• Journal of the Korean Magnetic Resonance Society
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• v.24 no.1
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• pp.16-22
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• 2020

Based on quantum transport theory, we investigated theoretically the magnetic field dependence of the quantum optical transition of quasi 2-dimensional Landau splitting system, in CdS and ZnO Through the analysis of the current work, we found the increasing properties of the cyclotron resonance line-profiles (CRLPs) which show the absorption power and the cyclotron resonance line-widths (CRLWs) with the magnetic field in CdS and ZnO We also found that that CRLWs, γ_total(B) of CdS < γ_total(B) of ZnO in the magnetic field region B < 15 Tesla.

• Journal of the Korean Magnetics Society
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• v.18 no.1
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• pp.39-42
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• 2008

[ $AB_2X_4$ ](A, B=Transition Metal, X=O, S, Se) are cubic spinel normal ferrimagnets, in which M ions occupy the tetrahedral sites and Cr ions occupy the octahedral sites. Recently, they have been investigated for behaviour of B site ions and A-B interaction. Polycrystalline $[Co_{0.9}Zn_{0.1}]_A[Cr_{1.98}{^{57}Fe_{0.02}}]_BO_4$ compound was prepared by wet-chemical process. The ferrimagnetic transition was observed around 90K. $M\"{o}ssbauer$ absorption spectra at 4.2K show that the well-developed two sextets are superposed with small difference in hyperfine fields($H_{hf}$). The hyperfine fields of $CoCr_{1.98}{^{57}Fe_{0.02}}O_4$ and $Co_{0.9}Zn_{0.1}Cr_{1.98}{^{57}Fe_{0.02}}O_4$ were determined to be 488, 478 kOe and 486, 468 kOe, respectively. We notice that the one of the magnetic hyperfine field values changes with Zn ion substitution. These results suggest the incommensurate states and spin-reorientation temperature($T_S=18K$) changes with Zn ions substitution below spin-reorientation temperature($T_S=28K$) of $CoCr_{1.98}{^{57}Fe_{0.02}}O_4$

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.272-273
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• 2006

LTCC(low temperature co-fired ceramics)용 glass/ceramic 복합체를 제조하기 위해 4 종류의 borosilicate계 glass를 선정하고 filler로 $Al_2O_3$ ceramics를 filler 사용하여 30~50 vol% glass frit에 따른 소결 및 유전 특성에 대하여 조사하였다. Glass frit은 $SiO_2$와 $B_2O_3$ 함량비를 고정한 후 R(CaO, BaO, ZnO, $Bi_2O_3$)에 따라 유리 연화온도(Ts)와 함량이 소결에 미치는 영향 및 유전 특성 변화를 고찰한 결과, CaO-$B_2O_3-SiO_2$ glass의 경우 다량의 2 차상이 형성되었고, 이에 $900^{\circ}C$ 이하에서 완전 소결이 이루어지지 않았으며, BaO-$B_2O_3-SiO_2$ glass는 celsian($BaAl_2Si_2O_8$) 결정이 형성되면서 소결성의 저하를 갖고 왔으며, ZnO-$B_2O_3-SiO_2$ glass는 소결이 진행됨에 따라 주상이 $Al_2O_3$에서 gahnite($ZnAl_2O_4$) 결정이 형성되면서 품질계수가 크게 증가하였으며, $Bi_2O_3-B_2O_3-SiO_2$ glass는 45 vol%일 때 $900^{\circ}C$에서부터 일정한 선수축율 특성을 나타내었지만, 다량의 액상으로 인하여 유전 특성의 저하를 나타내었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1106-1110
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• 2003

The electrical characteristics of $A{\sim}C's$ ZnO varistors fabricated according to variable sintering condition, which sintering temperature is $l130^{\circ}C$ and speeds of pusher are A: 2mm/min, B: 4mm/min, C: 6 mm/min, respectively, were investigated. The varistor voltage of $A{\sim}C's$ ZnO varistors sintered at $1130^{\circ}C$ increased in order A < B $A{\sim}C's$ ZnO varistors exhibited below 2mA at rated voltage. Lightning impulse residual voltage of A's ZnO varistor suited standard characteristics, which is 3.85kV at 2.5kA, 4.4kV at 5kA and 5.16kV at 10kA. After multi lightning impulse residual voltage test of A's ZnO varistor exhibited good discharge characteristics which ZnO varistor reveals no evidence of puncture, flashover, cracking in visual examination. After high current impulse test of A's ZnO varistor exhibited good discharge characteristics, which variation rate of residual voltage is 0.4% before and after test, and revealed no evidence.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.04a
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• pp.24-25
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• 2002

No Abstract, See Full Text

• Korean Journal of Materials Research
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• v.5 no.5
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• pp.568-574
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• 1995

We investigated the effects of B-doping on the growth mechanism of ZnO films. The B-doped ZnO films, which were widely applied for transparent conducting electrode, were deposited by plasma enhanced chemcial vapor depostion(PECVD) using diethylzinc(DEZ), No.sub 2/. and B$_{2}$H$_{6}$. The deposition conditions were a sbustrate temperature of 30$0^{\circ}C$, an rf power of 200, and a chamber pressure of 1 torr. At the given depostion condition, the growth rate of B-doped ZnO thin films was higher than that of undoped ones, but didn't change even with further increasing B$_{2}$H$_{6}$ flow rate and the interplanar distance between(0002) planes was reduced as B atoms substituted Zn sites.s.

