• Analytical Science and Technology
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• v.11 no.2
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• pp.79-87
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• 1998

Consumers have recently preferred to purchase extensive UV intercepting products, which are waterproof and free from side effects on skin. During the testing of cytotoxicity (in-vitro) in neutral red (NR) method, cell survival ratio of UV-B interceptors decreased to just above 0.08 w/v%, and it was observed that the UV-A interceptors the ratio also decreased to just above 0.06 w/v%. In addition patch-tests of inorganic UV interceptors resulted in no skin irritation even below 10.0 and 11.25. In absorption curves, UV-B was most suitable for octyl methoxycinnamate (OMC) and UV-A for butyl methoxy dibenzoylmethane (BMDM). For this reason, $Nylonpoly^{TM}$ UVA/UVB the material of OMC and BMDM coated with Nylon & polyethylene, was used as the organic UV interceptor. Zinc oxide (ZnO) and titanium dioxide ($TiO_2$) was used as inorganic UV interceptors. The appropriate mixture ratio of ZnO and $TiO_2$ was 6 to 4:6% of ZnO, 4% of $TiO_2$ and 5% of $Nylonpoly^{TM}$ UVA/UVB were all combined and added to our sunscreen cream. The SPF value of in-vitro was 38.9. In practical application, each sun protection factor (SPF) duration of oil-in-water (O/W) emulsion and water-in-silicone (W/S) emulsion containing sunscreen cream of the same content showed that W/S type of sunscreen cream was 5 times as durable as the other. Therefore, this product is fit for use in swimming, climbing or skiing. This research is to minimize skin trouble caused by UV interceptors and to make one with proper softness, skin safety and UV intercepting efficiency.

• Journal of information and communication convergence engineering
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• v.4 no.3
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• pp.111-113
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• 2006

A new thin film deposition technique of piezoelectric ZnO film and its successful application for film bulk: acoustic resonator (FBAR) devices are presented. The two-step deposition used seems to be able to deposit ZnO film with a highly preferred orientation. The FBAR devices with the ZnO films show an excellent return loss of $35{\sim}50$ dB at $1.5{\sim}2$ GHz.

• Journal of the Korean Magnetics Society
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• v.18 no.3
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• pp.120-125
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• 2008

In this study, NiCoZn ferrites with the variation of sintering temperature and chemical composition were prepared by the coprecipitation. Microstructures Crystal structure of NiCoZn ferrites were analyzed by XRD and their electric magnetic characteristics were analyzed by LCR meter and their morphology observed by SEM. We identified that these powders have a typical NiCoZn spinel structure and nanoparticles average size of 40 nm. The impurity, the initial permeability and the Q factor value are the lowest of sintered NiCoZn ferrite at $1250^{\circ}C$. Also, we measured S-parameter for $(Ni_{0.4}Co_{0.1}Zn_{0.5})Fe_2O_4$ which showed a maximum reflection loss of -3.1 dB at 6 GHz for the 2 mm thick sample. From this result, we found that the NiCoZn ferrite can be used in ferrite microwave-absorbing application at a higher frequency region (> 6 GHz).

• Proceedings of the KIEE Conference
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• 2003.11a
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• pp.174-177
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• 2003

Kinds of most frequent faults happened on overhead distribution system are the single line-to-ground fault, the line-to-line fault and the two line-to-ground fault. Occasionally, the three line-to-ground fault and the disconnection of a wire are happened in severe conditions. In this study, the single line-to-ground fault, the line-to-line fault, two line-to-ground fault on three-phase four-wire overhead distribution system were experimentally simulated and characteristics of total leakage current of distribution arrester caused by these faults were investigated. Also, the changing aspect of total leakage current of distribution arrester caused by voltage variation was investigated. In a consequence, abnormal voltages caused by voltage variation, the line-to-line fault, the two line-to-ground fault have a little effect on total leakage current of ZnO arrester. But abnormal voltages caused by the single line-to-ground fault have an important effect on total leakage current of ZnO arrester.

