Here we report the long-term stability of polymer:nonfullerene solar cells which were stored under dark and indoor light condition. The polymer:nonfullerene solar cells were fabricated using bulk heterojunction (BHJ) layers of poly[(2,6-(4,8-bis(5-(2-ethylhexyl) thiophen-2-yl)-benzo[1,2-b:4,5-b']dithiophene))-alt-(5,5-(1',3'-di-2-thienyl-5',7-bis(2-ethylhexyl)benzo[1',2'-c:4',5'-c']dithiophene-4,8-dione))] (PBDB-T) and 3,9-bis(6-methyl-2-methylene-(3-(1,1-dicyanomethylene)-indanone))-5,5,11,11-tetrakis(4-hexylphenyl)-dithieno[2,3-d:2',3-d']-s-indaceno[1,2-b:5,6-b']dithiophene (IT-M). To investigate their long-term stability, the PBDB-T:IT-M solar cells were stored in an argon-filled glove box. One set of the fabricated solar cells was completely covered with an aluminum foil to prevent any effect of light, whereas another set was exposed to indoor light. The solar cells were subjected to a regular performance measurement for 40 weeks. Results revealed that the PBDB-T:IT-M solar cells underwent a gradual decay in performance irrespective of the storage condition. However, the PBDB-T:IT-M solar cells stored under indoor light condition exhibited relatively lower power conversion efficiency (PCE) than those stored under the dark. The inferior stability of the solar cells under indoor light was explained by the noticeably changed optical absorption spectra and dark spot generation, indicative of degradations in the BHJ layers.

In this study, Mitigation of Potential-induced degradation (PID) for PERC solar cells using SiO2 Structure of ARC layer. The conventional PID test was conducted with a cell-level test based on the IEC-62804 test standard, but a copper PID test device was manufactured to increase the PID detection rate. The accelerated aging test was conducted by maintaining 96 hours with a potential difference of 1000 V at a temperature of 60℃. As a result, the PERC solar cell of SiO2-Free ARC structure decreased 22.11% compared to the initial efficiency, and the PERC solar cell of the Upper-SiO2 ARC structure decreased 30.78% of the initial efficiency and the PID reliability was not good. However, the PERC solar cell with the lower-SiO2 ARC structure reduced only 2.44%, effectively mitigating the degradation of PID. Na+ ions in the cover glass generate PID on the surface of the PERC solar cell. In order to prevent PID, the structure of SiNx and SiO2 thin films of the ARC layer is important. SiO2 thin film must be deposited on bottom of ARC layer and the surface of the PERC solar cell N-type emitter to prevent surface recombination and stacking fault defects of the PERC solar cell and mitigated PID degradation.

Transparent photovoltaics (PV) are used in various applications such as building-integrated photovoltaics (BIPV). However, crystalline silicon (c-Si) is not used for developing transparent PV due to its opaque nature. Here. we fabficate the three holes in 6-inch c-Si solar cells using laser scribing process with an opening area ratio of about 6.8% for transparent c-Si solar modules. Moreover, we make the shingled strings using the perforated cells. Our 7 interconnected shingled string PV cells with 21 holes show a solar to power conversion of 5.721 W. In next work, we will fabricate a transparent c-Si PV module with perforated strings.

Output power of photovoltaic (PV) modules installed outdoors decreases every year due to environmental conditions such as temperature, humidity, and ultraviolet irradiations. In order to promote the installation of PV modules, the reliability must be guaranteed. One of the important factors affecting reliability is intermetallic compounds (IMC) layer formed in ribbon solder joint. For this reason, various studies on soldering properties between the ribbon and cell have been performed to solve the reliability deterioration caused by excessive growth of the IMC layer. However, the IMC layer of the PV module interconnected by multi-wires has been studied less than using the ribbon. It is necessary to study soldering characteristics of the multi-wire module for improvement of its reliability. In this study, we analyzed the growth of IMC layer of the PV module with multi-wire and the degradation of output power through damp-heat test. The fabricated modules were exposed to damp-heat conditions (85 ºC and 85 % relative humidity) for 1000 hours and the output powers of the modules before and after the damp-heat test were measured. Then, the process of dissolving ethylene vinyl acetate (EVA) as an encapsulant of the modules was performed to observe the IMC layer. The growth of IMC layer was evaluated using OM and FE-SEM for cross-sectional analysis and EDS for elemental mapping. Based on these results, we investigated the correlation between the IMC layer and output power of modules.

It is very important to optimize the reflectance of incident light in solar modules for improving output power and reducing loss of cell-to-module (CTM). It is assumed that a higher reflectance backsheet may improve optical efficiency. However how much output power is related to optical properties by reflectance property of backsheets have not been revealed clearly yet. A total of 3 types of industrial backsheets with 3 type of industrial encapsulants (EVA or POE) were analyzed as fabricated mini modules used shingled cells. According to the type of backsheets, the difference between the highest and lowest average reflectance in the range of 400 nm to 1200 nm was found to be 13.08% by UV-visible spectroscopy. Also, when using the same encapsulant, the maximum gap value of the output power increase was measured by about 3.755 mW% (166.02 mW). The correlation between reflectance and output power was experimentally found by measuring the output property of the fabricated shingled mini modules.