• Journal of Korean Society of Coastal and Ocean Engineers
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• v.5 no.4
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• pp.318-328
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• 1993

A series of long wave measurements was made in the region of Shikotan Island (the South Kuril Islands) during 1990-1992: 7 bottom pressure stations were installed in 5 bays and inlets of Shikotan and 3 precise microbarographs were situated at the shore. The observations were taken in order to monitor tsunami waves, estimate resonance features of coastal topography, and investigate seiche generation mechanism. It was found that forced long waves dominate in the motions with periods exceeding 2 hours, freely propagating long waves prevail at periods of 30-120 min and eigen-oscillations of bays (seiches) are the predominant type of long waves at periods less than 30 min. The Helmholtz mode with period 30 min in Krabovaya Bay and 18.5 min in Malokurilskaya Bay is the most important type of wave motion in the inner Shikotan basins. There is a good correlation between passages of atmospheric disturbances and generation of seiches near the coast of Shikotan Island. In particular, jumps in atmospheric pressure excite seiches in different bays simultaneously, in each one with the corresponding dominant period. The atmospheric spectra were remarkably smooth and stable, and could be described by a $\omega$$^{-2}$26/ power law.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.1
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• pp.27-31
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• 2008

Due to the increasing need for miniaturization of electronic device, embedded resistor technology using thick film resistance paste to embed resistors currently mounted on the board thus effectively reducing board size, is being extensively researched. In this research, thick film resistor paste having $0.35{\sim}4k{\Omega}/sq$ range of resistivity were fabricated using mixtures of carbon black and epoxy resin. In order to adjust the TCR (temperature coefficient resistivity), TCR modifiers such as Ni-Cr alloy, $SiO_2$ powder were added and were able to improve on TCR value with $100ppm/^{\circ}C$. Finally embedded resistor board using thick film resistance paste were fabricated. Stable resistivity value and reliability results were achieved.

• Journal of the Korean Magnetics Society
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• v.12 no.3
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• pp.109-116
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• 2002

We designed the flyback planar transformer, which had 8 W capacity, with 70 V input voltage and 8.2 V output voltage for the establishment of design method and the confirmation of application possibility. The numerical value of inductance measured under the switching frequency of 120 kHz was 1650 $\mu$H, which was the inductance efficiency of'85∼87% against theoretical value. The A.C. resistance of primary and secondary coil was 4.2 Ω and 0.25 Ω respectively, On the other hand, the quality factor for each wound numbers showed quite a high value of 158 and 75 respectively. And the Coupling Factor was 0.96∼0.97 under 120 kHz switching frequency. The inductance rapidly increased as the thickness of the core plane increased until it became 1.4 mm but under the thickness more than 1.4 mm, there was no substantial change. Therefore, the critical value of the plane thickness of core was 1.4 mm. And the shape of the output wave of the planar transformer at 70V input voltage was a stable square wave.

• Korean Journal of Materials Research
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• v.9 no.5
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• pp.503-508
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• 1999

We have investigated the physical and diffusion barrier property of Ti-Si-N film for Cu metallization. The ternary compound was deposited by using reactive rf magnetron sputtering of a TiSi$_2$target in an Ar/$N_2$gas mixture. Resistivities of the films were in range of 358$\mu$$\Omega$-cm, to 307941$\mu$$\Omega$-cm, and tended to increase with increasing the $N_2$/Ar flow rate ratio. The crystallization of the Ti-Si-N compound started to occur at 100$0^{\circ}C$ with the phases of TiN and Si$_3$N$_4$identified by using XRD(X-ray Diffractometer). The degree of the crystallization was influenced by the $N_2$/Ar flow ratio. The diffusion barrier property of Ti-Si-N film for Cu metallization was determined by AES, XRD and etch pit by secco etching, revealing the failure temperature of 90$0^{\circ}C$ in 43~45at% of nitrogen content. In addition, the very thin compound (10nm) with 43~45at% nitrogen content remained stable up to $700^{\circ}C$. Furthermore, thermal treatment in vacuum at $600^{\circ}C$ improved the barrier property of the Ti-Si-N film deposited at the $N_2$(Ar+$N_2$) ratio of 0.05. The addition of Ti interlayer between Ti-Si-N films caused the drastic decrease of the resistivity with slight degradation of diffusion barrier properties of the compound.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.981-983
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• 1999

In this paper, the electrical characteristics of $\lambda$ vibration-mode piezoelectric transformer for applying to CCFL driving inverter was investigated. Piezoelectric transformer was made of PZT - PMN - 0.5wt% $Nb_{2}O_{5}$ composition. As a results of the electrical characteristics of piezoelectric transformer, when applied voltage was $35[V_{rms}]$ in $100[k{\Omega}]$ load resistance, output voltage was about $710[V_{rms}]$ and output power was more than 2[W]. As output power increased, step-up ratio and temperature was very stable until output power was 2.5[W]. Also, Efficiency was maximum in $70[k{\Omega}]$ load resistance, and about 89[%]. Also, when CCFL was used as load, the maintaining voltage was $700[V_{rms}]$ and the luminescence was $2000[cd/m^2]$ in applying $25[V_{rms}]$ to piezoelectric transformer. Conclusively, piezoelectric transformer fabricated in this paper can be applied to piezoelectric inverter for CCFL driving.

