• Title/Summary/Keyword: $^{16}N$

Search Result 8,472, Processing Time 0.043 seconds

Effects of N & P Treatment Based on Liquid Organic Materials for Capacitive Deionization(CDI) (축전식 탈염 공정의 액상 유기물에 따른 질소(N) 및 인(P) 처리 특성)

  • Lee, Bo-Ram;Jeong, In-Jo;Park, Soo-Gil
    • Journal of the Korean Electrochemical Society
    • /
    • v.16 no.3
    • /
    • pp.123-128
    • /
    • 2013
  • Organic carbons such as methanol, ethanol, iso-propanol, methoxy ethanol, glucose are added(1, 2, 3%) in the 2000 ppm $NH_3$ and $H_3PO_4$. As vol.%. cyclic voltammetry measurement of the capacity with the addition of organic carbon, the results of $NH_3$ + 3 vol.% Methanol Addition, $H_3PO_4$ + 2 vol.% iso-propanol addition of the increase in capacity was observed. Applying to the CDI Module cell with an addiction of organic carbon is confirm that remove $NH_4$-N and $PO_4$-P in sewage. Namely, the removal efficiency of $NH_3$ was increase of 16.4% during adsorption, 30.4% during desorption and the removal efficiency of $H_3PO_4$ was increase of 63% during adsorption, 54.7% during desorption. Therefore, the result of this research is confirm that effect of the N, P removal and considered that reduction of the operating costs without removing the organic matter in the influent wastewater.

Bacterial Infections after Liver Transplantation in Children: Single Center Study for 16 Years (16년간 단일기관에서 시행된 소아 간이식 후 세균 감염 합병증의 특징)

  • Kim, Jae Choon;Kim, Su Ji;Yun, Ki Wook;Choi, Eun Hwa;Yi, Nam Joon;Suh, Kyung Suk;Lee, Kwang-Woong;Lee, Hoan Jong
    • Pediatric Infection and Vaccine
    • /
    • v.25 no.2
    • /
    • pp.82-90
    • /
    • 2018
  • Purpose: Survival after liver transplantation (LT) has improved over the years, but infection is still a major complication. We aimed to identify the characteristics of bacterial infections in pediatric LT recipients. Methods: This study is a retrospective review of 189 consecutive children undergoing LT between 2000 and 2015 at a single center. In this study, the incidence of infection was determined for the following periods: within 1 month, between 1-5 months, and between 6-12 months. Patients who underwent liver transplants more than once or multiple organ transplants were excluded. Results: All patients had received postoperative antibiotic for 3 days. Only the maintenance immunosuppression with oral tacrolimus and steroids were performed. As a result, 132 bacterial infections developed in 87 (46.0%) patients (0.70 events per person-year). Bacterial infections occurred most frequently within the first month (n=84, 63.6%) after LT. In the pathogens, Staphylococcus aureus (15.2%), Enterococcus species (15.2%), and Klebsiella species (13.6%) were most common. Regarding the organ infected, bloodstream was most common (n=39, 29.5%), followed by peritoneum (n=28, 21.2%), urinary tract (n=25, 18.9%), and lungs (n=20, 15.2%). We changed prophylactic antibiotics from ampicillin-sulbactam to piperacillin-tazobactam at 2011, October, there were no significant effects in the prevalence of antibiotics resistant bacterial infections. The 1-year mortality was 9.0% (n=17), in which 41.2% (n=7) was attributable to bacterial infection; septicemia (n=4), pneumonia (n=2), and peritonitis (n=1). Conclusions: The incidence and type of bacterial infectious complications after LT in pediatric patients were similar to those of previous studies. Bacterial complications affecting mortality occur within 6 months after transplantation, so proper prophylaxis and treatment in this period may improve the prognosis of LT.

