반도체공학회 논문지 (Transactions on Semiconductor Engineering)

반도체공학회 (The Institute of Semiconductor Engineers)
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Offset 개선을 위해 Auto Zero Calibration 기법을 적용한 8-bit / 49.98dB-SNDR SAR ADC 설계

ENOB 8-bit / 49.98dB-SNDR SAR ADC with Auto Zero Calibration Technique for Offset Improvement

  • Chae Eun Jung (Department of Electrical and Computer Engineering, Sungkyunkwan University) ;
  • Juwon Oh (Department of Electrical and Computer Engineering, Sungkyunkwan University) ;
  • Young-Gun Pu (Department of Electrical and Computer Engineering, Sungkyunkwan University) ;
  • Kang-Yoon Lee (Department of Electrical and Computer Engineering, Sungkyunkwan University)
  • 투고 : 2024.05.24
  • 심사 : 2024.08.01
  • 발행 : 2024.07.31
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초록

본 논문은 Reference generator 와 Comparator 에서 발생하는 offset 을 최소화하고 정확도를 향상시키기 위해 Auto zero 기술을 활용한 회로를 제안한다. 이에 대한 근거로 Auto zero 사용 전/후를 비교했을 때 약 90% 표준 편차가 줄어드는 결과를 얻을 수 있었다. 제안하는 회로는 55nm CMOS 공정을 사용하였으며, input frequency 는 781.2 Hz, Effective Number of Bits(ENOB) 8.01bit, Signal-to-Noise Distortion Ratio(SNDR)이 49.98dB 을 보여준다.

This paper proposes a circuit utilizing auto zero technology to minimize offset and enhance accuracy in the reference generator and comparator. As evidence, a comparison between pre and post auto zero usage revealed a reduction of approximately 90% in standard deviation. The proposed circuit was implemented using a 55nm CMOS process, with an input frequency of 781.2 Hz. It achieves an Effective Number of Bits (ENOB) of 8.01 bits and a Signal-to-Noise Distortion Ratio (SNDR) of 49.98 dB.

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과제정보

본 연구는 2024 년도 산업통상자원부 및 산업기술평가관리원(KEIT) 연구비 지원에 의한 연구임(20016266)

참고문헌

  1. K. Souri, Y. Chae, and K. A. A. Makinwa, "A CMOS temperature sensor with a voltage-calibrated inaccuracy of ±0.15 ℃ (3σ) from -55 ℃ to 125 ℃," IEEE J. Solid-State Circuits, vol. 48, no. 1, pp. 292-301, Jan. 2013. 
  2. K. Souri, Y. Chae, F. Thus, and K. Makinwa, "12.7 A 0.85V 600 nW all-CMOS temperature sensor with an inaccuracy of ±0.4 ℃ (3σ) from -40 to 125 ℃," in Proc. IEEE Int. Solid-State Circuits Conf. (ISSCC), Feb. 2014, pp. 222-223. 
  3. Y.-S. Lin, D. Sylvester, and D. Blaauw, "An ultra low power 1V, 220 nW temperature sensor for passive wireless applications," in Proc. IEEE Custom Integr. Circuits Conf. (CICC), Sep. 2008, pp. 507-510. 
  4. S. Jeong, Z. Foo, Y. Lee, J.-Y. Sim, D. Blaauw, and D. Sylvester, "A fully-integrated 71 nW CMOS temperature sensor for low power wireless sensor nodes," IEEE J. Solid-State Circuits, vol. 49, no. 8, pp. 1682-1693, Aug. 2014