• Title/Summary/Keyword: $\Omega$ Type

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DBR PSi/Polymer Composite Materials -Dual Photonic Characteristics (DBR 다공성 실리콘/고분자 Composite 재료-이중적 광학특성)

  • Park, Cheol-Young;Jang, Seung-Hyun;Kim, Ji-Hoon;Park, Jae-Hyun;Koh, Young-Dae;Kim, Sung-Jin;Ko, Young-Chun;Sohn, Hong-Lae
    • Journal of the Korean Vacuum Society
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    • v.16 no.3
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    • pp.221-226
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    • 2007
  • DBR (distributed Bragg reflectors) PSi (porous silicon) composite films displaying dual optical properties, both optical reflectivity and photoluminescence had been developed. DBR PSi samples were prepared by electrochemical etch of heavily doped $p^{++}-type$ silicon wafers (boron doped, polished on the <100> face, resistivity of $0.8-1.2m{\Omega}-cm$, Siltronix, Inc.). Free-standing DBR PSi films were treated with PMMA (polymethyl methacrylate) to produce flexible, stable composite materials in which the PSi matrix is covered with PMMA containing photoluminescent polysiloles. Optical characteristics of DBR PSi/polysilole-impregnated PMMA composite materials exhibit both their photonic reflectivity at 565 nm and photoluminescence at 510 nm, simultaneously. A possible application of this materials will be discussed.

Improved Conductivities of SWCNT Transparent Conducting Films on PET by Spontaneous Reduction

  • Min, Hyeong-Seop;Kim, Sang-Sik;Lee, Jeon-Guk
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.10a
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    • pp.43.2-43.2
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    • 2011
  • Single-walled carbon nanotubes (SWCNT) are transparent in the visible and show conductivity comparable to copper, and are environmentally stable. SWCNT films have high flexibility, conductivity and transparency approaching that indium tin oxide (ITO), and can be prepared inexpensively without vacuum equipment. Transparent conducting Films (TCF) of SWCNTs has the potential to replace conventional transparent conducting oxides (TCO, e.g. ITO) in a wide variety of optoelectronic devices, energy conversion and photovoltaic industry. However, the sheet resistance of SWCNT films is still higher than ITO films. A decreased in the resistivity of SWCNT-TCFs would be beneficial for such an application. We fabricated SWCNT sheet with $KAuBr_4$ on PET substrate. Arc-discharge SWCNTs were dispersed in deionized water by adding sodum dodecyl sulfate (SDS) as surfactant and sonicated, followed by the centrifugation. The dispersed SWCNT was spray-coated on PET substrate and dried on a hotplate at $100^{\circ}C$. When the spray process was terminated, the TCF was immersed into deionized water to remove the surfactant and then it was dried on hotplate. The TCF film was then treated with AuBr4-, rinsed with deionized water and dried. The surface morphology of TCF was characterized by field emission scanning electron microscopy. The sheet resistance and optical transmission properties of the TCF were measured with a four-point probe method and a UV-visible spectrometry, respectively. $HNO_3$ treated SWCNT films with Au nano-particles have the lowest 61 ${\Omega}$/< sheet resistance in the 80% transmittance. Sheet resistance was decreased due to the increase of the hole concentration at the washed SWCNT surface by p-type doping of $AuBr_4{^-}$.

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The Effects of Etch Process Parameters on the Ohmic Contact Formation in the Plasma Etching of GaN using Planar Inductively Coupled $CH_4/H_2/Ar$ Plasma (평판 유도 결합형 $CH_4/H_2/Ar$ 플라즈마를 이용한 GaN 건식 식각에서 공정변수가 저항성 접촉 형성에 미치는 영향)

  • Kim, Mun-Yeong;Tae, Heung-Sik;Lee, Ho-Jun;Lee, Yong-Hyeon;Lee, Jeong-Hui;Baek, Yeong-Sik
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.49 no.8
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    • pp.438-444
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    • 2000
  • We report the effects of etch process parameters on the ohmic contact formation in the plasma etching of GaN. Planar inductively coupled plasma system with $CH_4/H_2/Ar$gas chemistry has been used as etch reactor. The contact resistance and the specific contact resistance have been investigated using transfer length method as a function of RF bias power and %Ar gas concentration in total flow rate. AES(Auger electron spectroscopy) analysis revealed that the etched GaN has nonstoichiometric Ga rich surface and was contaminated by carbon and oxygen. Especially large amount of carbon was detected at the sample etched for high bias power (or voltage) condition, where severe degradation of contact resistance was occurred. We achieved the low ohmic contact of $2.4{\times}10^{-3} {\Omega}cm^2$ specific contact resistance at the input power 400 W, RF bias power 150 W, and working pressure 10mTorr with 10 sccm $CH_4$, 15 sccm H2, 5 sccm Ar gas composition.

