• Journal of The Korean Society of Grassland and Forage Science
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• v.23 no.4
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• pp.237-246
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• 2003

This pot experiment was conducted in order to find out the effects of application of combined micronutrients(T$_1$: control. T$_2$; Fe, T$_3$; Fe+Mn, T$_4$； Fe＋Mn＋Cu, T$_{5}$; Fe+Mn+Cu＋Zn, T$_{6}$；Fe+Mn+Cu＋Zn+Mo, T$_{7}$； Fe+Mn+Cu+Zn+Mo+B) on forage performance of pure and mixed cultures of orchardgrass and white clover The 2nd part was concerned with the changes in the forage yields and concurrence index. The results obtained are summarized as follows: 1. The effects of combined micronutrient applications on the forage yields were different according to the forage species, whether it was a pure or mixed cultures, and additional fertilization(especially N). The effects of them on the forage productivity and botanical composition were more obvious in white clover, especially in mixed culture, than in orchardgrass. By the significant role of B as a regulator, the yields of both forages were best in the T$_{7}$, respectively. 2. In the pure culture, the high yields of both forages were obtained by the T$_{7}$ and T$_2$, whereas the T$_{6}$ and T$_3$resulted in the low yields. The best yields of both forages were obtained by the T$_{7}$ with relatively optimum ratios among the micronutrients as follows; Fe/Mn/Cu/Zn, Fe/Mo, Mo/B, and ∑ cation/∑anion. It was observed the multiple interaction of Fe${\times}$Mn${\times}$Mo${\times}$B, and the significant role of B as a regulator. The effects of them on white clover were more distinct at no additional fertilization than at the additional fertilization(especially N). 3. In mixed culture, the optimum applications of them resulted in the positive increase of yield and botanical composition of white clover, whereas orchardgrass tended to be inversely except the T$_{7}$.X> 7/. 7/.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.2
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• pp.112-115
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• 1999

The real ($\varepsilon$1) and imaginary ($\varepsilon$2) parts of the dielectric function of ZnS have been measured by spectroscopic ellipsometry (SE) in the 3.7-6.0 eV photon-energy range at room temperature. The obtained dielectric function spectra reveal distinct structures at energies E0/(E0+$\Delta$0) and E1 critical points. The spectrum after chemical treatment to remove surface oxide overlayer showed that these data seem to be the best representation of the dielectric function of ZnS, having the largest $\varepsilon$2 value at E1 peak region reported so far by SE. Dielectric-related optical constants of ZnS, such as the complex refractive indices (n+n=ik), absorption coefficient, and reflectance, are also presented.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.35-38
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• 2002

In this paper, for digital x-ray conversion receptor development studied by hybrid technology of based on CdZnTe. For this study, First searched fabricate method of CdZnTe x-ray receptor. Second, search the phosphor material & fabricate method for scintillator layer. Fabricated sample is analyzed with physical & electric measurement. This result is showed good SNR ratio hybrid thechnology with direct method & indirect method. In this paper offer the method can reduce the dark-current in the hybrid X-ray detector.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1519-1521
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• 1998

A Gapless HST(high speed train) arrester design is not possible without the highly non-linear ZnO(ZincOxide) varistors. Zno varistors combine excellent protective characteristics with steady state performance to maximize protection, the ZnO varistors are selected for each unit based on leakage current and residual voltage, to verify that the residual voltage is the residual voltage published for HST arrester.

• Journal of Sensor Science and Technology
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• v.16 no.6
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• pp.419-427
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• 2007

Single crystal $ZnIn_{2}S_{4}$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $450^{\circ}C$ with the hot wall epitaxy (HWE) system by evaporating the polycrystal source of $ZnIn_{2}S_{4}$ at $610^{\circ}C$ prepared from horizontal electric furnace. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $ZnIn_{2}S_{4}$ thin films measured with Hall effect by van der Pauw method are $8.51{\times}10^{17}\;electron/cm^{-3}$, $291{\;}cm^{2}/v-s$ at 293 K, respectively. The photocurrent and the absorption spectra of $ZnIn_{2}S_{4}$/SI(Semi-Insulated) GaAs(100) are measured ranging from 293 K to 10 K. The temperature dependence of the energy band gap of the $ZnIn_{2}S_{4}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)$=2.9514 eV. ($7.24{\times}10^{-4}\;eV/K$)$T^{2}$/(T+489 K). Using the photocurrent spectra and the Hopfield quasicubic model, the crystal field energy(${\Delta}cr$) and the spin-orbit splitting energy(${\Delta}so$) for the valence band of the $ZnIn_{2}S_{4}$ have been estimated to be 167.8 meV and 14.8 meV at 10 K, respectively. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1}$-, $B_{1}$-, and $C_{41}$-exciton peaks.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.953-956
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• 2003

