• 제목/요약/키워드: $(Sr,Ca)TiO_3$

검색결과 195건 처리시간 0.027초

Yb2O3가 첨가된 (Ba1Sr1Ca)TiO3후막의 치밀화와 유전특성 (Densification and Dielectric Properties of Yb2O3 doped (Ba1Sr1Ca)TiO3 Thick Films)

  • 박상만;이영희;남성필;이성갑
    • 한국전기전자재료학회논문지
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    • 제20권7호
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    • pp.581-586
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    • 2007
  • [ $(Ba_{0.57}Sr_{0.33}Ca_{0.10})TiO_3$ ] (BSCT) powders, prepared by sol-gel method, were mixed with organic vehicle and the BSCT thick films were fabricated by the screen printing method. The structural and dielectric properties were investigated as a function of the $Yb_2O_3$ doping contents. As a result of the TG-DTA, exothermic peak was observed at around $670^{\circ}C$ due to the formation of the polycrystalline perovskite phase. All BSCT thick films showed the typical XRD patterns of a cubic polycrystalline structure. The average thickness of all BSCT thick films was about $70{\mu}m$. The grain size of the BSCT thick film doped with 0.7 mol% $Yb_2O_3$ was approximately $6.2{\mu}m$. The Curie temperature and relative dielectric constant at room temperature decreased with increasing $Yb_2O_3$ amount. Relative dielectric constant and dielectric loss of the specimen doped with 0.1 mol% $Yb_2O_3$ were 4637 and 19 % at Curie temperature, respectively.

열확산 시간에 따른 (Sr.Ca)$TiO_3$계 세라믹의 미세구조 및 유전특성 (Microstructure and Dielectric Properties of (Sr.Ca)$TiO_3$-based Ceramics on the thermal diffusing time)

  • 강재훈;김충혁;송민종;최운식
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2001년도 하계학술대회 논문집 C
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    • pp.1387-1389
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    • 2001
  • In this paper, the microstructure and the dielectric properties of the $Sr_{1-x}Ca_xTiO_3$($0{\leq}x{\leq}0.2$)-based grain boundary layer ceramics were investigated. The 2nd phase formed by thermal diffusing from the surface lead to a very high apparent dielectric constant, ${\varepsilon}_r$ > 50000, and tan$\delta$ < 0.05, $\Delta$C < ${\pm}$ 10%.

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(Sr.Ca)TiO$_3$ 세라믹의 정전용량-전압특성에 관한 연구 (A Study on the Capacitance-Voltage Properties of the (Sr.Ca)TiO$_3$ Ceramic)

  • 김진사;최운식;신철기;정일형;김용주;이준웅
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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    • pp.299-303
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    • 1996
  • In this Study, the capacitance-voltage properties of the (Sr$\_$1-x/$.$Ca$\_$x/)$\_$m/TiO$_3$(0.05$\leq$x$\leq$0.2, m=0.996, 1, 1.004) ceramics were investigated. The results of the capacitance-voltage measurements indicated that the grain boundary was composed of the continuous insulating layers. The capacitance is almost unchanged below about 20[V] but it decreases slowly about 20[V]. The thick of the effective depleation layer was calculated by using the average grain size, it was in the range of 760∼3400[${\AA}$].

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Dielectric Properties of Zr-doped (Ba,Sr,Ca)TiO3 Thick Films for Microwave Phase Shifters

  • Lee, Sung-Gap;Lee, Sang-Heon
    • Transactions on Electrical and Electronic Materials
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    • 제4권2호
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    • pp.24-28
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    • 2003
  • (Ba,Sr,Ca)TiO$_3$ powders, prepared by the sol-gel method, were mixed with organic binder and the BSCT thick films were fabricated by the screen printing techniques on alumina substrates. All the BSCT thick films, sintered at 1420$^{\circ}C$, showed the typical XRD patterns of a perovskite polycrystalline structure. The average grain sizes decreased with increasing amounts of ZrO$_2$, and the BSCT(40/40/20) thick films doped with 2wt% MnO$_2$ showed a value of 8$\mu\textrm{m}$. The thickness of thick films by four-cycle on printing/drying was approximately 951$\mu\textrm{m}$. The relative dielectric constant decreased with increasing Ca content and MnO$_2$ doping amount. The relative dielectric constant, dielectric loss and tunability of the BSCT(50/40/10) thick films doped with 2.0wt% ZrO$_2$ were 772, 0.184% and 15.62%, respectively.

