• 제목/요약/키워드: $\Omega$ Type

검색결과 731건 처리시간 0.025초

과산화수소를 이용한 몰리브덴(Mo) 용해반응에 따른 청정기술 개발에 관한 연구(II) (A clean technology development using the molybdenum dissolution reaction with hydrogen peroxide(II))

  • 김재우;홍종순;신대윤
    • 환경위생공학
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    • 제14권3호
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    • pp.116-122
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    • 1999
  • The purpose of this study is to develop new process named "hydrogen peroxide dissolution method". This process used hydrogen peroxide, which is harmless to human body and oxidize molybdenum wire selectively.The advantages of hydrogen peroxide dissolution method were no discharge of noxious matter when dissolution of molybdenum wire which used as the center supporter, reactions occur in room temperature and easy to recover dissolved molybdenum. This study was aimed at gathering the basic data of molybdenum wire dissolution-recovery process and proposes the reaction condition of molybdenum wire dissolution-recovery process and the factors influencing those reactions. The results were as follows:1. In the dissolution of molybdenum wire, the early condition of reaction was $15^{\circ}C$, and the temperature condition of state was $32^{\circ}C$. 2. 1) In the GSL-60W type, P.W.(Piece weight) was 11.89mg, C.R. was $65.6\Omega$. 2) In the FL-20W type, P.W. was 11.60mg, C.R. was $4.6\Omega$. 3. The molybdenum of process water was treated of a precipitation after dry and after stagnation in the one day, the molybdenum of upper water was treated of precipitation after dry and after congelation.

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Flavobacterium amnigenum sp. nov. Isolated from a River

  • Patil, Kishor Sureshbhai;Padakandla, Shalem Raj;Chae, Jong-Chan
    • Journal of Microbiology and Biotechnology
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    • 제28권9호
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    • pp.1536-1541
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    • 2018
  • A yellowish, flexirubin-pigment-producing strain $I3-3^T$ was isolated from river water in Iksan, the Republic of Korea. The strain was gram-negative, aerobic, non-motile, showed catalase and oxidase activities, and could grow at a temperature range of $10-35^{\circ}C$, pH 5.0-10 and 0-2.0% (w/v) of NaCl. The major fatty acids were iso-$C_{15:0}$, iso-$C_{17:0}$ 3-OH and summed feature 3 (comprising $C_{16:1}{\omega}7c$ and/or $C_{16:1}{\omega}6c$). The isolate contained phosphatidylethanolamine, one aminolipid, and two unidentified lipids as the major polar lipids. Menaquinone-6 (MK6) was the major respiratory quinone. The G+C content of the genomic DNA of strain $I3-3^T$ was 35.6%. Comparison of the 16S rRNA gene sequence with the sequences of the closely related type strains showed highest sequence similarity of 96.95% and 96.93% to Flavobacterium nitrogenifigens $NXU-44^T$ and Flavobacterium compostarboris $15C3^T$, respectively. Based on phenotypic and phylogenetic distinctiveness, strain $I3-3^T$ is considered as a member of novel species within the genus Flavobacterium, for which Flavobacterium amnigenum sp. nov. is proposed. The type strain is $I3-3^T$ (=KCTC $52884^T$ =NBRC $112871^T$).

Cu/In 성분비에 따른 CuInS$_2$박막의 전기적 특성 (Electrical Properties of CuInS$_2$Ratio)

  • 박계춘;정우성;장영학;이진;정해덕
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1995년도 추계학술대회 논문집
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    • pp.109-112
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    • 1995
  • CuInS$_2$thin film was prepared by heat treatment at vacuum 10$\^$-3/ Torr of S/In/Cu stacked layer which was deposited by sequential. And so, the polycrystalline CuInS$_2$with chalcopyrite structure was well made at heat treatment temperature of 250$^{\circ}C$ and heat treatment time of 60 min. Single phase of CuInS$_2$was formed from Cu/In composition ratio of 0.84 to 1.3. p conduction type of CuInS$_2$thin film was appeared from Cu/In competition ratio of 0.99. The highest resistivity of CuInS$_2$with p type was 1.608${\times}$10$^2$$\Omega$cm at Cu/In composition ratio of 0.99 and The lowest resistivity was 5.587${\times}$10$\^$-2/$\Omega$cm at Cu/In composition ratio of 1.3.