• Proceedings of the Korean Institute of Resources Recycling Conference
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• 2004.12a
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• pp.3-11
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• 2004

The power loss analysis was carried out for Ni-Cu-Zn ferrite samples with different content of NiO and ZnO. The power loss, Pcv decreases monotonically wi increasing temperature and attains to a certain value at around $100\~120$ degrees Celsius. The frequency dependence of Pcv can be explained by $Pcv\~f^n$', and n is independent of the frequency, f up to 1MHz. The Pcv decreases with an increase in ZnO/NiO. The Pcv was separated to hysteresis loss, Ph and residual loss, (Pcv-Ph). The temperature characteristics and compositional dependence of Pcv can be attributed to the Ph, while (Pcv-Ph) is not affected by both temperature and ZnO/NiO. By analyzing temperature and composition dependence of Ph and initial permeability, ${\mu}^i$ following equations could be formularized. $${\mu}_i{\mu}o=I_x\;^2/(K_1+bs_ol_s)\;\;\;\;(1)$$ $Wh=13.5(I_s\;^2/{\mu}_i{\mu}_o)\;\;\;\;(2)$$ Were ${\mu}_o$ is permeability of vacuum, $I_s$ saturation magnetization, $K_1$ anisotropy constant, $S_o$ internal heterogeneous stress, $I_s$, magnetostriction constant, b unknown constant. Wh hysteresis loss per one cycle of excitation (Ph: Wh*f). Steinmetz constant of Ni-Cu-Zn ferrites, $m=1.64\~2.2$ is smaller than the one of Mn-Zn ferrites, which suggests the difference of loss mechanism between these materials.

• Journal of The Korean Society of Grassland and Forage Science
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• v.23 no.3
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• pp.179-186
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• 2003

This pot experiment was conducted to find out the effects of boron application( $B_{0}$ ) ; control, B$_1$; 0.2, $B_2$; 2.0, $B_3$; 6.0, $B_4$; 15.0 boron me/pot) on the forage performance of pure and mixed cultures of orchardgrass and white clover. The fourth part was concerned with the changes in the contents of B, Fe, Mn, Cu, and Zn in forages. The results obtained are summarized as follows: 1. The boron(B) contents of both forages and their differences among the B treatments generally decreased according to the cutting order. The B contents of white clover were somewhat lower in the $B_{0}$ than in the $B_2$. However, the differences in the yields between $B_{0}$ and $B_2$ were relatively great. It was probably caused by the latent B-deficiency in the $B_{0}$. Compared with white clover, the B contents of orchardgrass had relatively great differences between the $B_{0}$ and B$_2$, but both yields tended to be similar. 2. The contents of Fe, Mn, Cu, and Zn in both forages were generally different according to the forage species, whether it was a pure or mixed cultures, and additional fertilization. The effects of B application on their contents were different according to the micronutrients and above factors. 3. The Fe contents of white clover were lower in the $B_{0}$ and $B_4$ than in the$ B_2$. It tended to be related to the weak growth of roots and low yields in the $B_{0}$ and $B_2$. However, there were not consistent in the changes of contents of Mn, Cu, and Zn by the rates of B application. 4. The effects of B application on the total ion concentrations of Fe, Mn, Cu, and Zn were not consistent in both forages. However, the concentrations were generally affected by the changes in the contents of Mn and Zn. The concentrations of white clover were higher in a pure than in mixed culture.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.121-124
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• 1998

Generally the structure of powder electroluminescent devices (PELDs) on ITO-film was makeup of the ZnS:Cu phosphor layer and BaTiO$_3$ insulating layer. The active layer, which consists of a suitably doped ZnS powder mixed in a dielectric, is sandwiched between two electrodes; one of which are ITO film and the other is aluminum. In this paper, three kinds of powder eleotroluminescent devices (PELDs) : WK-A(ITO/BaTiO$_3$/ZnS:Cu/Silver paste). WK-B(ITO/BaTiO$_3$+ZnS:Cu/Silver paste) and WK-C(ITO/BaTiO$_3$/ZnS:Cu/BaTiO$_3$/Silver paste), fabricated by spin coating method, were investigated. To evaluate the luminescence properties of three kinds of PELDs, EL emission spectroscopy, transferred charge density and time response of EL emission intensity under square wave voltage driving were measured.

• Korean Journal of Materials Research
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• v.4 no.8
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• pp.847-854
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• 1994

An amorphous single phase and coexistent amorphous and hcp-Mg phases in Mg-Zn-Ce system were found to form in the composition ranges of 20 to 40% Zn, 0 to 10% Ce and 5 to 20% Zn, 0 to 5% Ce, respectively. A $Mg_{85}Zn_{12}Ce_{3}$ amorphous alloy containing nanoscale hcp-Mg particles was found to form either by melt spinning or by heat treatment of melt -spun ribbon. The particle size of the hcp-Mg phase can be controlled in the range of 4 to 20 nm. The mixed phase alloy prepared thus has a good bending ductility and exhibits high ultimate tensile strength($\sigma_{B}$) ranging from 670 to 930 MPa and fracture elongation($\varepsilon_{f}$) of 5.2 to 2.0%. The highest specific strength($\sigma_{B}$/density =$\sigma_{s}$)$3.6 \times 10^5N \cdot m/kg$. It should be noted that the highest values of flB, US and ？1 are considerably higher than those (690MPa,$2.5 \times 10^5N \cdot m/kg$and 2.5%) for amorphous Mg-Zn-Ce alloys. The increase of the mechanical strengths by the formation of the mixed phase structure is presumably due to a dispersion hardening of the hcp supersaturated solution which has the hardness higher than that of the amorphous phase with the same composition.