과제정보
이 연구는 2024년 교육부의 재원으로 한국기초과학지원연구원 국가연구시설장비진흥센터의 지원(No. 2019R1A6C1010045)과 2024년 정부(과학기술정보통신부)의 재원으로 한국연구재단-나노 및 소재기술개발사업의 지원(2021M3H4A3A01061784)과 2024년 정부(산업통상자원부)의 재원으로 한국산업기술진흥원의 지원(P0012451, 2024년 산업혁신인재성장지원사업)을 받아 수행된 연구임.
참고문헌
- M. Higashiwaki and G.H. Jessen, "Guest editorial: The dawn of gallium oxide microelectronics", Appl. Phys. Lett. 112 (2018) 060401.
- S. Zhang, X. Lian, Y. Ma, W. Liu, Y. Zhang, Y. Xu and H. Cheng, "Growth and characterization of 2-inch high quality β-Ga2O3 single crystals grown by EFG method", J. Semicond. 39 (2018) 083003.
- J.B. Varley, H. Peelaers, A. Janotti and C.G. Van de Walle, "Hydrogenated cation vacancies in semiconducting oxides: Origin of doping asymmetry", J. Phys.: Condens. Matter 23 (2011) 334212.
- K. Sasaki, A. Kuramata, T. Masui, E. Goto and S. Yamakoshi, "Device-quality β-Ga2O3 epitaxial films fabricated by ozone molecular beam epitaxy", Appl. Phys. Express 5 (2012) 035502.
- A. Kuramata, K. Koshi, S. Watanabe, Y. Yamaoka, T. Masui and S. Yamakoshi, "High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth", Jpn. J. Appl. Phys. 55 (2016) 1202A2.
- H.W. Xue, H. Qiming, G.Z. Jian and S. Long, "An overview of the ultrawide bandgap Ga2O3 semiconductor-based Schottky barrier diode for power electronics application", Nanoscale Research Letters 13 (2018) 1.
- M. Higashiwaki and S. Fujita, editors, Gallium Oxide: Materials Properties, Crystal Growth, and Devices (Springer International Publishing, Cham, 2020).
- P. Vogt and O. Bierwagen, "Reaction kinetics and growth window for plasma-assisted molecular beam epitaxy of Ga2O3: Incorporation of Ga vs. Ga2O desorption", Appl. Phys. Lett. 108 (2016) 072101.
- P. Vogt and O. Bierwagen, "Kinetics versus thermodynamics of the metal incorporation in molecular beam epitaxy of (InxGa1-x)2O3", APL Mater. 4 (2016) 086112.
- K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui and S. Yamakoshi, "Growth temperature dependences of structural and electrical properties of Ga2O3 epitaxial films grown on β-Ga2O3 (010) substrates by molecular beam epitaxy", J. Cryst. Growth 392 (2014) 30.
- G. Wagner, M. Baldini, D. Gogova, M. Schmidbauer, R. Schewski, M. Albrecht, Z. Galazka, D. Klimm and R. Fornari, "Homoepitaxial growth of β-Ga2O3 layers by metal-organic vapor phase epitaxy", Physica Status Solidi (a) 211 (2014) 27.
- X. Du, W. Mi, C. Luan, Z. Li, C. Xia and J. Ma, "Characterization of homoepitaxial β-Ga2O3 films prepared by metal-organic chemical vapor deposition", J. Cryst. Growth 404 (2014) 75.
- M. Orita, H. Ohta, M. Hirano and H. Hosono, "Deep-ultraviolet transparent conductive β-Ga2O3 thin films", Appl. Phys. Lett. 77 (2000) 4166.
- T. Oshima, T. Nakazono, A. Mukai and A. Ohtomo, "Epitaxial growth of γ-Ga2O3 films by mist chemical vapor deposition", J. Cryst. Growth 359 (2012) 60.
- H. Murakami, K. Nomura, K. Goto, K. Sasaki, K. Kawara, Q.T. Thieu, R. Togashi, Y. Kumagai, M. Higashiwaki, A. Kuramata, S. Yamakoshi, B. Monemar and A. Koukitu, "Homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy", Appl. Phys. Express 8 (2014) 015503.
- Y. Oshima, E.G. Villora and K. Shimamura, "Halide vapor phase epitaxy of twin-free α-Ga2O3 on sapphire (0001) substrates", Appl. Phys. Express 8 (2015) 055501.
- Y. Oshima, E.G. Vίllora and K. Shimamura, "Quasi-heteroepitaxial growth of β-Ga2O3 on off-angled sapphire (0001) substrates by halide vapor phase epitaxy", J. Cryst. Growth 410 (2015) 53.
- K. Goto, H. Murakami, A. Kuramata, S. Yamakoshi, M. Higashiwaki and Y. Kumagai, "Effect of substrate orientation on homoepitaxial growth of β-Ga2O3 by halide vapor phase epitaxy", Appl. Phys. Lett. 120 (2022) 102102.
- K. Ogawa, N. Ogawa, R. Kosaka, T. Isshiki, T. Aiso, M. Iyoki, Y.Z. Yao and Y. Ishikawa, "AFM observation of etch-pit shapes on β-Ga2O3 (001) surface formed by molten alkali etching," MSF 1004 (2020) 512.
- S. Sdoeung, K. Sasaki, K. Kawasaki, J. Hirabayashi, A. Kuramata and M. Kasu, "Characterization of dislocation of halide vapor phase epitaxial (001) β-Ga2O3 by ultrahigh sensitive emission microscopy and synchrotron X-ray topography and its influence on Schottky barrier diodes", Jpn. J. Appl. Phys. 62(SF) (2023) SF1001.
-
A.A. Zarichny, P.N. Butenko and M.E. Boiko, "The analysis of the etch pits parameters in the (
${\bar{2}}01$ ) plane of the β-Ga2O3 substrate crystals", Materials Physics and Mechanics 51 (2023) 174. - Y. Liu, Z. Jin, L. Li, N. Xia, H. Zhuang and D. Yang, "Two types of etching pits in (100) β-Ga2O3 single crystals grown by casting method", Micro and Nanostructures 176 (2023) 207541.