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BCB를 이용한 High & Low$Z_0$전송선로 제작에 대한 연구 (Studies on the fabrication of transmission line with high and low $Z_0$ using BCB layer)

  • 한효종;이성대;전영훈;윤관기;김삼동;황인석;이진구;류기현
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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    • pp.57-60
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    • 2002
  • In this paper, transmission lines with low and high characteristic impedance (Z$_{0}$) are fabricated and analyzed. The transmission lines are fabricated on the benzo-cyclo-butene (BCB) films of a low dielectric constant. For the low Z$_{0}$, two types of coplanar waveguide (CPW) structures are fabricated, which include bottom-ground and double-ground type. Measurement shows that Z$_{0}$ values for each CPW type are 7.3 and 9.4$\Omega$, respectively, at a signal line width of 100 #m. Whit the ratio between the spacing of bottom-ground and the signal line with becomes greater than 2.5, the Z$_{0}$ is nearly saturated. In addition, thin film microstrip lines fabricated using the BCB insertion layers show very low Z$_{0}$ of 25.5$\Omega$, and this impedance is ~64 % of the values obtained from the BCB-based CPW structures of the same line width. Measurement result of CPW on BCB layer is 100.5 Ω.s 100.5 Ω.

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디스크형 압전 변압기의 전기적 특성 (Electric Characteristics of Disk-type Piezoelectric Transformer)

  • 김동수;김광일;김흥락;정우철;남효덕
    • 한국전기전자재료학회논문지
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    • 제18권11호
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    • pp.1007-1013
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    • 2005
  • In this study, a step-down piezoelectric transformer was fabricated to utilize as an adapter for charging batteries of mobile electronic appliances. The ceramic part of the transformer is $Pb[(Mn_{1/3}Sb_{2/3})_{_0.05}Zr_{0.475}Ti_{0.475}]O_3$ with mechanical quality factor of 1600, electromechanical coupling coefficient $59\%$, and piezoelectric constant $d_{33}$ 1300, which can be utilized as a piezoelectric transformer. A simply fabricated disk-typed test pattern of diameter 28 mm and thickness 2 mm was used to characterize output voltage, step-down ratio as a function of electrode area with the input remained constant, and power, efficiency as a function of input voltage, and temperature-dependent electric characteristics were evaluated. The sample APT1 showed the best properties. The highest admittance, effective electromechanical coupling coefficient and an appropriate mechanical quality factor were obtained at the sample with the input/output area ratio of 1:1.5 at the common electrode, and the condition of 20 $V_{rms}$, $50\;\Omega$ made the maximum efficiency of $95\%$. The temperature was increased by 14.7'E as the input voltage was increased for $50\;V_{rms},\;50\;\Omega$.

제미니형 양이온 계면활성제 합성 및 Spacer 길이에 따른 물성 (Synthesis of Gemini Type Cationic Surfactants and Properties of Spacer Length)

  • 박종권;정노희
    • 한국응용과학기술학회지
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    • 제31권1호
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    • pp.1-6
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    • 2014
  • Gemini type of cationic surfactant, namely ${\alpha},{\omega}$-alkane-bis(N-lauroyloxyethyl-N,N-dimethyl)-diammonium bromide was synthesized and confirmed by FT-IR and $^1H$-NMR spectroscopy. Their inhibition effect on corrosion of mild steel in 1 M HCl solution was tested by weight loss method. Surface tensions were measured by surface tensiometer Sigma 70. Their c.m.c. values evaluated by surface tension method was $4.01{\times}10^{-5}{\sim}4.99{\times}10^{-5}mol/L$. The Krafft point of the these surfactants were < $0^{\circ}C$. The emulsifying properties of synthesized cationic gemini surfactants and sodium dodecyl sulfate (SDS), tetradecyl trimethyl ammonium bromide (TTAB) was investigated. Of these, ${\alpha},{\omega}$-alkane-bis(N-lauroyloxyethyl-N,N-dimethyl)-diammonium bromide has been confirmed as a good emulsifier. The inhibition efficiency increases by increasing cationic gemini surfactant concentration. As a result, these surfactants are expected to be applied as corrosion inhibitors.

MOCVD법에 의한 (Ga, Al) As/GaAs 변형된 영지우물 레이저 다이오드의 제작 (The Fabrication of (Ga, Al) As/GaAs Modified Multi-Quantum Well Laser Diode by MOCVD)

  • 김정진;강명구;김용;엄경숙;민석기;오환술
    • 전자공학회논문지A
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    • 제29A권9호
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    • pp.36-45
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    • 1992
  • The Modified Multi-Quantum Well(MMQWAl) structures have been grown by Mental-Organic chemical Vapor Deposition(MOCVD) method and stripe type MMQW laser diodes have been investigated. In the case of GaAs/AlGaAs superlattice and quantum well growth by MOCVD, the periodicity, interface abruptess, Al compositional uniformity and layer thickness have been confirmed though the shallow angle lapping technique, double crystal x-ray diffractometry (DCXD) and photoluminescence (PL) measurement. stripe-type MMQW laser diodes have been fabricated using the process technology of photolithography, chemical etching, ohmic contact, back side removing and cleaving. As the result of the electrical and opticalmeasurement of these laser diodes, we have achieved the series resistance of $1[\Omega}~2{\Omega}$ by current-voltage measurements, the threshold current of 200-300mA by currnt-light measurements and the lasing wavelength of 8000-8400$\AA$ by lasing spectrum measurements.