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Design and Electrical Properties of Piezoelectric Energy Harvester for Roadway (도로용 압전발전발판 설계 및 발전특성 평가)

  • Kim, Chang-Il;Lee, Joo-Hee;Kim, Kyung-Bum;Jeong, Young-Hun;Cho, Jeong-Ho;Paik, Jong-Hoo;Lee, Young-Jin;Nahm, Sahn
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.7
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    • pp.554-558
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    • 2011
  • Piezoelectric energy harvester (PEH) as a box type was fabricated in order to harvest mechanical energy imparted to roadways from passing vehicles and convert it into electricity. The PEH was composed of 72 piezoelectric cantilevers with 9 springs with elasticity stick to a bottom of the PEH. For the single piezoelectric cantilever, when a single push with approximately 5 mm displacement was incident to it, power of 0.355 mW was produced at $100\;k{\Omega}$. It is found that the power from the single piezoelectric cantilever increases when spring constant is high. We investigated power of PEH when the moving vehicle passes in it. Power was increased with increasing vehicle speed. When vehicle speed is 30 km/h, power is 20.6 mW.

Analysis on the Induced Lightning Shielding Effect According to the Neutral Wire Installation Structure of a 22.9kV Distribution Line (22.9kV 배전선로 중성선 설치 구조에 따른 유도뢰 차폐효과 분석)

  • Kim, Jeom-Sik;Kim, Do-Young;Park, Yong-Beom
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.59 no.2
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    • pp.191-196
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    • 2010
  • The electricity distribution system in Korea is adopting a multi-grounding system. Protection of this distribution system against lightning is performed by installing overhead ground wires over the high voltage wires, and connecting the overhead ground wires to the ground every 200 m. The ground resistance in this system is limited not to exceed $50\Omega$ and overhead ground wire and neutral wire are multiple parallel lines. Although overhead ground wire and neutral wire are installed in different locations on the same pole, this circuit configuration has duplicated functions of providing a return path for unbalanced currents and protecting the distribution system against induced lightning. Therefore, the purpose of this study is to analyze the induced lightning shielding effect according to the neutral wire installation structure of a 22.9kV distribution line in order to present a new 22.9kV distribution line structure model and characteristics. This study calculated induced lightning voltage by performing numerical analysis when an overhead ground wire is present in the multi-grounding type 22.9kV distribution line structure, and calculated the induced lightning shielding effect based on this calculated induced lightning voltage. In addition, this study proposed and analyzed an improved distribution line model allowing the use of both overhead wire and neutral wire to be installed in the current distribution lines. The result of MATLAB simulation using the conditions applied by Yokoyama showed almost no difference between the induced lightning voltage developed in the current line and that developed in the proposed line. This signifies that shielding the induced lightning voltage through overhead wire makes no difference between current and proposed distribution line structures. That is, this study found that the ground resistance of the overhead wire had an effect on the induced lightning voltage, and that the induced lightning shielding effect of overhead wire is small.

Design of Electromagnetically Driven Micro Scanning Mirror for Laser Animation System (레이저 디스플레이를 위한 전자력 구동 스캐닝 미러의 설계)

  • Lee, Kyoung-Gun;Jang, Yun-Ho;Yoo, Byung-Wook;Jin, Joo-Young;Lim, Yong-Geun;Kim, Yong-Kweon
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.58 no.3
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    • pp.578-585
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    • 2009
  • In this paper, we present the design of an electromagnetic scanning mirror with torsional springs. The scanning mirror consisting of torsional springs and electromagnetic coils was designed for the applications of laser animation systems. We analyzed and optimized three types of torsional springs, namely, straight beam springs (SBS), classic serpentine springs (CSS), and rotated serpentine springs (RSS). The torsional springs were analyzed in terms of electrical resistance, fabrication error tolerance, and resonance mode separation of each type using analytical formula or numerical analysis. The RSS has advantages over the others as follows: 1) A low resistance of conductors, 2) wide resonance mode separation, 3) strong fabrication error tolerance, 4) a small footprint. The double-layer coils were chosen instead of single-layer coils with respect to electromagnetic forces. It resulted in lower power consumption. The geometry of the scanning mirror was optimized by calculations; RSS turn was 12 and the width of double-layer coil was $100{\mu}m$, respectively. When the static rotational angle is 5 degrees, the power consumption of the mirror plate was calculated to be 9.35 mW since the resistance of the coil part and a current is $122{\Omega}$ and 8.75 mA, respectively. The power consumption of full device including the mirror plate and torsional springs was calculated to be 9.63 mW.

