한국전자통신학회논문지 (The Journal of the Korea institute of electronic communication sciences)

한국전자통신학회 (Korea Institute of Electronic Communication Science)
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우주항공 응용을 위한 내방사선 10T SRAM

Radiation-Hardened 10T SRAM Cell for Aerospace Applications

  • 박형우 (한국공학대학교 나노반도체공학과) ;
  • 조성훈 (한국공학대학교 나노반도체공학과)
  • Hyeong-Woo Park ;
  • Sung-Hun Jo (Dept. of Nano & Semiconductor Engineering, Tech University of Korea)
  • 투고 : 2024.09.10
  • 심사 : 2024.10.12
  • 발행 : 2024.10.31
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초록

우주 방사선은 전자 장치의 신뢰성에 상당한 위협을 주고있다. 우주 방사선은 주로 태양에서 방출되는 고에너지 입자등으로 구성되며, 우주의 진공 상태에서는 이러한 입자를 흡수하거나 분산시킬 보호 장치가 부족하다. 이러한 고에너지 입자에 노출되면 반도체 장치, 특히 메모리 장치에 치명적인 손상을 일으킬 수 있으며, 이는 우주 산업 전반에 심각한 영향을 미칠 수 있다. 따라서 본 논문에서는 우주 방사선 환경에서 높은 신뢰성을 유지할 수 있는 새로운 메모리 비트 셀 설계 방식을 제안한다.

Cosmic radiation poses a significant threat to the reliability of electronic devices. Cosmic radiation mainly consists of high-energy particles emitted from the sun, and there is no protection device to absorb or disperse these particles in the vacuum of space. Exposure to these high-energy particles can cause fatal damage to semiconductor devices, especially memory devices, and this can have serious implications for the entire space industry. Therefore, in this paper, we propose a new memory bit cell design method that can maintain high reliability in a space radiation environment.

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참고문헌

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