Barium titanyl oxalates, strontium titanyl oxalates and calcium zirconyl oxalates were prepared with variation of solution concentration and method of adding mixed metal ion solution into oxalic acid. Then they were aged in distilled water, ethanol or methanol, respectively. Barium titanyl oxalates and calcium zironyl oxalates were grown in water and strontium titanyl oxalates were groun in both water and methanol. They were supposed to be grown through the solutionl and reprecipitation mechanism. Nonuniform dispersion of particles in liquid phase is thought to cause abnormal particle growth.

On the basis of growth mechanism proposed by recent work, partile of barium titanyl oxalate was controlled by aging in water. From aging at $25^{\circ}C$ for 3 hours, uniform particles of 0.3 ${\mu}$m were obtained. During aging, abnormal particle growth was observed, which were thought to be caused by impurities in water. With increase of aging time and temperature, particle grows more, and differential growth was promoted. In aging for long time, grown particles were cracked.

PLZT ceramics having two nominal compositions, $Pb_{1-3x/2}La_xV_{x/2}(Zr_{03}Ti_{03})O_3$ and $Pb_{1-x}La_x(Zr_{0.2}Ti_{0.5})_{1-x/4}V_{x/4}O_3$ (V: vacancy) with x=0.00~0.30, were prepared. The physical, structural, and dielectric properties were investigated by X-ray diffraction, scanning electron microscopy, Raman spectroscopy, and measurements of bulk density and dielectric constant. The two series with A-stie and B-site vacancies showed different physical, structural, dielectric properties, and, specially, Curie temperature. In comparison to PLZT with B-site vacancies, PLZT with A-site vacancies showed high Curie temperatures and low maxima of dielectric constant. Consequently, it is evident that the properties of PLZT ceramics depend on the vacancy formula adopted as a batch composition in preparation.

Long term stability, sensitization in air, and gas sensing behaviors of tin oxide films were investigated with doping of antimony and palladium. The tin oxide films were prepared on a Corning glass by reactive rf sputtering method and tested for detection of hydrogen gas. Sb-doping improved a long-term stability in the base resistance of $SnO_2$ film sensor. A small amount of Pd doping caused the optimum sensor operating temperature to reduce and also enhanced the gas sensitivity, compared with the undoped $SnO_2$ film. Gas sensitivity depended largely on the film thickness. The important sensitization reactions for sensor operating were $(O_{2ads})+e^-\;{\rightarrow}\;2(O_{ads})^-$ on the surface of $SnO_2$ film at elevated temperature in air and a followed reaction of hydrogen atoms with $(O_{ads})^-$ ions.

Aluminum and zinc titanium silicate sol-gel films were fabricated for application of waveguide and the effect of additions of ZnO and $Al_2O_3$ to binary titanium silicate films was investigated. During firing, the films are densified as they shrunk and their refractive index increases in the range of 1.58-1.83 depending on the film composition. The attenuation of the waveguides is not sensitive to changes in composition except for zinc titanium silicate waveguides which have substantially higher attenuation. However, the increase in the attenuation with aging of the waveguides depend upon the composition of waveuides. The addition $Al_2O_3$ or the reduced $SiO_2$ content in the composition appears to slow the deterioration of the waveguides due to the formation of more stable bonds and increased acidity on the film surface. Also, the wavelength dependence of the attenuation of the waveguides varies with composition. The attenuation of the waveguides except for the $65SiO_2{\cdot}35TiO_2$ composition are not Rayleigh scatter limited, suggesting the absorption loss of the waveguides due to the effects of residual carbon and structural defects in the films.

Variations of the leakage current behaviors and interface potential barrier $({\Phi}_B)$ of rf-sputter deposited (Ba, Sr)$TiO_3$ (BST) thin films with thicknesses ranging from 20 nm to 150nm are investigated as a function of the thickness and bias voltages. The top and bottom electrodes are dc-sputter-deposited Pt films. ${\Phi}_B$ critically depends on the BST film deposition temperature, postannealing atmosphere and time after the annealing. The postannealing under $N_2$ atmosphere results in a high interface potential barrier height and low leakage current. Maintaining the BST capacitor in air for a long time reduces the ${\Phi}_B$ from about 2.4 eV to 1.6 eV due to the oxidation. ${\Phi}_B$ is not so dependent on the film thickness in this experimental range. The leakage conduction mechanism is very dependent on the BST film thickness; the 20 nm thick film shows tunneling current, 30 and 40 nm thick films show Shottky emission current.

The Mg-PSZ/$Al_2O_3$ fibers were fabricated by the sol-gel method. The added $Al_2O_3$ amounts were varied from 5 to 20 mol%. The phase transformation studies of a drawn Mg-PSZ/$Al_2O_3$ fibers were investigated by use of X-ray diffraction, IR and Raman spectroscopy. Microstructure and tensile strength of fibers were subjected to scanning electron microscopy and tensile strength tester. When $Al_2O_3$ was added to the Mg-PSZ fibers, it was found out from the analysis of XRD patterns and Raman spectra that a small amount of crystalline spinel($MgAl_2O_4$) started to form due to the reaction between $Al_2O_3$ and MgO, at $1000^{\circ}C$, and the phase transformation temperature of $ZrO_2$ crystal phase at different sintering temperatures increased. Also, the rapid grain growth with average size of 2.0 ${\mu}m$ shown in Mg-PSZ fiber at $1500^{\circ}C$ was considerably suppressed to 0.39 ${\mu}m$ by adding $Al_2O_3$ at the same temperature. When the Mg-PSZ/$Al_2O_3$ fibers containing 5 mol% $Al_2O_3$ were sintered $800^{\circ}C$ for 1 hr, average tensile strength of fibers was 0.9 GPs at diameters of 20 to 30 ${\mu}m$, but as the sintering temperatures was increased to $1000^{\circ}C$ for 1 hr, average tensile strength of fibers increased to 1.2 GPa in the same diameter range.

Dielectric properties at microwave frequency region of the five-layered compound $Ba_5Nb_4O_{15}$ prepared by the conventional solid state reaction method were investigated. $Ba_5Nb_4O_{15}$ has excellent microwave dielectric characteristics; ${\varepsilon}_r$=38, Q=7500 at 10 GHz, and ${\tau}_l$=+50 ppm/K. Since this compound has a high dielectric constant, high Q and sufficiently stable characteristics, it is useful for the applications at microwave frequencies.