• Journal of Microbiology and Biotechnology
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• v.20 no.3
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• pp.574-578
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• 2010

Archaebacteria Sulfolobus acidocaldarius contains the highly thermophilic cytochrome P450 enzyme (CYP119). CYP119 possesses stable enzymatic activity at up to $85^{\circ}C$. However, this enzyme is still considered as an orphan P450 without known physiological function with endogenous or xenobiotic substrates. We characterized the regioselectivity of lauric acid by CYP119 using the auxiliary redox partner proteins putidaredoxin (Pd) and putidaredoxin reductase (PdR). Purified CYP119 protein showed a tight binding affinity to lauric acid ($K_d=1.1{\pm}0.1{\mu}M$) and dominantly hydroxylated (${\omega}-1$) position of lauric acid. We determined the steady-state kinetic parameters; $k_{cat}$ was 10.8 $min^{-1}$ and $K_m$, was 12 ${\mu}M$. The increased ratio to $\omega$-hydroxylated production of lauric acid catalyzed by CYP119 was observed with increase in the reaction temperature. These studies suggested that the regioselectivity of CYP119 provide the critical clue for the physiological enzyme function in this thermophilic archaebacteria. In addition, regioselectivity control of CYP119 without altering its thermostability can lead to the development of novel CYP119-based catalysts through protein engineering.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.2
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• pp.333-338
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• 2008

In this paper, a new NMOS current-mirror type bridge rectifier for driving RFID chips, whose minimum input voltage required to obtain the effective DC output voltage is low enough and whose power dissipation can be reduced than that of conventional one, is proposed. The designed rectifier is able to supply high enough and well-rectified DC voltages to drive RFID transponder chips for the frequency range of 13.56 MHz HF(for ISO 18000-3), 915 MHz UHF(fur ISO 18000-6), and 2.45 GHz microwave(for ISO 18000-4). Output characteristics of the proposed rectifier are analyzed with the high frequency equivalent circuit. And the circuitry method for effective reducing of the gate leakage current due to the increasing of operating frequency is also proposed theoretically. Using this method, the power consumption of $100\;{\mu}W$ and the DC output voltage of 2.13V for 3V peak-to-peak input voltage and $45\;K{\Omega}$ load resistance are obtained. Compared to conventional one, the proposed rectifier operates in more stable and shows superior characteristics in UHF and microwave frequencies.

• Journal of the Korean Ceramic Society
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• v.33 no.2
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• pp.149-154
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• 1996

ZnO and Al-doped ZnO thin films were prepared by sol-gel dip-coating method and electrical and optical properties of films were investigated. Using the zinc acetate dihydrate and acetylaceton(AcAc) as a chelating agent stable ZnO sol was synthesized with HCl catalyst. Adding aluminium chloride to the ZnO sol Al-doped ZnO sol could be also synthesized. As Al contents increase the crystallinity of ZnO thin film was retarded by increased compressive stress in the film resulted from the difference of ionic radius between Zn2+ and Al3+ The thickness of ZnO and Al-doped ZnO thin film was in the range of 2100~2350$\AA$. The resistivity of ZnO thin films was measured by Van der Pauw method. ZnO and Al-doped ZnO thin films with annealing temperature and Al content had the resistivity of 0.78~1.65$\Omega$cm and ZnO and Al-doped ZnO thin film post-annealed at 40$0^{\circ}C$ in vacuum(5$\times$10-5 torr) showed the resistivity of 2.28$\times$10-2$\Omega$cm. And the trans-mittance of ZnO and Al-doped ZnO thin film is in the range of 91-97% in visible range.

• Korean Journal of Materials Research
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• v.9 no.11
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• pp.1148-1152
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• 1999

An organometallic precursor, hfac(hexafluoroacetylacetonate) Cu(I) DMB (3,3-dimethyl- 1-butene) was synthesized, evaluated and compared with other precursors for metal organic chemical vapor deposition of copper thin films. It was found that at $40^{\circ}C$, the vapor pressure was an order of magnitude higher (about 3 torr) than (hfac) Cu vinyltrimethylsilane (VTMS) and films could be deposited at the substrate temperature of 100-$280^{\circ}C$ with deposition rate substantially higher. The copper films contained no detectable impurities as measured by Auger electron spectroscopy and had a resistivity of about 2.0$\mu\Omega$-cm in the deposition temperature range of 150 to $250^{\circ}C$. From the thermal analysis, (hfac)Cu(I)(DMB) is believed to be quite stable and no appreciable amount of precipitation was observed at $65^{\circ}C$ heating for more than a month.

• Journal of the Korean Electrochemical Society
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• v.3 no.4
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• pp.241-245
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• 2000

The objective of this work Is to design, fabricate, and characterize pseudo-capacitor using amorphous $MnO_2\;nH_2O$ electrode material. The cyclic voltammogram under 100mV/s scan rate of the material shows the electrochemically stable potential window of 1V and the specific capacitance of 250F/g. The TDMA pulse test result indicates that the TDMA system (2 parallel-pseudo-capacitor systems) has the ohmic voltage drop of 0.22V and the capacitor voltage drop of 0.38V. The total voltage drop of the TDMA system is 0.60V and less than 1V of which value is the maximum voltage drop requirement or the TDMA satellite phone. Also, the TDMA system had the ESR of $55m{\Omega}$ and the capacitance of 105mF. Therefore, it is confirmed that the TDMA system has the application feasibility as load-leveling capacitor for the satellite phone.