결정상의 동프탈로시아닌(${\epsilon}$-CuPc)는 LCD 패널에서 청색화소를 제공하는 중요한 소재로써, 본 연구에서는 ${\epsilon}$-CuPc 시료를 ${\epsilon}$-CuPc 나노 입자를 seed로 이용하는 방법으로 여러 조건에서 합성하여 적합한 용매 및 온도조건 등을 규명하였고, 이를 미리 합성한 ${\alpha}$ 및 ${\beta}$ 결정상의 CuPc 시료들과 비교함으로써 ${\epsilon}$-CuPc 시료의 결정상, 결정 순도, 합성 수율 및 미세구조를 상호 비교 분석하였다. 시료들의 화학 구조 및 결정 구조는 푸레어 변환 적외선(FT-IR) 분광기 및 X선 회절 분석기(XRD)를 이용하여 각각 비교 분석하였다. 또한, 입자의 형상 및 크기는 주사 전자현미경(FE-SEM)으로 비교 분석하였고, 열적 특성은 열중량분석기(TGA)를 이용하여 비교 분석하였다.

• 한국표면공학회지
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• 제45권3호
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• pp.106-110
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• 2012

Oblique angle deposition (OAD) is a physical vapor deposition where incident vapor flux arrives at non-normal angles. It has been known that tilting the substrate changes the properties of the film, which is thought to be a result of morphological change of the film. In this study, OAD has been applied to prepare single and multilayer TiN films by cathodic arc deposition. TiN films have been deposited on cold-rolled steel sheets and stainless steel sheet. The deposition angle as well as substrate temperature and substrate bias was changed to investigate their effects on the properties of TiN films. TiN films were analyzed by color difference meter, scanning electron microscopy, nanoindenter and x-ray diffraction. The color of TiN films was not much changed according to the deposition conditions. The slanted and zigzag structures were observed from the single and multilayer films. The relation between substrate tilting angle (${\alpha}$) and the growth column angle (${\beta}$) followed the equation of $tan{\alpha}=2tan{\beta}$. The indentation hardness of TiN films deposited by OAD was low compared with the ones prepared at normal angle. However, it has been found that $H^3/E^2$ ratio of 3-layer TiN films prepared at OAD condition was a little higher than the ones prepared at normal angle, which can confirm the robustness of prepared films.

• Bulletin of the Korean Chemical Society
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• 제14권1호
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• pp.82-86
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• 1993

Two crystal structures of dehydrated $Ag_{3.3}Ca_{4.35}-A ({\alpha} = 12.256(2){\AA})$ and of its ethylene sorption complex (${\alpha} = 12.259(2){\AA}$) have been determined by single-crystal X-ray diffraction techniques in the cubic space group Pm3m at 21(l)$^{\circ}$C. Both crystals were dehydrated at 360$^{\circ}$C and $2{\times}10^{-6}$ Torr for 2 days and one crystal was treated with 200 Torr of ethylene at 24(2)$^{\circ}$C. The structures were refined to final error indices, $R_1$=O.065 and $R_2$ = 0.088 with 202 reflections and $R_1$=0.049 and $R_2$ = 0.044 with 259 reflections, respectively, for which I>3${\sigma}$(I). In these structures, all Ag$^+$ and Ca$^{2+}$ ions are located on two and three different threefold axes associated with 6-ring oxygens, respectively. In $Ag_{3.3}Ca_{4.35}-A{\cdot}6.65\;C_2H_4,\;3.3\;Ag^+\;and\;3.35\;Ca^{2+}$ ions are recessed 1.09 ${\AA}$ and 0.21 ${\AA}$, respectively, into the large cavity from the (111) plane at O(3). Each Ag$^+$ and Ca$^{2+}$ ion in the large cavity forms a complex with one $C_2H_4$$^{2+}$ ions and ethylene molecules are longer than those between Ag$^+$ ions and ethylene molecules.

• 열처리공학회지
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• 제32권6호
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• pp.263-269
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• 2019

The mechanism of microstructure and hardness changes during mill annealing of Ti-6Al-4V alloy was investigated. The annealing heat treatments were performed at $675{\sim}795^{\circ}C$ in vacuum for 2 hours, followed by air cooling. The microstructure was observed by using an optical microscope and X-ray diffraction, and hardness was measured by using a Rockwell hardness tester and micro Vickers hardness tester. The average grain size becomes smaller at $675^{\circ}C$ to $735^{\circ}C$ due to the formation of new grains rather than grain growth, but becomes larger at $735^{\circ}C$ to $795^{\circ}C$ due to growth of the already-formed grains rather than formation of new grains. The mill annealing temperature becomes higher, the ${\beta}$ phase fraction decreases and ${\alpha}$ phase fraction increases at room temperature. This is because the higher annealing temperature, the smaller amount of V present in the ${\beta}$ phase, and thus the ${\beta}$ to ${\alpha}$ transformation occurs more easily when cooled to room temperature. As the mill annealing temperature increases, the hardness value tends to decrease, mainly due to resolution of defects such as dislocations from $675^{\circ}C$ to $735^{\circ}C$ and due to grain growth from $735^{\circ}C$ to $795^{\circ}C$, respectively.