• 한국세라믹학회지
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• 제34권5호
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• pp.483-490
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• 1997

Al2O3/metal composites were fabricated by oxidation and reaction of molten Al-alloy into two types of commercial Al2O3-SiO2 fibrous insulation board. The growth rate, composition and microstructure of these materials were described. An AlZnMg(7075) alloy was selected as a parent alloy. Mixed polycrystalline fiber and glass phase fiber were used as a filler. The growth surface of an alloy was covered with and without SiO2. SiO2 powder was employed as a surface dopant to aid initial oxidation of Al-alloy. Al-alloy, SiO2, fiber block and growth inhibitor CaSiO3 were packed sequentially in a alumina crucible and oxidized in air at temperature range 90$0^{\circ}C$ to 120$0^{\circ}C$. The growth rate of composite layer was calculated by measuring the mass increasement(g) per unit surface($\textrm{cm}^2$). XRD and optical microscope were used to investigate the composition and phase of composites. The composite grown at 120$0^{\circ}C$ and with SiO2 dopant showed rapid growth rate. The growth behavior differed a little depending on the types of fiber used. The composites consist of $\alpha$-Al2O3, Al, Si and pore. The composite grown at 100$0^{\circ}C$ exhibited better microstructure compared to that grown at 120$0^{\circ}C$.

• 마이크로전자및패키징학회지
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• 제7권3호
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• pp.7-11
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• 2000

공침법을 이용하여 제조한 $SrTiO_3$분말에 $CuO-SiO_2$첨가물을 혼합하여 저전압구동형 SrTiO$_3$세라믹 바리스터 소자를 제조하였다. $CuO-SiO_2$첨가물을 이용한 $SrTiO_3$세라믹 바리스터제조 공정은 복잡한 공정을 단순화시킬 수 있을 뿐만 아니라, 일반적인 소결온도보다 100~$150^{\circ}C$ 낮은 온도에서도 소결이 되었다. 이 바리스터의 비직선계수($\alpha$) 값은 첨가물 5 wt% 혼합하여 $1350^{\circ}C$에서 하소한 시편에서 8.47의 최고값을 나타냈으며, 이때의 구동전압은 7 V 이하로 낮은 구동전압을 가진 바리스터를 제조할 수 있었다.

• 한국자기학회지
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• 제10권1호
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• pp.1-6
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• 2000

단롤법으로 제조된 비정질 F $e_{79.7}$ S $i_{9.3}$ $B_{9.7}$N $i_{1.4}$ 합금 리본의 직류중첩특성을 향상시키기 위하여 46$0^{\circ}C$에서 열처리 시간에 따른 자기적 특성과 미세구조의 변화를 조사하였다. 직류중첩특성은 미세구조의 변화와 밀접한 연관성이 있음이 관찰되었다. $\alpha$-Fe 결정립의 크기가 200~300 nm일 경우 가장 효과적으로 자벽 이동을 방해하여 최대 직류중첩특성을 나타내었다. 수지상정의 성장 형태와 분포는 2개의 영역으로 분리되어 나타나며, 이는 리본 제조 시 발생하는 리본 내 과냉도의 차이에 기인한 것이다.한 것이다.

• 한국세라믹학회지
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• 제34권12호
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• pp.1240-1246
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• 1997

Silicon carbides with self-reinforced microstructure which hore a small grain matrix and dispersed large grains with rod-like type were prepared by the liquid-phase sintering and the control of starting phases of raw materials. The specimens with self-reinforced microstructure could be obtained from the compacts with mixed compositions of $\alpha$-SiC and 10-50 % $\beta$-SiC powders and by the pressureless sintering at 185$0^{\circ}C$ for 5h. Large grains with rod or plate-like types were 4H-SiC and small grains with equi-axed type were 6H-SiC. Fracture grains with rod or plate-like types were 4h-SiC and small grains with equi-axed type were 6H-SiC. Fracture toughness of specimens with self-reinforced microstructure was increased by the crack deflection and formation of microcracking due to the existence of rod-like large grains during crack propagation.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.853-855
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• 1998

The electrical resistivity and mechanical properties of the hot-pressed and annealed ${\beta}$-SiC+39vol.%$ZrB_2$ electroconductive ceramic composites were investigated as a function of the liquid forming additives of $Al_{2}O_{3}+Y_{2}O_{3}$(6:4wt%). In this microstructures. no reactions were observed between $\beta$-SiC and $ZrB_2$, and the relative density is over 97.6% of the theoretical density. Phase analysis of composites by XRD revealed mostly of a $\alpha$-SiC(6H, 4H), $ZrB_2$ and weakly $\beta$-SiC(15R) phase. The fracture toughness decreased with increased $Al_{2}O_{3}+Y_{2}O_{3}$ contents and showed the highest for composite added with 4wt% $Al_{2}O_{3}+Y_{2}O_{3}$ additives. The electrical resistivity increased with increased $Al_{2}O_{3}+Y_{2}O_{3}$ contents because of the increasing tendency of pore formation according to amount of liquid forming additives $Al_{2}O_{3}+Y_{2}O_{3}$. The electrical resistivity of composites is all positive temperature coefficient resistance(PTCR) against temperature up to $700^{\circ}C$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1436-1438
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• 2001