Chemical Analysis of Cuticular Hydrocarbons in Apis mellifera L. and Apis cerana F. (동양종과 서양종 꿀벌의 표피탄화수소 성분 분석)

  • 이창주;신경우;박승찬;심재한
    • Korean journal of applied entomology
    • /
    • v.42 no.1
    • /
    • pp.9-13
    • /
    • 2003
  • Cuticular hydrocarbons of antenna, legs and wings from two species of honeybee worker of Apis mellifera L. and Apis cerana F. can be analyzed directly with gas chromatograph and GC/MS without solvent extraction. The saturated hydrocarbons identified in selected part of both species were nC22, nC23, nC25-nC3O, nC32 and nC34 except nC24. Two saturated hydrocarbons, nC26 (23.0-42.6%) and nC28 (16.8-54.8%), were major compounds in both species and others were minor compounds. A. mellifera can be distinguished from A. cerana F. by having higher proportion of nC30, nC32 and nC34 by having lower proportion of nC25 from three selected part of both species.

Microstructure Control and Mechanical Properties of Continuously Porous SiC-Si3N4 Composites (연속다공질 SiC-Si3N4 복합체의 미세구조 및 기계적 특성)

  • Paul Rajat Kanti;Gain Asit Kumar;Lee Hee-Jung;Jang Hee-Dong;Lee Byong-Taek
    • Korean Journal of Materials Research
    • /
    • v.16 no.3
    • /
    • pp.188-192
    • /
    • 2006
  • The microstructures and mechanical properties of continuously porous $SiC-Si_3N_4$composites fabricated by multi-pass extrusion were investigated at different Si levels added. Si-powder with different weight percentages (0%, 5%, 10%, 15%, 20%) was added to the SiC powder to make the raw mixture powders, with $6wt%Y_2O_3-2wt%Al_2O_3$ as sintering additives, carbon ($10-15{\mu}m$) as a pore-forming agent, ethylene vinyl acetate as a binder and stearic acid ($CH_3(CH_2)_{16}COOH$) as a lubricant. In the continuously porous $SiC-Si_3N_4$ composites, $Si_3N_4$ whiskers like the hairs of nostrils were frequently observed on the wall of the pores. In this study, the morphology of the $Si_3N_4$ whiskers was investigated with the silicon addition content. In the composites containing of 10 wt% Si, a large number of $Si_3N_4$ whiskers was found at the continuous pore regions. In the sample to which 15 wt% Si powder was added, maximum values of about 101 MPa bending strength and 57.5% relative density were obtained.

Design of Normally-Off AlGaN Heterojunction Field Effect Transistor Based on Polarization Engineering (분극 엔지니어링을 통한 상시불통형 질화알루미늄갈륨 이종접합 전계효과 트랜지스터 설계)

  • Cha, Ho-Young;Sung, Hyuk-Kee
    • Journal of the Korea Institute of Information and Communication Engineering
    • /
    • v.16 no.12
    • /
    • pp.2741-2746
    • /
    • 2012
  • In this study, we propose a novel structure based on AlGaN substrate or buffer layer to implement a normally-off mode transistor that was difficult to be realized by conventional AlGaN/GaN heterojunction structures. The channel under the gate can be selectively depleted by growing an upper AlGaN barrier with a higher Al mole fraction and a top GaN charge elimination layer on AlGaN substrate or buffer layer. The proposed AlGaN heterojunction field effect transistor can achieve a threshold voltage of > 2 V, which is generally required in power device specification.

