• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.56 no.9
• /
• pp.1602-1608
• /
• 2007

The composites were fabricated, respectively, using 61[vol.%] SiC-39[vol.%] $TiB_2$ and using 61[vol.%] SiC-39[vol.%] $ZrB_2$ powders with the liquid forming additives of 12[wt%] $Al_2O_3+Y_2O_3$ by hot pressing annealing at $1650[^{\circ}C]$ for 4 hours. Reactions between SiC and transition metal $TiB_2$, $ZrB_2$ were not observed in this microstructure. The result of phase analysis of composites by XRD revealed SiC(6H, 3C), $TiB_2$, $ZrB_2$ and $YAG(Al_5Y_3O_{12})$ crystal phase on the Liquid-Phase-Sintered(LPS) $SiC-TiB_2$, and $SiC-ZrB_2$ composite. $\beta\rightarrow\alpha-SiC$ phase transformation was occurred on the $SiC-TiB_2$ and $SiC-ZrB_2$ composite. The relative density, the flexural strength and Young's modulus showed the highest value of 98.57[%], 249.42[MPa] and 91.64[GPa] in $SiC-ZrB_2$ composite at room temperature respectively. The electrical resistivity showed the lowest value of $7.96{\times}10^{-4}[\Omega{\cdot}cm]$ for $SiC-ZrB_2$ composite at $25[^{\circ}C]$. The electrical resistivity of the $SiC-TiB_2$ and $SiC-ZrB_2$ composite was all positive temperature coefficient resistance (PTCR) in the temperature ranges from $25[^{\circ}C]$ to $700[^{\circ}C]$. The resistance temperature coefficient of composite showed the lowest value of $1.319\times10^{-3}/[^{\circ}C]$ for $SiC-ZrB_2$ composite in the temperature ranges from $100[^{\circ}C]$ to $300[^{\circ}C]$ Compositional design and optimization of processing parameters are key factors for controlling and improving the properties of SiC-based electroconductive ceramic composites.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.331-332
• /
• 2007

Surface micromachined SiC devices have readily been fabricated from the polycrystalline (poly) 3C-SiC thin film which has an advantage of being deposited onto $SiO_2$ or $Si_3N_4$ as a sacrificial layer. Therefore, in this work, magnetron reactive ion etching process which can stably etch poly 3C-SiC thin films grown on $SiO_2$/Si substrate at a lower energy (70 W) with $CHF_3$ based gas mixtures has been studied. We have investigated the etching properties of the poly 3C-SiC thin film using PR/Al mask, according to $O_2$ flow rate, pressure, RF power, and electrode gap. The etched RMS (root mean square), etch rate, and etch profile of the poly 3C-SiC thin films were analyzed by SEM, AFM, and $\alpha$-step.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.22 no.5
• /
• pp.233-240
• /
• 2012

White LEDs (light-emitting diodes) are promising new-generation light sources which can replace conventional lamps due to their high reliability, low energy consumption and eco-friendly effects. This paper briefly reviews recent progress of oxy/nitride host phosphor and quantum dot materials with broad excitation band characteristics for phosphor-converted white LEDs. Among oxy/nitride host materials, $M_2Si_5N_8$ : $Eu^{2+}$, $MAlSiN_3$ : $Eu^{2+}$ M-SiON (M = Ca, Sr, Ba), ${\alpha}/{\beta}$-SiAlON : $Eu^{2+}$ are excellent phosphors for white LED using blue-emitting chip. They have very broad excitation bands in the range of 440~460 nm and exhibit emission from green to red. In this paper, In this review we focus on recent developments in the crystal structure, luminescence and applications of the oxy/nitride phosphors for white LEDs. In addition, the application prospects and current trends of research and development of quantum dot phosphors are also discussed.

