This paper presents an attempt to develop probabilistic multistress life models to evaluate the lifetime characteristics of epoxy-encapsulated magnet wire with heavy build polyurethane enamel. A set of accelerated life tests were conducted over a wide range of pulsating voltages, temperatures, and frequencies. Samples of fine gauge twisted pairs of the encapsulated magnet wire were tested us-ing a pulse endurance dielectric test system. An electrical-thermal lifetime function was combined with the Weibull distribution of lifetimes. The parameters of the combined Weibull-electrical-thermal model were estimated using maximum likelihood estimation. Likewise, a generalized electrical-thermal-frequency life model was also developed. The parameters of this new model were estimated using multiple linear regression technique. It was found in this paper that lifetime estimates of the two proposed probabilistic multistress life models are good enough. This suggests the suitability of using the general electrical-thermal-frequency model to estimate the lifetime of the encapsulated magnet wire over a wide range of voltages, temperatures and pulsating frequencies.

The waveforms of partial discharges (PDs) imply physical and structural properties of PD sources, so analyzing them give us information on the kind of PD sources and the location. Waveforms of PD as a time series function have variable amplitudes but sustain a certain uniform shape, which shows well the characteristics of the waveforms and frequency region. They can also be used as parameters having time and frequency information of PD signals and applied to classification of multiple PDs sources via Artificial Neural Network with back propagation (BP) learning.

The occurrence of partial discharge (PD) in solid dielectrics is very harmful because it leads to the deterioration of insulation by electrical, chemical, and thermal reactions as a combined action of the discharged ions bombarding the surface and by the action of chemical compounds that are formed by the discharge. Consequently, if any defects are present in the solid insulation system, performance decreases until the system breaks down. Therefore, removing or suppressing the defect is very important. Voids are a typical defect in the solid insulation system and are very harmful because they deteriorate insulation. As a basic step, studying the properties of PD in voids is important because an accurate knowledge of these properties is required to estimate the deterioration of voids. In this paper, the correlation between the size of voids and internal PD is discussed as a function of the time of the applied voltage and its magnitude. Magnitude, repetition rate, average discharge power, and average discharge current of PD in specimens with large voids were found to be larger than the others in this experiment. The smaller specimens had voids when the magnitude and number of PDs were reduced.

The characteristics of accelerated soft error rate (ASER) for fabricated 8M SRAM are evaluated for various well structures. The application of the Buried NWell (BNW) and the variations of each well structure, well dose in process conditions are checked by ASER failure in time (FIT) in terms of reliability. The application of only the BNW shows the lowest ASER FIT value. The BNW added to the Buried PWell (BPW) shows a 200% increase and the BNW plus the Striped BPW (SBPW) shows a 100% increase compared to applying the BNW. The cases of applying SBPW show very high ASER FIT.

The co-evaporated cathodes composed of A1 and CsF is adopted to enhance the electrical and the optical properties of organic light emitting diodes (OLEDs). The hole transport layer (HTL), made of 50nm thick N,N-dipheny1-N,N-bis(3-methylphenyl)-1,1-bipheny14,4-diamine (TPD), and the electron transport layer (ETL), made of 50nm thick tris(8-hydroxy-quinoline) aluminum (A1q$_3$), were deposited under the base pressure of 1.6$\times$10$^{-6}$ Torr. In depositing A1-CsF, the mass ratio of CsF is varied between 1 and 10wt%. OLEDs with co-evaporated cathodes have luminance of about 35,000cd/$m^2$, and external quantum efficiency of about 1.38%. Cs tends to diffuse into the organic layer and then re-forms Cs$^{+}$cation and free electron with the Cs-doped surface region.n.

Structural properties of Cu-Ni alloy films, such as preferred orientation, crystallite size, in-ter-planar spacing, cross-sectional morphology, and electrical resistivity, are investigated in terms of tar-get configurations that are used in the film deposition by means of magnetron co-sputtering. Two different target configurations are considered in this study: a dual-type configuration in which two separate tar-gets (Cu and Ni) and different bias types (RF and DC) are used and a Ni-on-Cu type configuration in which Ni chips are attached to a Cu target. The dual-type configuration appears to have some advantages over the Ni-on-Cu type regarding the accurate control of atomic composition of the deposited Cu-Ni alloy. However, the dual-type-produced film exhibits a porous and columnar structure, the relatively large internal stress, and the high electrical resistivity, which are mainly due to the relatively low mobility of adatoms. The affects of thermal treatment and deposition conditions on the structural and electrical properties of dual-type Cu-Ni films are also discussed.

In this paper, we have studied the in-situ end point detection (EPD) for direct chemical mechanical polishing (CMP) of shallow trench isolation (STI) structures without the reverse moat etch process. In this case, we applied a high selectivity $1n (HSS) that improves the silicon oxide removal rate and maximizes oxide to nitride selectivity Quite reproducible EPD results were obtained, and the wafer-to-wafer thickness variation was significantly reduced compared with the conventional predetermined polishing time method without EPD. Therefore, it is possible to achieve a global planarization without the complicated reverse moat etch process. As a result, the STI-CMP process can be simplified and improved using the new EPD method.