Pseudo Optical PAM-N Signal Using Externally Modulated Lasers

  • Huh, Joon Young;Lee, Joon Ki;Kang, Sae-Kyoung;Lee, Jyung Chan
    • ETRI Journal
    • /
    • v.37 no.6
    • /
    • pp.1120-1128
    • /
    • 2015
  • We propose a pseudo optical N-level pulse-amplitude modulation (PO PAM-N) signal using a few externally-modulated lasers (EMLs) operating at different wavelengths, which is suitable for upgrading the transmission speed over an optical link of < 10 km single-mode fiber with low-cost components. To compare a PO PAM-N signal with that of a standard optical PAM-N signal, we perform experiments for evaluating the performance of a 51.56-Gb/s PO PAM-4 signal and standard 51.56-Gb/s optical PAM-4 signal. The receiver sensitivity (at $BER=10^{-5}$) of the PO PAM-4 signal is 1.5 dB better than the receiver sensitivity of a standard optical PAM-4 signal. We also investigate the feasibility of PO PAM-N (N = 4, 8, and 16) signals operating at 103.12 Gb/s, considering relative intensity noise, timing jitter, extinction ratio (ER) of EMLs, and dispersion. From the results, a PO PAM-8 signal performs better than PO PAM-4 and PO PAM-16 signals at 103.12 Gb/s. Finally, we suggest a timing control method to suppress the effect of dispersion in a PO PAM-N signal. We show that the tolerance to dispersion of a 103.12-Gb/s PO PAM-8 signal can be improved to ${\pm}40ps/nm$ by applying a proposed scheme.

Angiotensin-converting enzyme gene insertion/deletion polymorphism is not associated with BMI in Korean adults

  • Kwon, Insu
    • Korean Journal of Exercise Nutrition
    • /
    • v.24 no.1
    • /
    • pp.24-28
    • /
    • 2020
  • [Purpose] Recent studies have demonstrated a probable association between ACE I/D polymorphism and obesity. Thus, this study aimed to investigate whether ACE I/D polymorphism influenced the susceptibly of developing obesity in Korean adults. [Methods] A total of 353 healthy Korean adults aged between 30 and 82 years were recruited, including 157 males and 196 females. Among the participants, 103 (29.2 %) were classified as normal (BMI < 23 kg/m2), 117 (33.1 %) as overweight (23 kg/m2 ≤ BMI < 25 kg/m2), and 133 (37.7 %) as obese (BMI ≥ 25 kg/m2). ACE polymorphism (rs1799752) analysis was performed using the MGB TaqMan® SNP Genotyping assay with 3 types of primers and 2 types of probes. The distributions of the ACE genotypes and allele frequencies were analyzed among the three groups using the Hardy-Weinberg equilibrium, chi-square tests, and multiple regression analysis. [Results] The distribution of the ACE genotypes were as follows: normal [II: n=38 (36.9 %), ID: n=46 (36.8 %), DD: n=19 (18.4 %)], overweight [II: n=43 (36.8 %), ID: n=55 (47.0 %), DD: n=19 (16.2 %)], and obese [II: n=41 (30.8 %), ID: n=76 (57.0 %), DD: n=16 (12.0 %)]. Unexpectedly, the I allele, rather than the D allele, was common in the obese group. [Conclusion] ACE I/D polymorphism is not associated with BMI in Korean adults. Thus, it is unlikely to be a powerful candidate gene for obesity in Korean adults.

Analysis of Positive Bias Temperature Instability Degradation Mechanism in n+ and p+ poly-Si Gates of High-Voltage SiO2 Dielectric nMOSFETs (고전압 SiO2 절연층 nMOSFET n+ 및 p+ poly Si 게이트에서의 Positive Bias Temperature Instability 열화 메커니즘 분석)

  • Yeohyeok Yun
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
    • /
    • v.16 no.4
    • /
    • pp.180-186
    • /
    • 2023
  • Positive bias temperature instability (PBTI) degradation of n+ and p+ poly-Si gate high-voltage(HV) SiO2 dielectric nMOSFETs was investigated. Unlike the expectation that degradation of n+/nMOSFET will be greater than p+/nMOSFET owing to the oxide electric field caused by the gate material difference, the magnitude of the PBTI degradation was greater for the p+/nMOSFET than for the n+/nMOSFET. To analyze the cause, the interface state and oxide charge were extracted for each case, respectively. Also, the carrier injection and trapping mechanism were analyzed using the carrier separation method. As a result, it has been verified that hole injection and trapping by the p+ poly-Si gate accelerates the degradation of p+/nMOSFET. The carrier injection and trapping processes of the n+ and p+ poly-Si gate high-voltage nMOSFETs in PBTI are detailed in this paper.