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Effect of Thickener Type on the Rheological Properties of Hot Thickened Soups Suitable for Elderly People with Swallowing Difficulty

  • Kim, Sung-Gun;Yoo, Whachun;Yoo, Byoungseung
    • Preventive Nutrition and Food Science
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    • 제19권4호
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    • pp.358-362
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    • 2014
  • Flow and dynamic rheological properties of hot thickened soups for consumption by the elderly people with swallowing difficulty (dysphagia) were investigated at a serving temperature of $60^{\circ}C$. In this study, sea mustard soup (SMS) and dried pollock soup (DPS), which have been widely known as favorable hot soups provided in a domestic hospitals and nursing homes for dysphagic patients, were thickened with four commercial xanthan gum (XG)-based food thickeners (coded A~D) marketed in Korea. Thickened soups prepared with different thickeners showed high shear-thinning flow behaviors (n=0.15~0.21). Apparent viscosity (${\eta}_{a,50}$), consistency index (K), storage modulus (G'), and loss modulus (G") demonstrated differences in rheological behaviors between the XG-based thickeners. The magnitudes of (G') were much higher than those of (G") over the entire range of frequency (${\omega}$) with the high dependence on ${\omega}$, showing the rheological behavior similar to a weak gel. In general, all rheological parameter values of thickened DPS samples were higher when compared to the thickened SMS samples. These results indicate that flow and dynamic rheological properties of hot thickened soups containing commercial XG-based thickeners are strongly dependent on the type of thickener and soup.

A Wilkinson-Type Balun Using a Composite Right/Left-Handed Transmission Line

  • Park, Unghee
    • Journal of information and communication convergence engineering
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    • 제11권3호
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    • pp.147-152
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    • 2013
  • A novel balun being the structure of a Wilkinson power divider is suggested and fabricated. One of the power dividing paths in the suggested balun uses a conventional ${\lambda}/4$ transmission line for $-90^{\circ}$ phase shifting, and the other path uses a composite right/left-handed -${\lambda}/4$ transmission line for $+90^{\circ}$ phase shifting with four series capacitors and three parallel inductors. In addition, the suggested balun uses two $50-{\Omega}$ resistors and a conventional $50-{\Omega}$ transmission line of ${\lambda}/2$ electrical length between the two output ports, achieving good isolation and reflection values of two balanced ports. The suggested balun is simulated by the advanced design system simulation program and fabricated on TLX-9 20-mil substrate. The fabricated balun has a very good values of $S_{11}$ = -27.46 dB, $S_{21}$ = -3.40 dB, and $S_{31}$ = -3.28 dB, a phase difference of $-179.5^{\circ}$, a magnitude difference of 0.12 dB, and a delay difference of 0.1 ns, with $S_{22}$ = -36.28 dB, $S_{33}$ = -27.19 dB, and $S_{32}$ = -25.2 dB at 1 GHz, respectively.

레이저 활성화에 의한 p형 Sic와 비합금 Mo 오믹 접합 (Characteristics of Non-alloyed Mo Ohmic Contacts to Laser Activated p-type SiC)

  • 이형규;이창영;송지헌;최재승;이재봉;김기호;김영석;박근형
    • 한국전기전자재료학회논문지
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    • 제16권7호
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    • pp.557-563
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    • 2003
  • SiC has been an useful material for the high voltage, high temperature, and high frequency devices, however, the required high process temperature to activate the implanted p-type dopants has hindered further developments. In this study, we report, for the first time, on the laser activation of implanted Al and non-alloyed Mo ohmic contacts and its application to MOSFET fabrication. The contact and sheet resistance measured from CTLM patterns have decreased by increasing laser power, and the lowest values are 3.9 $K\Omega$/$\square$ and 1.3 $\times$ 10$^{-3}$ $\Omega$-cm$^2$, respectively, at the power density of 1.45 J/cm$^2$ The n-MOSFETs fabricated on laser activated p-well exhibit well-behaved I-V characteristics and threshold voltage reduction by reverse body voltage. These results prove that the laser process for implant activation is an alternative low temperature technology applicable to SiC devices.