A Study on the Improvement on the Target Structure in a Magnetron Sputtering Apparatus (마그네트론 스퍼터링 장치의 타겟구조 개선에 관한 연구)

  • Bae, Chang-Hwan;Lee, Ju-Hee;Han, Chang-Suk
    • Journal of the Korean Society for Heat Treatment
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    • v.23 no.1
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    • pp.23-28
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    • 2010
  • The cylindrical magnetron sputtering has not been widely used, although this system is useful for only certain types of applications such as fiber coatings. This paper presents electrode configurations which improved the complicacy of the target assembly by using the positive voltage power supply. It is a modified type which has a target constructed with a large cylindrical part, a conical part and a small cylindrical part. When positive voltage was applied to an anode, a stable glow discharge was established and a high deposition rate was obtained. The substrate bias current was monitored to estimate the effect of ion bombardment. As a result, it was found that the substrate current was large. With cylindrical and conical cathode magnetron sputter deposition on the surface of the substrate to prevent re-sputtering, ion impact because it can increase the effectiveness with excellent ductility and adhesion of Ti film deposition can be obtained. We board at the front end of the ground resistance of $5\;k{\Omega}$ attached to the substrate potential can be controlled easily, and Ti film deposition with excellent adhesion can be obtained. Microstructure and morphology of Ti films deposited on pure Cu wires were investigated by scanning electron microscopy in relation to preparation conditions. High level ion bombardment was found to be effective in obtaining a good adhesion for Cu wire coatings.

PHOTOMETRIC OBSERVATIONS AND ANALYSIS OF THE W UMa TYPE ECLOPSING BINARY VW Cep (W UMa형 식쌍성 VW Cep의 측광관측과 분석)

  • 강봉석;이용삼;정장해
    • Journal of Astronomy and Space Sciences
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    • v.17 no.1
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    • pp.19-32
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    • 2000
  • A total of 1,018 observations (509 in B, 509 in V) of the eclipsing binary VW Cep was made during 7 nights from April through May in 1999 at Sobaeksan Optical Astronomy Observatory, using the CCD camera attached to the 61cm telescope. A time of minimum light of HJD2451327.2282 was determined from our data, and we constructed BV light curves with the data. Using, Wilson-Devinney’s binary model, we analized the light curves. The absolute dimension of $M_1=0.95M_\odot,M_2=0.33M_\odot,R_1=1.02R_\odot,R_2=0.66R_\odot$ of the VW Cep system were derived from our light curve solution and Kaszas et al. (1998) spectroscopic results.

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Identification and Characterization of Agar-degrading Vibrio sp. GNUM08123 Isolated from Marine Red Macroalgae (한천분해 미생물 Vibrio sp. GNUM08123의 동정 및 agarase 생산의 발효적 특성)

  • Chi, Won-Jae;Kim, Yoon Hee;Kim, Jong-Hee;Hong, Soon-Kwang
    • Microbiology and Biotechnology Letters
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    • v.45 no.3
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    • pp.243-249
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    • 2017
  • An agar-degrading bacterium, designated as the GNUM08123 strain, was isolated from samples of red algae collected from the Yongil Bay near East Sea, Korea. The isolated GNUM08123 strain was gram-negative, aerobic, motile, and beige-pigmented, with $C_{16:0}$ (25.9%) and summed feature 3 (comprising $C_{16:1}{\omega}7c/iso-C_{15:0}2-OH$, 34.4%) as its major cellular fatty acids. A similarity search based on the 16S rRNA gene sequence revealed that it belonged to class Gammaproteobacteria and shared 97.7% similarity with the type strain Vibrio chagasii $R-3712^T$. The DNA G+C content of strain $GNUM08123^T$ was 46.9 mol%. The major isoprenoid quinone was ubiquinone-8. The results of DNA-DNA relatedness and 16S rRNA sequence similarity analyses, in addition to its phenotypic and chemotaxonomic characteristics, suggest that strain GNUM08123 is a novel species within genus Vibrio, designated as Vibrio sp. GNUM08123. Agarase production by strain GNUM08123 was induced by agar and sucrose, but was repressed probably owing to carbon catabolite repression by glucose and maltose.

Electrical Properties of ZnO-Bi2O3-Co3O4 Varistor (ZnO-Bi2O3-Co3O4 바리스터의 전기적 특성)

  • Hong, Youn-Woo;Shin, Hyo-Soon;Yeo, Dong-Hun;Kim, Jin-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.11
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    • pp.882-889
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    • 2011
  • In this study, we have investigated the effects of Co doping on I-V curves, bulk trap levels and grain boundary characteristics of ZnO-$Bi_2O_3$ (ZB) varistor. From I-V characteristics the nonlinear coefficient (a) and the grain boundary resistivity (${\rho}_{gb}$) decreased as 32${\rightarrow}$22 and 18.4${\rightarrow}0.6{\times}10^9{\Omega}cm$ with sintering temperature (900~1,300$^{\circ}C$), respectively. Admittance spectra and dielectric functions show two bulk traps of zinc interstitial, $Zn_i^{{\cdot}{\cdot}}$(0.16~0.18 eV) and oxygen vacancy, $V_o^{{\cdot}}$ (0.28~0.33 eV). The barrier of grain boundaries in ZBCo (ZnO-$Bi_2O_3-Co_3O_4$) could be electrochemically single type. However, its thermal stability was slightly disturbed by ambient oxygen because the apparent activation energy of grain boundaries was changed from 0.93 eV at the 460~580 K to 1.13 eV at the 620~700 K. It is revealed that Co dopant in ZB reduced the heterogeneity of the barrier in grain boundaries and stabilized the barrier against the ambient temperature.