• The Journal of Engineering Research
• /
• v.1 no.1
• /
• pp.15-22
• /
• 1997

The crystallization behaviours of cordierite gel derived from sol-gel method and glass prepared from conventional melting method with or without $TiO_2$ as nucleants are compared. The densification temperature of gel is $810^{\circ}C$ and its chemical structure identified by IR analysis is same as that of glass melted by conventional method. The beginning crystallization temperature of gel is $965^{\circ}C$ lower than that of melted glass with 10wt% $TiO_2$, which is $978^{\circ}C$. The crystalline phases developed from gel during heat treatment are identified as spinel, $\beta$-quartz solid solution and $\alpha$-cordierite crystal and crystalline phases in case of glass are (Mg,Al)TiOn and $\beta$-quartz solid solution and $\alpha$-cordierite crystal, respectively. The crystallization in melted glass with nucleants occurs through bulk crystallization and in case of that without nucleants surface crystallization occurs, while the crystallization in gel is internal crystallization from interface between particles formed after densification.

• Korean Chemical Engineering Research
• /
• v.43 no.4
• /
• pp.503-510
• /
• 2005

In this research, composite alumina was prepared to add the various promoters by sol-gel method and examined its thermal stability. After sintering at $1,200^{\circ}C$, the thermal stability resulted in following order, $Si{\fallingdotseq}La$ > Ti > $Ba{\fallingdotseq}Ce$ > Y > $Zr{\fallingdotseq}Mg$, in accordance with adding the promoters. Especially in case of silica-added alumina, a phase transformation temperature to ${\alpha}$-alumina increased about $150^{\circ}C$ and after sintering at $1,200^{\circ}C$, it showed to maintain in ${\gamma}$-form and ${\delta}$-form alumina phase. Also it showed an increase of surface area from $3m^2/g$ to $71m^2/g$ compared with pure ${\alpha}$-alumina. In the case of silicaadded alumina, the characterization change of this alumina particle resulted in a delay of phase transformation because Si-O-Al bond was increased when sintered at high temperature. In case of lanthanum-added alumina, there was a sintering delay phenomenon in inter-particles as $LaAlO_3$ structure existed. The existence of lanthanum structure was confirmed by XRD and XPS analysis. It appeared on the alumina surface as $La_2O_3$ structure when it was sintered under $1,000^{\circ}C$, as the perovskite structure of $LaAlO_3$ at above $1,000^{\circ}C$ and as the magneto-plumbite structure of $LaAl_{11}O_{18}$ at above $1,300^{\circ}C$.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.24 no.2
• /
• pp.59-64
• /
• 2014

Crystallographic phases of Plasma electrolytic oxidized Al alloy, A1050, were investigated. The electrolyte of PEO was $Na_2Si_2O_3$ and KOH. Unipolar pulse, $ 2000{\mu}sec$ with $400{\mu}sec+420V$ impulse, were applied for 2 min, 5 min, 15 min, and 30 min. ${\gamma}-Alumina$, as well as ${\alpha}-alumina$, was main crystal phase. ${\gamma}-Alumina$ was appeared in the beginning, then the amount of ${\alpha}-alumina$ was increased with time, but the amount of ${\gamma}-Alumina$ remained constant without any increasing. So, it is concluded that plasma gas produce ${\gamma}-Alumina$ at the first, and then ${\gamma}-Alumina$ transform ${\alpha}-alumina$ finally. During the transformation, high temperature of micro plasma gives transformation energy.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.38 no.12
• /
• pp.1367-1372
• /
• 2014

As the awareness of the environmental crisis has recently increased around the world, numerous studies in the transport industry have been conducted to solve this problem through lightweight car bodies. The hot-stamping process has been presented as solution to achieve a light weight. Hot-stamping is a method that is used to obtain ultra-high strength steel (1,500 MPa or greater) by simultaneously forming and cooling boron steel in a press die after heating it to a temperature of $900^{\circ}C$ or above. This study involved a, fundamental examination of laser parameters to investigate the laser weldability of boron steel. As a result, the following optimum parameters for the shielding gas were found: Q = 20 l/min, ${\alpha}=40^{\circ}$, d = 20mm, and l = 0 mm. The hardness of butt weldment increasesed sharply as a result of martensite formation at the fusion zone.

