• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.195-196
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• 2009

각도에 따른 배면 유기 발광 소자의 발광 패턴에 대해서 연구하였다. 소자 내에서 발광한 빛은 등방성으로 퍼져 나가고 굴절률이 n인 매질과 공기의 계면에서 굴절하게 된다. 소자 내에서 굴절되어 퍼져 나온 빛의 각도에 따른 빛의 세기를 측정하였다. 또한 배면 유기 발광 소자에서의 시야각을 $10^{\circ},\;20^{\circ},\;30^{\circ},\;40^{\circ},\;50^{\circ},\;6^{\circ}$로 변화시켜 각도에 따른 발광 패턴을 알 수 있었다. 소자 내에서 발광한 빛이 소자 밖으로 퍼져 나올 때의 발광 패턴을 편광판을 이용하여 $0^{\circ}$와 $90^{\circ}$로 변화시켜 실험하였다. 소자의 구조는 ITO(170nm)/TPD(40nm)/$Alq_3$(60nm)/LiF(0.5nm)/Al(100nm)으로 하고, 유기물층과 음전극은 $2{\times}10^{-5}$Torr에서 증착하였다. 유기물의 증착 조건은 $2{\times}10^{-5}$torr의 진공도에서 $1.5{\sim}2.0{\AA}/s$ 속도로 열 증착하였다. 전극의 증착 조건은 $2{\times}10^{-5}$torr의 진공도에서 $1.5{\sim}2.0{\AA}/s$ 속도로 열 증착하였다. 발광 면적은 $3mm{\times}5mm$이다. 소자의 각도에 따른 발광 스펙트럼 측정은 USB-2000을 사용하였다. 소자 밖으로 나오는 편광되어진 빛을 측정하기 위하여 편광판을 사용하여 측정하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.168-169
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• 2009

본 연구에서는 ITO 표면 개질에 의한 유기 발광 소자의 특성 변화에 대해서 연구하였다. ITO 전극은 발광 소자의 투명 전극으로 널리 사용되고 있으며 이러한 발광 소자의 특성은 ITO의 표면 상태에 따라 민감하게 반응한다. ITO 표면 개질은 ITO와 유기물 사이의 쇼트기 장벽을 감소시키며, 전극과 유기물의 점착을 향상시켜 준다. 본 실험에서는 습식 처리 방식으로 self-assembled monolayer(SAM)을 사용하였다. 유기 발광 소자의 특성은 SAM 처리에 의해 향상 되었다. 유기 발광 소자는 ITO/SAM/TPD(50nm)/$Alq_3$(70nm)/LiF(0.5nm)/Al(100nm)의 구조로 제작하였으며, ITO의 표면 특성은 일반적인 특성 기술에 의해 연구되었다. SAM 처리된 소자는 SAM 처리하지 않은 소자에 비해 구동 전압, 발광 세기, 외부 양자 효율 등이 향상되었다. ITO의 SAM 처리 시간을 0/10/15/20/25분으로 하여 소자를 제작하였다. 15분간 SAM 처리한 소자는 SAM 처리하지 않은 소자에 비해 외부 양자 효율과 전류 효율이 2.6배 상승하였다. 본 실험을 통하여 ITO 표면 위에 SAM층을 삽입한 걸과, 구동 전압, 발광 세기, 효율 등이 향상됨을 알 수 있었다.

• Imaging Science in Dentistry
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• v.30 no.1
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• pp.11-15
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• 2000