• Bulletin of the Korean Chemical Society
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• v.31 no.8
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• pp.2185-2189
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• 2010

Closely arranged CdSe and Zn doped CdSe vertical nanorod bundles were grown directly on FTO coated glass by using electrodeposition method. Structural analysis by XRD showed the hexagonal phase without any precipitates related to Zn. FE-SEM image showed end capped vertically aligned nanorods arranged closely. From the UV-vis transmittance spectra, band gap energy was found to vary between 1.94 and 1.98 eV due to the incorporation of Zn. Solar cell parameters were obtained by assembling photoelectrochemical cells using CdSe and CdSe:Zn photoanodes, Pt cathode and polysulfide (1M $Na_2S$ + 1M S + 1M NaOH) electrolyte. The efficiency was found to increase from 0.16 to 0.22 upon Zn doping. Electrochemical impedance spectra (EIS) indicate that the charge-transfer resistance on the FTO/CdSe/polysulfide interface was greater than on FTO/CdSe:Zn/polysulfide. Cyclic voltammetry results also indicate that the FTO/CdSe:Zn/polysulfide showed higher activity towards polysulfide redox reaction than that of FTO/CdSe/polysulfide.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1347_1348
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• 2009

We fabricated FEDs based on ZnO nanowires. ZnO nanowires were synthesized on Au thin films by hydrothermal method on hot plate. After 2 hours, we obtained nanowires of chin form. The high-purity nanowires showed sharp tips geometry with a wurtzite structure. The field emission properties of the ZnO nanowires were investigated in high vacuum chamber. The turn-on field for the ZnO nanowires was found to be about 4.1 V/${\mu}m$ at a current density of $0.1{\mu}A/cm^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.396-399
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• 2003

In this paper, the purpose is to develop imaging technique of synchrotron radiation using CMOS image sensor. The detector using hybrid method to be research in this lab was used, in order to increase image signal. We made experiments with 1B2 Whitebeam/microprobe beamline in PAL (Pohang Accelerator Laboratory). Phosphor materials such as ZnS:(Ag,Li), ZnS:(Cu,Al), $Y_2O_2S:Eu$ were produced by spin coating on glass. Synchrotron radiation images were acquired and evaluated from monochromatic light from monochromoator in PAL 1B2line. From obtained object and phantom, MTF was 0.15 in ZnS:(Ag,Li) phosphor, and 0.178 in ZnS:( Cu,Al) at 151p/mm. MTFs were unsystematic because thickness of phosphor and uniformity of surface were not optimized. It's expected to improve MTF and the qualify of images as uniformity's optimized.

• Current Photovoltaic Research
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• v.10 no.2
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• pp.39-48
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• 2022

A Se-containing Cu/SnSe₂/ZnSe precursor was employed to introduce S to the precursor to form Cu₂ZnSn(S,Se)₄ (CZTSSe) film. The morphology of CZTSSe films strongly varied with two different pre-annealing environments: S and N₂. The CZTSSe film with S pre-annealing showed a dense morphology with a smooth surface, while that with N₂ pre-annealing showed a porous film with a plate-shaped grains on the surface. CuS and Cu₂Sn(S,Se)₃ phases formed during the S pre-annealing stage, while SnSe and Cu₂SnSe₃ phases formed during the N₂ pre-annealing stage. The SnSe phase formed during N₂ pre-annealing generated SnS₂ phase that had plate shape and severely aggravated the morphology of CZTSSe film. The power conversion efficiency of the CZTSSe solar cell with S pre-annealing was low (1.9%) due to existence of Zn(S.Se) layer between CZTSSe and Mo substrate. The results indicated that S pre-annealing of the precursor was a promising method to achieve a good morphology for large area application.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.414-414
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• 2008

Vertically well-aligned Ga-doped ZnO nanorods with different Ga contents were grown by thermal evaporation on a ZnO template. The Ga-doped ZnO nanorods synthesized with 50 wt % Ga with respect to the Zn content showed maximum compressive stress relative to the ZnO template, which led to a rapid growth rate along the c-axis due to the rapid release of stored strain energy. A further increase in the Ga content improved the conductivity of the nanorods due to the substitutional incorporation of Ga atoms in the Zn sites based on a decrease in lattice spacing. The p-n diode structure with Ga-doped ZnO nanorods, as a n-type, displayed a distinct white light luminescence from the side-view of the device, showing weak ultraviolet and various deep-level emissions.

• Proceedings of the Korean Vacuum Society Conference
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• 2006.08a
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• pp.194-194
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• 2006