Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Highly Efficient Phosphorescent White Organic Light-Emitting Devices with a Poly(N-vinylcarbazole) Host Layer

  • Kang, Min-Ki (Department of Materials Engineering, Soonchunhyang University) ;
  • Moon, Dae-Gyu (Department of Materials Engineering, Soonchunhyang University)
  • Received : 2011.02.08
  • Accepted : 2011.03.10
  • Published : 2011.04.25
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Abstract

We have fabricated phosphorescent white organic light-emitting devices (WOLEDs) with a spin-coated poly(Nvinylcarbazole) [PVK] host layer. Iridium(III) bis[(4,6-difluorophenyl)-pyridinato-N,$C^{2'}$]picolinate (FIrpic), tris(2-phenylpyridine)iridium(III) [$Ir(ppy)_3$], and tris(2-phenyl-1-quinoline)iridium(III) [$Ir(phq)_3$], were used as the blue, green, and red guest materials, respectively. The PVK was mixed with FIrpic, $Ir(ppy)_3$, and $Ir(phq)_3$ molecules in a chlorobenzene solution and spin-coated in order to prepare the emission layer; 3-(4-biphenylyl)-4-phenyl-5-(4-tertbutylphenyl)-1,2,4-triazole (TAZ) was used as an electron transport material. The resultant device structure was ITO/PVK:FIrpic:$Ir(ppy)_3:Ir(phq)_3$/TAZ/LiF/Al. The electroluminescence, efficiency, and electrical conduction characteristics of the WOLEDs based on the doped PVK host layer were investigated. The maximum current efficiency of the three wavelength WOLED with the doped PVK host was 19.2 cd/A.

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References

  1. J. Kido, K. Hongawa, K. Okuyama, and K. Nagai, Appl. Phys. Lett. 64, 815 (1994) [DOI: 10.1063/1.111023].
  2. B. W. D'Andrade and S. R. Forrest, Adv. Mater. 16, 1585 (2004) [DOI: 10.1002/adma.200400684].
  3. V. Maiorano, E. Perrone, S. Carallo, A. Biasco, P. P. Pompa, R. Cingolani, A. Croce, R. I. R. Blyth, and J. Thompson, Synth. Met. 151, 147 (2005) [DOI: 10.1016/j.synthmet.2005.03.022].
  4. T. R. Hebner, C. C. Wu, D. Marcy, M. H. Lu, and J. C. Sturm, Appl. Phys. Lett. 72, 519 (1998) [DOI: 10.1063/1.120807].
  5. J. Kido, H. Shionoya, and K. Nagai, Appl. Phys. Lett. 67, 2281 (1995) [DOI: 10.1063/1.115126].
  6. Y. Kawamura, S. Yanagida, and S. R. Forrest, J. Appl. Phys. 92, 87 (2002) [DOI: 10.1063/1.1479751].
  7. J. Pina, J. Seixas de Melo, H. D. Burrows, A. P. Monkman, and S. Navaratnam, Chem. Phys. Lett. 400, 441 (2004) [DOI: 10.1016/j.cplett.2004.11.013].
  8. G. T. Lei, L. D. Wang, L. Duan, J. H. Wang, and Y. Qiu, Synth. Met. 144, 249 (2004) [DOI: 10.1016/j.synthmet.2004.03.010].
  9. M. A. Baldo, D. F. O'Brien, Y. You, A. Shoustikov, S. Sibley, M. E. Thompson, and S. R. Forrest, Nature 395, 151 (1998) [DOI: 10.1038/25954].
  10. B. W. D'Andrade, R. J. Holmes, and S. R. Forrest, Adv. Mater. 16, 624 (2004) [DOI: 10.1002/adma.200306670].
  11. H. B. Wu, J. H. Zou, F. Liu, L. Wang, A. Mikhailovsky, G. C. Bazan, W. Yang, and Y. Cao, Adv. Mater. 20, 696 (2008) [DOI: 10.1002/adma.200701329].
  12. K. Saito, N. Matsusue, H. Kanno, Y. Hamada, H. Takahashi, and T. Matsumura, Jpn. J. Appl. Phys. 43, 2733 (2004) [DOI: 10.1143/JJAP.43.2733].
  13. M. A. Baldo, S. Lamansky, P. E. Burrows, M. E. Thompson, and S. R. Forrest, Appl. Phys. Lett. 75, 4 (1999) [DOI: 10.1063/1.124258].
  14. C. Adachi, R. C. Kwong, P. Djurovich, V. Adamovich, M. A. Baldo, M. E. Thompson, and S. R. Forrest, Appl. Phys. Lett. 79, 2082 (2001) [DOI: 10.1063/1.1400076].
  15. A. Endo and C. Adachi, Chem. Phys. Lett. 483, 224 (2009) [DOI: 10.1016/j.cplett.2009.10.064].
  16. T. Tsuzuki and S. Tokito, Adv. Mater. 19, 276 (2007) [DOI: 10.1002/adma.200600845].
  17. Y. S. Seo and D. G. Moon, J. Phys. D: Appl. Phys. 43, 305101 (2010) [DOI: 10.1088/0022-3727/43/30/305101].
  18. H. Murata, C. D. Merritt, and Z. H. Kafafi, IEEE J. Sel. Top. Quant. Electron. 4, 119 (1998) [DOI: 10.1109/2944.669481].
  19. J. H. Jou, S. M. Shen, S. H. Chen, M. H. Wu, W. B. Wang, H. C. Wang, C. R. Lin, Y. C. Chou, P. H. Wu, and J. J. Shyue, Appl. Phys. Lett. 96, 143306 (2010) [DOI: 10.1063/1.3374326].
  20. Y. Xu, J. Peng, J. Jiang, W. Xu, W. Yang, and Y. Cao, Appl. Phys. Lett. 87, 193502 (2005) [DOI: 10.1063/1.2119407].
  21. V. Bulovic, A. Shoustikov, M. A. Baldo, E. Bose, V. G. Kozlov, M. E. Thompson, and S. R. Forrest, Chem. Phys. Lett. 287, 455 (1998) [DOI: 10.1016/s0009-2614(98)00168-7].
  22. S. Y. Kim, W. S. Jeon, T. J. Park, R. Pode, J. Jang, and J. H. Kwon, Appl. Phys. Lett. 94, 133303 (2009) [DOI: 10.1063/1.3114378].

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