The $\beta$-SiC + $ZrB_2$ ceramic electroconductive composites were pressureless-sintered and annealed by adding 12wt% $Al_2O_3$ + $Y_2O_3$ (6 : 4wt%) powder as a function of sintering temperature. The relative density showed the highest value of 81.1% at 1900$^{\circ}C$ sintering temperature. The phase analysis of the composites by XRD revealed of $\alpha$-SiC(6H), $TiB_2$, $Al_5Y_2O_{12}$ and $\beta$-SiC(15R). Flexural strength showed the highest value of 230 MPa for composites sintered at 1900$^{\circ}C$. The vicker's hardness and the fracture toughness showed the highest value of increased with increasing sintering temperature and showed the highest of 9.88 GPa and 6.05 $MPa{\cdot}m^{1/2}$ at 1900$^{\circ}C$. The electrical resistivity was measured by the Pauw method from 25$^{\circ}C$ to 700$^{\circ}C$. The electrical resistivity of the composites showed the PTCR (Positive Temperature Coefficient Resistivity).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 연구회
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• pp.118-122
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• 2001

The ${\beta}-SiC+TiB_2$ ceramic electroconductive composites were pressureless-sintered and annealed by adding 12wt% $Al_2O_3+Y_2O_3$(6 : 4wt%) powder as a function of sintering temperature. The relative density is over 78.83% of the theoretical density and increased with increasing sintering temperature. The phase analysis of the composites by XRD revealed of $\alpha$-SiC(6H), $TiB_2$, $Al_5Y_2O_{12}$ and $\beta$-SiC(15R). Flexural strength showed the highest of 140 MPa for composites sintered at $1900^{\circ}C$. The vicker's hardness increased with increasing sintering temperature and showed the highest of 4.07 GPa at $1900^{\circ}C$. Owing to YAG, the fracture toughness showed the highest of 4.07 $MPa{\cdot}m^{1/2}$ for composites at $1900^{\circ}C$. The electrical resistivity was measured by the Pauw method from $25^{\circ}C$ to $700^{\circ}C$. The electrical resistivity of the composites showed the PTCR(Positive Temperature Coefficient Resistivity).

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2013년도 춘계학술대회 논문집
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• pp.53-54
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• 2013

Nano-multilayered CrAlSiN films consisting of crystalline CrN nanolayers and amorphous AlSiN nanolayers were deposited by cathodic arc plasma deposition. Their oxidation characteristics were studied between 600 and $1000^{\circ}C$ for up to 70 h in air. During their oxidation, the amorphous AlSiN nanolayers crystallized. The formed oxides consisted primarily of $Cr_2O_3$, ${\alpha}-Al_2O_3$, $SiO_2$. The outer $Al_2O_3$ layer formed by outward diffusion of Al ions. Simultaneously, an inner ($Al_2O_3$, $Cr_2O_3$)-mixed layer formed by the inward diffusion of oxygen ions. $SiO_2$ was present mainly in the lower part of the oxide layer due to its immobility. The CrAlSiN films displayed good oxidation resistance, owing to the formation of oxide crystallites of $Cr_2O_3$, ${\alpha}-Al_2O_3$, and amorphous $SiO_2$.

• 한국세라믹학회지
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• 제36권12호
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• pp.1356-1363
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• 1999

출발원료의 상분을 제어와 가압소결 및 열처리에 의하여 자체강화 미세구조를 갖는 탄화규소 세라믹스를 제조하여 그 특성을 고찰하였다. 자체강화 탄화규소 세라믹스는 알파상과 베타상 탄화규소 분말을 혼합한 모든 원료조합으로부터 얻어졌으며, 이러한 미세구조는 열처리 동안 베타상 탄화규소 입자가 긴 막대상 입자 형태를 갖는 4H 상의 알파 탄화규소로 상변태하면서 형성되었다. 긴 막대상의 탄화규소 입자의 부피분율 및 장단축비는 베타상 탄화규소 분말의 함유량이 50%인 시편에서 가장 크게 나타났으며, 이로 인하여 이 시편은 제조된 시편 중에서 가장 높은 인성을 나타내었다.

• 한국세라믹학회지
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• 제33권8호
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• pp.921-927
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• 1996

The liquid-phase concentration from the interior to the surface region and its influence on the microstructural changes were investigated in pressureless sintered $\beta$-SiC Surface reaction-layer was formed by reaction of packing powder and volatile components on the surface during sintering which was induced the concentration of liquid-phase in the surface regions. The microstructural changes between the surface region and the interior were appeared in sintered specimen which was resulted from the difference of liquid-phase content during sintering. Microstructural changes were observd with the depth of about 250${\mu}{\textrm}{m}$ from he surface. The grain size and aspect ratio of SiC in the interior are larger than those in the surface region and the rate of transforma-tion of $\beta$-to $\alpha$-SiC during sintering is higher in the interior than that in the surface region.