Purpose: The primary objective of this study was to estimate the radiation absorbed doses in certain critical organs in the head and neck region with an Orthopos plus, a Panelipse, and a Panex-E machines. The second objective was to compare the absorbed doses between 5 inch by 12 inch and 6 inch by 12 inch image field for the Orthopos plus. Materials and Methods: Rando phantom and LiF TLD chips were used for dosimetry. The absorbed doses were measured at the thyroid gland, the submandibular gland, the parotid gland, the mouth floor, the maxillary sinus, the brain, the mandibular body, the mandibular ramus, the 2nd cervical spine and the skin over TMJ area. Results: The highest absorbed dose value was recorded at the mandibular ramus for the Orthopos plus with narrow image field. Higher absorbed dose values were recorded at the parotid gland, the mouth floor, the submandibular gland, and the 2nd cervical spine. The doses in the parotid gland were 597 μGy and 529 μGy with Orthopos plus, 638 μGy with Panelipse, and 1094μGy with Panex-E. Corresponding figures for the mandibular ramus were 2363 Gy and 1220 μGy, 248 μGy, and 118 μGy. The absorbed doses to the thyroid gland, the maxillary sinus, the brain, and the skin over TMJ were very low. Conclusion: Higher exposure values were recorded for the Orthopos plus than Panelipse and Panex-E. There was no significant differences of the absorbed doses according to the image field size.

• Transactions on Electrical and Electronic Materials
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• v.12 no.2
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• pp.80-83
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• 2011

We have fabricated phosphorescent white organic light-emitting devices (WOLEDs) with a spin-coated poly(Nvinylcarbazole) [PVK] host layer. Iridium(III) bis[(4,6-difluorophenyl)-pyridinato-N,$C^{2'}$]picolinate (FIrpic), tris(2-phenylpyridine)iridium(III) [$Ir(ppy)_3$], and tris(2-phenyl-1-quinoline)iridium(III) [$Ir(phq)_3$], were used as the blue, green, and red guest materials, respectively. The PVK was mixed with FIrpic, $Ir(ppy)_3$, and $Ir(phq)_3$ molecules in a chlorobenzene solution and spin-coated in order to prepare the emission layer; 3-(4-biphenylyl)-4-phenyl-5-(4-tertbutylphenyl)-1,2,4-triazole (TAZ) was used as an electron transport material. The resultant device structure was ITO/PVK:FIrpic:$Ir(ppy)_3:Ir(phq)_3$/TAZ/LiF/Al. The electroluminescence, efficiency, and electrical conduction characteristics of the WOLEDs based on the doped PVK host layer were investigated. The maximum current efficiency of the three wavelength WOLED with the doped PVK host was 19.2 cd/A.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.58 no.4
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• pp.615-618
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• 2009

In order to apply for transparent conductive oxide(TCO), we deposited ZnO thin film on the glass at room temperature by RF magnetron sputtering method. Deposition conditions for low resistivity were optimized in our previous studies. Under the deposition condition with the RF power of 800 [W]. Sheet resistance and surface roughness of ITO and ZnO thin film were measured by Hall-effect measurement system and AFM, respectively. The sheet resistance of ITO and ZnO thin film were 7.290 [$\Omega$] and 4.882 [$\Omega$], respectively. and surface roughness were 3.634 [nm] and 0.491 [nm], respectively. Green OLED was fabricated with the structure of TPD(400 [$\AA$])/Alq3(600 [$\AA$])/LiF(5 [$\AA$])/Al(1200 [$\AA$]). Turn-on voltage of green OLED applied ITO was 7 [V] and luminance was 7,371 [$cd/m^2$]. And, Turn-on voltage of green OLED applied ZnO was 14 [V] and luminance was 6,332 [$cd/m^2$].

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1103-1107
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• 2007

Highly efficient organic electroluminescent devices (OLEDs) based on 4,7- diphenyl-1, 10- phenanthroline (BPhen) as the electron transport layer (ETL), tris (8-hydroxyquinoline) aluminum ($Alq_3$) as the emission layer (EML) and N,$\acute{N}$-bis-[1-naphthy(-N,$\acute{N}$diphenyl-1,1´-biphenyl-4,4´-diamine)] (NPB) as the hole transport layer (HTL) were developed. The typical device structure was glass substrate/ ITO/ NPB/$Alq_3$/ BPhen/ LiF/ Al. Since BPhen possesses a considerable high electron mobility of $5\;{\times}\;10^{-4}\;cm^2\;V^{-1}\;s^{-1}$, devices with BPhen as ETL can realize an extremely high luminous efficiency. By optimizing the thickness of both HTL and ETL, we obtained a highly efficient OLED with a current efficiency of 6.80 cd/A and luminance of $1361\;cd/m^2$ at a current density of $20\;mA/cm^2$. This dramatic improvement in the current efficiency has been explained on the principle of charge balance.

