한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제36권6호
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  • Pages.609-613
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  • 2023
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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분리된 게이트 구조를 갖는 필드 스톱 IGBT의 전기적 특성에 관한 연구

A Study on Electrical Characteristics of Field Stop IGBT with Separated Gate Structure

  • 조형성 (극동대학교 에너지IT학과) ;
  • 이장현 (극동대학교 에너지IT학과) ;
  • 리긍연 (국립대만대학교 해양공학과) ;
  • 강이구 (극동대학교 에너지IT학과)
  • HyeongSeong Jo (Department of Energy IT Engineering, Far East University) ;
  • Jang Hyeon Lee (Department of Energy IT Engineering, Far East University) ;
  • Kung Yen Lee (Department Engineering Science and Ocean Engineering, National Taiwan University) ;
  • Ey Goo Kang (Department of Energy IT Engineering, Far East University)
  • 투고 : 2023.06.24
  • 심사 : 2023.10.13
  • 발행 : 2023.11.01
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초록

In this paper, a 1,200 V Si-based IGBT used in electric vehicles and new energy industries was designed. A field stop IGBT with a separate gate structure, which is the proposed structure, was designed to change trench depth and split gate width variables. Then, the general trench structure and electrical characteristics were compared and analyzed. As a result of conducting the trench depth experiment, it was confirmed that the breakdown voltage was the highest at 6 ㎛, and the on-state voltage drop was the lowest at 3.5 ㎛. In the separate gate width experiment, it was confirmed that the breakdown voltage decreased as the variable increased, and the on-state voltage drop increased. Therefore, it may be seen that it is preferable not to change the width of the separate gate. In addition, experiments show that there is no difference in on-state voltage drop compared to a structure in which a general field stop structure has a separate gate structure. In other words, it is determined that adding a dummy gate with a separate gate structure to the active cell will significantly improve the on-voltage drop characteristics, while confirming that the on-voltage drop does not change, and while having excellent characteristics in terms of breakdown voltage.

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과제정보

본 논문은 한국산업기술진흥원의 산업혁신인재양성사업(P0017308)과 소재부품기술사업(20022501)의 지원에 의하여 수행되었음.

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