한국결정성장학회지 (Journal of the Korean Crystal Growth and Crystal Technology)

  • 제34권4호
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  • Pages.109-116
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  • 2024
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  • 1225-1429(pISSN)
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  • 2234-5078(eISSN)
한국결정성장학회 (The Korea Association of Crystal Growth)
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EFG 법으로 성장시킨 β-Ga2O3 단결정의 다양한 결정면, off-angle에 따른 epitaxial layer의 특성 분석

Characterization of epitaxial layers on beta-gallium oxide single crystals grown by EFG method as a function of different crystal faces and off-angle

  • 채민지 (동의대학교 신소재공학과) ;
  • 서선영 (동의대학교 신소재공학과) ;
  • 장희연 (동의대학교 신소재공학과) ;
  • 신소민 (동의대학교 신소재공학과) ;
  • 김대욱 (동의대학교 신소재공학과) ;
  • 김윤진 (동의대학교 신소재공학과) ;
  • 박미선 (동의대학교 신소재공학과) ;
  • 정광희 (동의대학교 신소재공학과) ;
  • 강진기 ;
  • 이해용 (루미지엔테크) ;
  • 이원재 (동의대학교 신소재공학과)
  • Min-Ji Chae (Department of Advanced Materials Engineering, Dong-Eui University) ;
  • Sun-Yeong Seo (Department of Advanced Materials Engineering, Dong-Eui University) ;
  • Hui-Yeon Jang (Department of Advanced Materials Engineering, Dong-Eui University) ;
  • So-Min Shin (Department of Advanced Materials Engineering, Dong-Eui University) ;
  • Dae-Uk Kim (Department of Advanced Materials Engineering, Dong-Eui University) ;
  • Yun-Jin Kim (Department of Advanced Materials Engineering, Dong-Eui University) ;
  • Mi-Seon Park (Department of Advanced Materials Engineering, Dong-Eui University) ;
  • Gwang-Hee Jung (Department of Advanced Materials Engineering, Dong-Eui University) ;
  • Jin-Ki Kang (AXEL) ;
  • Hae-Yong Lee (LumiGNtech Co, Ltd) ;
  • Won-Jae Lee (Department of Advanced Materials Engineering, Dong-Eui University)
  • 투고 : 2024.07.11
  • 심사 : 2024.07.26
  • 발행 : 2024.08.31
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초록

β-Ga2O3는 4.9 eV의 넓은 밴드갭과 8 MV/cm의 높은 항복전압으로 전력 소자 응용 분야에서 많은 관심을 받고 있는 대표적인 UWBG(Ultra-wide Band-gap) 반도체이다. 또한 용액 성장이 가능하기 때문에 SiC, GaN에 비해 성장 속도가 빠르고 생산 비용이 저렴하다는 장점이 있다[1,2]. 본 연구에서는 EFG(Edge-defined Film-fed Growth) 법을 통해 Si 도핑 된 β-Ga2O3 단결정을 성장시키는 데에 성공하였다. 성장 방향과 성장 주 면은 각각 [010] / (001)로 설정하였으며 성장속도는 7~20 mm/h이다. 성장시킨 β-Ga2O3 단결정은 다양한 결정 면 방향(001, 100, ${\bar{2}}01$)과 off-angle(1o, 3o, 4o)에 따라 절단하여 표면 가공을 진행하였고, 가공 후 HVPE(Halide vapor phase epitaxy) 법을 이용해 epi-ready 기판 위에 homoepitaxial 층을 성장시켰다. 가공 후의 샘플과 epi-layer를 성장시킨 샘플을 XRD, AFM, OM, Etching 등의 분석을 통해 결정면과 off-angle에 따른 표면 특성을 비교하였다.

β-Ga2O3 is a representative ultra-wide bandgap (UWBG) semiconductor that has attracted much attention for power device applications due to its wide-bandgap of 4.9 eV and high-breakdown voltage of 8 MV/cm. In addition, because solution growth is possible, it has advantages such as fast growth rate and lower production cost compared to SiC and GaN [1-2]. In this study, we have successfully grown Si-doped 10 mm thick Si-doped β-Ga2O3 single crystals by the EFG (Edge-defined Film-fed Growth) method. The growth direction and growth principal plane were set to [010] / (010), respectively, and the growth speed was 7~20 mm/h. The as-grown β-Ga2O3 single crystal was cut into various crystal planes (001, 100, ${\bar{2}}01$) and off-angles (1o, 3o, 4o), and then surface processed. After processed, the homoepitaxial layer was grown on the epi-ready substrate using the HVPE (Halide vapor phase epitaxy) method. The processed samples and the epi-layer grown samples were analyzed by XRD, AFM, OM, and Etching to compare the surface properties according to the crystal plane and off-angle.

키워드

과제정보

이 연구는 2024년 교육부의 재원으로 한국기초과학지원연구원 국가연구시설장비진흥센터의 지원(No. 2019R1A6C1010045)과 2024년 정부(과학기술정보통신부)의 재원으로 한국연구재단-나노 및 소재기술개발사업의 지원(2021M3H4A3A01061784)과 2024년 정부(산업통상자원부)의 재원으로 한국산업기술진흥원의 지원(P0012451, 2024년 산업혁신인재성장지원사업)을 받아 수행된 연구임.

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