Since the modern computer architecture was suggested by Von Neumann in 1945, computer has become inevitable for our life. This brilliant growth of computer has been led by device miniaturization trend, so called Moore's law. Especially, the explosive growth of memory devices such as DRAM and Flash have played key role in huge enlarging utilization of computer. However, abrupt increase of data used for many applications in big data era provoke the excessive energy consumption of data center which results from the inefficiency of conventional memory-storage hierarchy. As a solution, the application of new memory devices has been brought up for innovative memory-storage hierarchy. In this paper, the current development status and prospect of new memory devices will be discussed.

Vacuum growth of thin films via chemical vapor deposition (CVD) methods has been extensively used in modern semiconductor and flat panel display industries. The CVD processes have a wide range of variation and are categorized according to their working conditions, power sources, precursor materials, and so forth. Basic components and process steps common to all CVD branches are discussed. In addition, characteristics and applications of two major CVD techniques - LPCVD and PECVD - are reviewed briefly.

Lithography is widely recognized as one of the key steps in the manufacture of ICs and other devices and/or structures. However, as the dimensions of features made using lithography become smaller, lithography is becoming a more critical factor for enabling miniature IC or other devices and/or structures to be manufactured. As explained above, to make it happen, many other important technologies will have to be addressed. The vacuum technology is one of them and the engineers and experts are paying attention on vacuum technology including vacuum pumps. Especially high Vacuum(HV) and Ultra high vacuum(UHV) are not easy and not simple one. So the manpower who can understand vacuum technology with long experience in vacuum industry is important with basic study.

Advanced process and integration for future semiconductor devices is approaching the physical limit. The new materials with low dimensional structure have recently attracted great attention due to its expandability for the future electronic devices. In order to apply the materials to future semiconductor devices, the control of carrier scattering is critical issue. That is, the carrier scattering with physical quantity in low dimensional structure significantly modulates the device characteristics. We introduce the role of defect in several future semiconductor materials and devices. The analysis of defect in the structure becomes the most important techniques. In particular, surface defect in nano structures totally controls the device characteristics. The changes imply that the metrology field is leading the future industry for semiconductor.