• Journal of the Semiconductor & Display Technology
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• v.7 no.3
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• pp.5-9
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• 2008

New devices with structure of ITO/2TNATA/NPB/TCTA/CBP:7%Ir(ppy)$_3$/BCP/ETL/LiF/Al were proposed to develop high luminous green phosphorescent organic light emitting diodes and their electroluminescent properties were evaluated. The experimental devices were divided into two kinds according to the material ($Alq_3$ or SFC137) used as an electron transport layer (ETL). Luminous intensities of the devices using $Alq_3$ and SFC137 as electron transport layers were 27,500 cd/$m^2$ and 51,500 cd/$m^2$ at an applied voltage of 9V, respectively. The current efficiencies of both devices were similar as 12.6 cd/A under a luminance of 10,000 cd/$m^2$, while showed slower decay in the device with SFC137 as an ETL according to the further increase of luminance. Current density and luminance of the device with SFC137 as an electron transport layer were higher at the same voltage than those of the device with $Alq_3$ as an ETL.

• ETRI Journal
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• v.27 no.2
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• pp.181-187
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• 2005

Alkoxy-substituted poly(spirobifluorene)s and their copolymers with a triphenylamine derivative have been synthesized by Ni(0)-mediated polymerization. The polymers were well soluble in common organic solvents. Pure blue-light emissions without the long wavelength emission of poly(fluorene)s have been observed in the fluorescence spectra of polymer thin films. The light emitting diodes with a device configuration of ITO/PEDT:PSS(30 nm)/polymer(60 nm)/LiF(1 nm)/Al(100 nm) have been fabricated. The electroluminescence spectra showed the blue emissions without the long wavelength emission as observed in the fluorescence spectra. The relatively poor electroluminescence quantum yield of the homopolymer (0.017% @ 20 $mA/cm^{2}$) with color coordinates of (0.16, 0.07) has been improved by the introduction of triphenylamine moiety, and the copolymer with derivative exhibited an electroluminescence quantum yield of 0.15 % at 20 $mA/cm^{2}$ with color coordinates of (0.16, 0.08). Moreover, the introduction of polar side chains to the spirobifluorene moiety enhanced the device performance and led to the quantum yields of 0.6 to 0.7 % at 20 $mA/cm^{2}$, although there was some expense of color purities.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.994-997
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• 2006

We have fabricated white polymeric light-emitting devices (WPLEDs) from polyfluorene-based (PFO) blue and MEH-PPV polymer blending systems. A device structure of ITO / PEDOT:PSS / Blending polymer / Blue polymer / LiF / Al was employed. This structure of double emission layers results in the significant improvement of white color shift phenomenon. A current efficiency of 4.67 cd/A ($3,900cd/m^2$, 6.4V) and a brightness value of $17,600cd/m^2$ at 9.4 V with (0.34, 0.35) CIE coordinates at 5V and (0.29, 0.29) at 9V were obtained.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.984-987
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• 2003

The electrophosphorescent emission properties were investigated in polymer light-emitting diodes (PLEDs) based on a poly(9-vinylcarbazole) (PVK) doped with a green phosphorescent dye of fac-tris(2-phenylpyridine) iridium (III) [$Ir(ppy)_3$]. A green light peaked at 516 nm was emitted from devices with a configuration of ITO/PEDOT:PSS/PVK:$Ir(ppy)_{3}$/BCP/$Alq_{3}$/LiF/Al. The optimal doping concentration of $Ir(ppy)_{3}$ in PVK was found at 2% by weight, under which maximum current efficiency of 24.3 cd/A and peak external quantum efficiency of 6.8% were achieved at the high luminance of 4240 $cd/m^{2}$. The external quantum efficiency of 5% and current efficiency of 18 cd/A can be sustained even at the very high luminance of 35000 $cd/m^{2}$.