Journal of Power Electronics

The Korean Institute of Power Electronics (전력전자학회)
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Loss and efficiency comparisons of single-phase full-bridge inverters according to switch structures

  • So‑Jeong Kong (Department of Electrical Engineering, Myongji University) ;
  • Young‑Joo Kim (Logistics System Research Team, Korea Railroad Research Institute) ;
  • Jin‑Su Kim (Department of Electrical Engineering, Myongji University) ;
  • Jae‑Hyuck Choi (Department of Electrical Engineering, Myongji University) ;
  • Jun‑Young Lee (Department of Electrical Engineering, Myongji University)
  • Received : 2023.05.23
  • Accepted : 2023.10.23
  • Published : 2024.02.20
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Abstract

The purpose of this study is to analyze the performances of the single-phase full-bridge inverter according to different switch structures and to propose a cost-effective structure that depends on the operating area of the inverter. The five switch structures considered are: (1) insulated-gate bipolar transistor (IGBT) type, (2) resonance type based on IGBTs, (3) SiC FET type, (4) Si FET type, and 5) hybrid type, using both Si FET and IGBTs. According to each switch structure, the consistency of the analytical formula is verified by theoretical loss analyses, prototype experiments, and comparative analyses. Additionally, by comparing the prices and efficiencies of each structure, a suitable structure can be selected depending on the operating area. For the performance comparisons, 3 kW inverters with direct current (DC) input voltages of 400 V and 700 V and an output voltage of 220 Vac/60 Hz are implemented and tested at switching frequencies of 20 kHz and 40 kHz.

Keywords

Acknowledgement

This work was supported by the Technology Innovation funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea) (Grant 20010938) and a grant (RS-2021-KA162618) from the Korea Agency for Infrastructure Technology Advancement, Korea.

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