Transparent conductive ZnO:Ga thin films were deposited on glass substrates using rf magnetron sputtering method for flat panel display. The ZnO:Ga films were preferentially oriented to c-axis (002) of on substrates. The surface morphology was smooth and had not porous whatever substrate temperature was. The electrical conductivity of the thin films were in the range of $1.6{\times}10^2{\sim}6.7{\times}10^3\;{\Omega}^{-1}cm^{-1}$ at the growth temperature from 50 to $400^{\circ}C$, whereas has a maximum at around $250^{\circ}C$. By combining of XRD and EXAFS, the crystallinity and grain size decreased with increasing substrate temperature corresponding to the reduction of the grain-boundary scattering. The optical transmittance of sputtered ZnO:Ga thin films had an improved about 86% in the UV-visible region.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.97-98
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• 2008

n-ZnO/p-Si heterostructure is a good candidate for ZnO-based heterojunction light emitting diodes(LED) because of its competitive price and lower driving voltage. However, the conventional LED shows much lower extraction efficiency, because it has small top contact and large backside contact. In this structure, the injected current from the top contact enters the active region underneath the top contact. Thus, the emitted light is hindered by the opaque top contact. This problem can be solved by using a current-blocking layer(CBL) that prevents the current injection into the active region below the top contact.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.141-144
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• 2003

This study proposes ZnO thin film as a piezoelectric material for SAW (surface acoustic wave) filter. The ZnO thin film with thickness $2.6{\mu}m$ was deposited (0001)-oriented sapphire by RF magnetron sputtering technique. IDTs (inter-digital transducers) electrodes were patterned upon SAW filter mask with solid finger structure unapodized using lift-off method on ZnO piezoelectric thin film. SAW propagation velocity was measured with the center frequency by HP 8753C network analyzer. A fabricated ZnO SAW filter exhibited a high propagation velocity of 5433 $^m/s$ and relatively insertion loss of -53.391dB at $\lambda=80{\mu}m$. The side-lobe attenuation of the center frequency was about 17dB. When the wavelength was $80{\mu}m$ $(\lambda/4=20{\mu}m)$, the center frequency was 67.907 MHz. $k^2$ (electromechanical coupling coefficient) was 15.84 %.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.421-426
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• 1995

The magnetic properties of the hot-pressed magnets made from the Fe-Nd-B alloys, mechanically ground and subsequently blended with binary additives such as Al-Cu and Ag-Zn before hot pressing, were investigated. The coercivities of the magnets increased as the concentration of Al-Cu increased up to 1 wt.% or up to 3 wt.% in the case of Ag-Zn. At higher concentrations the coercivities decreased markedly. The maximum gain in coercivity by the addition was about 20 %. typical values of $_{i}H_{c}$ and $B_{r}$ of a hotpressed magnet containing 1 wt.% Al-Cu were 18 kOe and 7 kG, respectively. It was found that Cu, Ag, and Zn, which diffused into the magnet during hot pressing, were mostly concentrated on the Nd-rich grain boundary phase whereas Al was present not only in the grain boundary region but also in the matrix grains.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2009.10a
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• pp.387-390
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• 2009

This study was designed to fabricate the micro-electro-mechanical systems (MEMS) parts such as micro spur gears using hot extrusion of gas atomized Al-78Zn powders. For this purpose, it is important to develop new methods to fabricate micro-dies and choose suitable extrusion conditions for a micro-forming. Micro-dies with Ni were fabricated by LIGA technology. LIGA technology was capable to produce micro-extrusion dies with close tolerances, thick bearing length and adequate surface quality. Superplastic Al-78Zn powders have the great advantage in achieving deformation under low stresses and exhibiting good micro formability with average strain rates ranging from $10^{-3}$ to $10^{-2}\;s^{-1}$ and constant temperatures ranging from 503 to 563K. Al-78Zn powders were compacted into a cylindrical shape (${\Phi}3{\times}h10$) under compressive force of 10kN and, subsequently, the compacted powders were extruded at 563k in a hot furnace. Micro-extrusion has succeeded in forming micro-gear shafts.