한국전자통신학회논문지 (The Journal of the Korea institute of electronic communication sciences)

한국전자통신학회 (Korea Institute of Electronic Communication Science)
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공정압력이 GTZO 박막의 구조적, 전기적 및 광학적 특성에 미치는 영향

Effect of Working Pressure on the Structural, Electrical, and Optical Properties of GTZO Thin Films

  • 최병균 (전남대학교 전기 및 반도체공학과) ;
  • 정양희 (전남대학교 전기 및 반도체공학과) ;
  • 강성준 (전남대학교 전기 및 반도체공학과)
  • 투고 : 2023.11.29
  • 심사 : 2024.02.17
  • 발행 : 2024.02.29
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초록

본 연구에서는 고주파 마그네트론 스퍼터링 법으로 공정압력을 1에서 7mTorr 로 변화시켜 가며 GTZO (Ga-Ti-Zn-O)박막을 제작하여, 구조적 특성과 전기적 및 광학적 특성을 조사하였다. XRD측정을 통해 공정압력에 무관하게 모든 GTZO박막이 c-축으로 우선 성장함을 확인할 수 있었고, 1mTorr 에서 제작한 GTZO 박막이 반가폭 0.38˚ 로 가장 우수한 결정성을 나타내었다. 가시광 영역(400~800 nm)에서의 평균 투과도는 공정압력에 상관없이 80% 이상의 값을 나타내었고, 공정압력이 증가함에 따라 캐리어 농도가 감소하고 이로 인해 에너지 밴드갭이 좁아지는 Burstein - Moss 효과도 관찰할 수 있었다. 공정압력 1mTorr 에서 증착한 GTZO박막의 재료 평가 지수는 9.08 × 103 Ω-1·cm-1 로 가장 우수한 값을 나타내었고 이때 비저항과 가시광 영역에서의 평균 투과도는 각각 5.12 × 10-4 Ω·cm 과 80.64 % 이었다.

In this study, GTZO(Ga-Ti-Zn-O) thin films were deposited at various working pressures (1~7mTorr) by RF magnetron sputtering to examine the structural, electrical, and optical properties. All GTZO thin films exhibited c-axis preferential growth regardless of working pressure, the GTZO thin film deposited at 1mTorr showed the most excellent crystallinity having 0.38˚ of FWHM. The average transmittance in the visible light region (400~800nm) showed 80% or more regardless of the working pressure. We could observed the Burstein-Moss effect that carrier concentration decrease with the increase of working pressure and thus the energy band gap is narrowed. Figure of merits of GTZO thin film deposited at 1mTorr showed the highest value of 9.08 × 103 Ω-1·cm-1, in this case resistivity and average transmittance in the visible light region were 5.12 × 10-4 Ω·cm and 80.64%, respectively.

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참고문헌

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