RF 스퍼터링법에 의한 (SrCa)Ti $O_3$ 세라믹 박막의 제초 및 미세구조 (Fabrication and microstructure of (Sr .Ca)Ti $O_3$ Ceramic Thin Films by RF Sputtering Method-)

  • 김진사;정일형;백봉현;김충혁;최운식;오재한;이준웅
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1997년도 추계학술대회 논문집
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    • pp.189-193
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    • 1997
  • (S $r_{0.85}$/C $a_{0.15}$)Ti $O_3$(SCT) thin films at various deposition temperature and rf power were grown by rf magnetron sputtering method on optimized Pt-based electrodes (Pt/TiN/ $SiO_2$/Si). The crystallinity of the films increases with increasing deposition temperature. SCT thin film is depend on the surface morphology and crystallinity of Pt films for bottom electrode. Dielectric constant of (S $r_{0.85}$C $a_{0.15}$)Ti $O_3$ thin films deposited on Si wafer substrate are larger with the increase of deposition temperature and gain size.in size.

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(Sr$_{1-x}.Ca_x)$TiO$_3$세라믹의 Ca변화량얘 따른 전기적인 특성 (Electrical Properies with Ca Contents of the (Sr$_{1-x}.Ca_x)$TiO$_3$Ceramic)

  • 김진사;정일형;신철기;김충혁;최운식;이준웅
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1997년도 춘계학술대회 논문집
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    • pp.318-322
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    • 1997
  • The (Sr$_{l-x}$.Ca$_{x}$)TiO$_3$(0.05$\leq$x$\leq$0.2) ceramics were fabricated to form semiconducting ceramics by sintering at about 1350[$^{\circ}C$] in a reducing atmosphere($N_2$gas). After being fired in a reducing atmosphere, metal oxides, CuO, was painted on the both surface of the specimens to diffuse to the grain boundary. They were annealed at 1100[$^{\circ}C$] for 2 hours and cooled to room temperature. The grain boundary was composed of the continuous insulating layers. The capacitance changes slowly and almost linearly in the temperature region of -30~+85[$^{\circ}C$]. The capacitance characteristics appears a stable value within $\pm$10[%]. The conduction mechanism of the specimens observed in the temperature range of 25~125[$^{\circ}C$], and is divined into three regions haying different mechanism as the current increased: the region I below 230[V/cm] shows the ohmic conduction. The region II can be explained by the Poole-Frenkel emission theory, and the region III is dominated by the tunneling effect.ect.

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스크린 프린팅을 이용한 초전형 BSCT 후막의 제작 (Preparation of pyroelectric BSCT thick films by screen-printing)

  • 노현지;이성갑;남성필;이영희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.165-166
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    • 2008
  • $(Ba_{0.6},Sr_{0.3},Ca_{0.1})TiO_3$ powders, which were prepared by sol-gel method using a solution of Ba-acetate, Sr-acetate and Ca-acetate and Ti iso-propoxide, were mixed with organic vehicle and the BSCT thick films were fabricated by the screen-printing techniques on high purity alumina substrates. The structural and dielectirc properties were investigated for various $Pr_2O_3$ and $Y_2O_3$doping contents. As a result of thermal analysis of $(Ba_{0.6},Sr_{0.3},Ca_{0.1})TiO_3$ powders, the exothermic peak was observed at around $670^{\circ}C$ due to the formation of the polycrystalline perovskite phase. All BSCT thick films, sintered at $1420^{\circ}C$ for 2h, showed the typical XRD patterns of perovskite polycrystalline structure. The average grain size of the specimens decreased with amount of $Pr_2O_3$ and $Y_2O_3$ contents.