• Korean Chemical Engineering Research
• /
• v.53 no.2
• /
• pp.247-252
• /
• 2015

ZSM-5 crystals grew on the surface of ${\alpha}$-SiC and ${\beta}$-SiC particles by hydrothermal synthesis method. SiC particles which were > $50{\mu}m$ of size were used, and oxide layer were developed on the surface of the particles to induce growth of ZSM-5 from the surface. Then, synthesis time and temperature condition were considered growing ZSM-5. In this study, oxide layer was formed on ${\beta}$-SiC at $900^{\circ}C$ in air, and it was controlled to grow ZSM-5 grew from the ${\beta}$-SiC surface with $150^{\circ}C$ synthesis condition. This is due to Si-O-Si or Si-O-Al bond, which is basic framework of ZSM-5 can be easily formed, from the silicon oxide film on the surface of ${\beta}$-SiC. When the synthesis temperature was $200^{\circ}C$, the size of ZSM-5 was increased, and it covered much area of the SiC surface with better crystal shapes with longer synthesis time.

• Korean Chemical Engineering Research
• /
• v.49 no.5
• /
• pp.664-668
• /
• 2011

Spherical alumina precursors represented by $AlO_xCl_y(OH)_z$, 30~200 nm in particle diameter, were prepared by partial hydrolysis of $AlCl_3$ vapor in a 500 ml reactor. Investigated on the particle morphology and size were the effects of the reaction time, the stirring speed and the reaction temperature. The particle morphology and size was insensitive to the reaction time in the range 20 to 300 s. The variation of the stirring speed from 0 to 300 and 800 rpm showed that the particle size was the largest at 0 rpm. As the temperature was varied from 180 to 190, 200, $140^{\circ}C$, the particle size showed a maximum at $190^{\circ}C$. By calcination of the as-produced particles at $1,200^{\circ}C$ for 6h with a heating rate of $10^{\circ}C$/min, ${\alpha}$-alumina particles 45 nm in surface area equivalent diameter were obtained. The particle shape after calcination turned wormlike due to sintering between neighboring particles. A rapid calcination at $1400^{\circ}C$ for 0.5 h with a higher heating rate of $50^{\circ}C$/min reduced the sintering considerably. An addition of $SiCl_4$ or TMCTS(2,4,6,8-tetramethylcyclosiloxane) to the $AlCl_3$ reduced the sintering effectively in the calcination step; however, peaks of ${\gamma}$ or mullite phase appeared. An addition of $AlF_3$ to the particles obtained from the hydrolysis resulted in a hexagonal disc shaped alumina particles.

• Journal of the Korean Ceramic Society
• /
• v.29 no.5
• /
• pp.357-366
• /
• 1992

Residual organics were considered as impurity in Sol-Gel method. The purpose of this study was to find the conditions to contain as much residual organics as possible in silica gel prepared from TEOS(tetraethylortho-silicate) by Sol-Gel method. Residual organics are to be expected to have reduction effect on synthesizing Si3N4 from silica gel. The results of this study are follows: 1) The maximum content of entrapped carbon was 19.8 wt.%(C/SiO2=0.25 wt.ratio) in silica gel synthesized under the conditions 1.5 fold mole water for incomplete hydrolysis, 2.5 fold mole phenol as a solvent and 0.1 fold mole HCl as a catalyst to TEOS. 2) Silica gel with organics entrapped by Sol-Gel method had a positive effect on the formation of Si3N4 compared with commercial silica gel. 3) Sintered body of synthesized $\alpha$-Si3N4 with Y2O3 and Al2O3 as additives at 175$0^{\circ}C$ in N2 atmosphere showed bending strength, 602$\pm$20 MPa and frature toughness 4.45$\pm$0.15 MPa.m1/2.