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($Sr_{1-x}Ca_x)TiO_3$ 세라믹 박막의 제조 및 유전특성 (Fabrication and Dielectric Properties of $(Sr_{1-x}Ca_x)TiO_3$ Ceramic Thin Films)

  • 김진사;조춘남;오용철;신철기;김충혁;송민종;소병문;최운식;이준웅
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2003년도 하계학술대회 논문집 C
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    • pp.1496-1498
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    • 2003
  • The $(Sr_{0.85}Ca_{0.15})TiO_3$(SCT) thin films were deposited on Pt-coated electrode (Pt/TiN/$SiO_2$/Si) using RF sputtering method according to the deposition condition. The optimum conditions of RF power and Ar/$O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about 18.75[${\AA}/min$] at the optimum condition. The capacitance characteristics had a stable value within ${\pm}4[%]$. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films were observed above 200[kHz].

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Dielectric Properties of Ca0.8Sr1.2Nb3O10 Nanosheet Thin Film Deposited by the Electrophoretic Deposition Method

  • Yim, Haena;Yoo, So-Yeon;Choi, Ji-Won
    • 센서학회지
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    • 제27권1호
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    • pp.1-5
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    • 2018
  • Two-dimensional (2D) niobate-based nanosheets have attracted attention as high-k dielectric materials. We synthesized strontiumsubstituted calcium niobate ($Ca_{0.8}Sr_{1.2}Nb_3O_{10}$) nanosheets by a two-step cation exchange process from $KCa_{0.8}Sr_{1.2}Nb_3O_{10}$ ceramic. The $K^+$ ions were exchanged with $H^+$ ions, and then H+ ions were exchanged with tetrabutylammonium ($TBA^+$) cations. The $Ca_{0.8}Sr_{1.2}Nb_3O_{10}$ nanosheets were then exfoliated, decreasing the electrostatic interaction between each niobate layer. Furthermore, $Ca_2Nb_3O_{10}$ nanosheets were synthesized in same process for comparison. Each exfoliated nanosheet shows a single-crystal phase and has a lateral size of over 100 nm. The nanosheets were deposited on a $Pt/Ti/SiO_2/Si$ substrate by the electrophoretic deposition (EPD) method at 40 V, followed by ultraviolet irradiation of the films in order to remove the remaining $TBA^+$ ions. The $Ca_{0.8}Sr_{1.2}Nb_3O_{10}$ thin film exhibited twice the dielectric permittivity (~60) and lower dielectric loss than $Ca_2Nb_3O_{10}$ thin films.

저온소결 (Pb,Ca,Sr,)(Ti,Mn,Sb)O3 세라믹스를 이용한 두께진동모드 적층 압전 변압기의 전기적 특성 (Electrical Properties of Thickness-Vibration-Mode Multilayer Piezoelectric Transformer using Low Temperature Sintering (Pb,Ca,Sr,)(Ti,Mn,Sb)O3 Ceramics)

  • 류주현;유경진;김도형
    • 한국전기전자재료학회논문지
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    • 제20권11호
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    • pp.948-952
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    • 2007
  • In this study, a low temperature sintering multilayer piezoelectric transformer for a DC-DC converter was manufactured using $(Pb,Ca,Sr,)(Ti,Mn,Sb)O_3$ ceramics. Its electrical properties were investigated according to the variation in frequency and load resistance. The voltage step-up ratio of the multilayer piezoelectric transformer showed a maximum value at a resonant frequency of input part and increased with an increase of load resistance. The efficiency of the multilayer piezoelectric transformer showed the highest value at a load resistance of 17 $\Omega$. The output power was increased with increasing input voltage. Temperature increase of the multilayer piezoelectric transformer was increased with the increase of output power. At the load resistance of 17 $\Omega$, the multilayer piezoelectric transformer showed the temperature rises of about $20^{\circ}C$ at the output power of 18 W, and stable driving characteristics.