과제정보
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIT) (No.NRF-2022R1A4A1028702).
참고문헌
- J. Liu, R. Liu, S. Zhan, Q. Luo, R. Chen, and X. Cheng, IEEE Trans. Electron Devices, 70, 1682 (2023). doi: https://doi.org/10.1109/ted.2023.3241572
- J. Y. Kwon, D. J. Lee, and K. B. Kim, Electron. Mater. Lett., 7, 1 (2011). doi: https://doi.org/10.1007/s13391-011-0301-x
- Y. Zhu, Y. He, S. Jiang, L. Zhu, C. Chen, and Q. Wan, J. Semicond., 42, 031101 (2021). doi: https://doi.org/10.1088/1674-4926/42/3/031101
- K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, Science, 300, 1269 (2003). doi: https://doi.org/10.1126/science.1083212
- S. Knobelspies, B. Bierer, A. Daus, A. Takabayashi, G. A. Salvatore, G. Cantarella, A. O. Perez, J. Wollenstein, S. Palzer, and G. Troster, Sensors, 18, 358 (2018). doi: https://doi.org/10.3390/s18020358
- Q. Z. Chen, C. Y. Shi, M. J. Zhao, P. Gao, W. Y. Wu, D. S. Wuu, R. H. Horng, S. Y. Lien, and W. Z. Zhu, IEEE Electron Device Lett., 44, 448 (2023). doi: https://doi.org/10.1109/led.2023.3239379
- C. H. Wu, S. K. Mohanty, B. W. Huang, K. M. Chang, S. J. Wang, and K. J. Ma, Nanotechnology, 34, 175202 (2023). doi: https://doi.org/10.1088/1361-6528/acb5f9
- Z. Cao, X. Huo, Q. Ma, J. Song, Q. Pan, L. Chen, J. Lai, X. Shan, and J. Gao, Sens. Actuators, B, 385, 133685 (2023). doi: https://doi.org/10.1016/j.snb.2023.133685
- J. Choi, J. Cho, H. Kim, S. Jeong, T. Kim, S. K. Dhungel, Y. Kim, J. K. Song, Y. S. Kim, and D. P. Pham, ECS J. Solid State Sci. Technol., 12, 034001 (2023). doi: https://doi.org/10.1149/2162-8777/acbedd
- C. Liu, H. Zhou, Z. Jiang, and H. Xu, Proc. 2019 IEEE 2nd International Conference on Electronics Technology (ICET) (IEEE, Chengdu, China, 2019) p. 354. doi: https://doi.org/10.1109/ELTECH.2019.8839489
- G. Packard, R. G. Manley, and K. D. Hirschman, ECS Trans., 90, 79 (2019). doi: https://doi.org/10.1149/09001.0079ecst
- S. Lee, J. S. Park, and Y. Hong, J. Korean Phys. Soc., 77, 277 (2020). doi: https://doi.org/10.3938/jkps.77.277
- M. Moreno, A. Ponce, A. Galindo, E. Ortega, A. Morales, J. Flores, R. Ambrosio, A. Torres, L. Hernandez, H. Vazquez-Leal, G. Patriarche, and P.R.I. Cabarrocas, Materials, 14, 6947 (2021). doi: https://doi.org/10.3390/ma14226947
- H. Xu, G. Wan, J. Mai, Z. Jiang, B. Liu, and S. Zhang, Semicond. Sci. Technol., 38, 035006 (2023). doi: https://doi.org/10.1088/1361-6641/acb2e8
- Y. Zhang, J. Li, J. Li, T. Huang, Y. Guan, Y. Zhang, H. Yang, M. Chan, X. Wang, L. Lu, and S. Zhang, IEEE Electron Device Lett., 44, 444 (2023). doi: https://doi.org/10.1109/led.2023.3237747
- T. Anutgan and M. Anutgan, IEEE Trans. Electron Devices, 68, 6182 (2021). doi: https://doi.org/10.1109/ted.2021.3119540
- C. W. Kuo, T. C. Chang, J. J. Chen, K. J. Zhou, and T. M. Tsai, IEEE Trans. Electron Devices, 69, 6789 (2022). doi: https://doi.org/10.1109/ted.2022.3217246
- C. Wang, C. Peng, P. Wen, M, Xu, L. Chen, X. Li, and J. Zhang, IEEE Trans. Electron Devices, 70, 1687 (2023). doi: https://doi.org/10.1109/ted.2023.3244903
- H. M. Ahn, S. H. Moon, Y. H. Kwon, N. J. Seong, K. J. Choi, C. S. Hwang, J. H. Yang, Y. H. Kim, and S. M. Yoon, IEEE Electron Device Lett., 43, 1909 (2022). doi: https://doi.org/10.1109/led.2022.3210162
- S. H. Moon, S. H. Bae, Y. H. Kwon, N. J. Seong, K. J. Choi, and S. M. Yoon, Ceram. Int., 48, 20905 (2022). doi: https://doi.org/10.1016/j.ceramint.2022.04.082
- Y. F. Tu, C. L. Chiang, T. C. Chang, Y. H. Hung, L. C. Sun, C. W. Kuo, H. Y. Tu, H. C. Huang, and C. H. Lien, IEEE Trans. Electron Devices, 69, 3181 (2022). doi: https://doi.org/10.1109/ted.2022.3166745
- S. K. Kim, Y. J. Choi, S. I. Cho, K. S. Cho, and J. Jang, SID Symp. Dig. Tech. Pap., 29, 379 (1998). doi: https://doi.org/10.1889/1.1833771
- J. Park, S. Choi, S. J. Myoung, J. Y. Kim, C. Kim, S. J. Choi, D. M. Kim, J. H. Bae, and D. H. Kim, IEEE Electron Device Lett., 44, 96 (2023). doi: https://doi.org/10.1109/led.2022.3225838
- H. Xie, Ph.D. Mechanism Investigation and Process Development of Nitrogen-Doped Amorphous Oxide Semiconductor Thin Film Transistors, Dissertation Submitted to Shanghai Jiao Tong University, 2018.
- F. M. Hossain, J. Nishii, S. Takagi, A. Ohtomo, T. Fukumura, H. Fujioka, H. Ohno, H. Koinuma, and M. Kawasaki, J. Appl. Phys., 94, 7768 (2003). doi: https://doi.org/10.1063/1.1628834
- H. H. Hsieh, T. Kamiya, K. Nomura, H. Hosono, and C. C. Wu, Appl. Phys. Lett., 92, 133503 (2008). doi: https://doi.org/10.1063/1.2857463
- G. Zhang, Design and Researches on a-IGZO-Based TFT, Telecommunication for the Degree of Master of Engineering, 2016.
- K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature, 432, 488 (2004). doi: https://doi.org/10.1038/nature03090
- A. Sharma, P. G. Bahubalindruni, M. Bharti, and P. Barquinha, Solid-State Electron., 192, 108273 (2022). doi: https://doi.org/10.1016/j.sse.2022.108273
- M. Guo, H. Ou, D. Xie, Q. Zhu, M. Wang, L. Liang, F. Liu, C. Ning, H. Cao, G. Yuan, X. Lu, and C. Liu, Adv. Electron. Mater., 9, 2201184 (2023). doi: https://doi.org/10.1002/aelm.202201184
- H. K. Noh, J. S. Park, and K. J. Chang, J. Appl. Phys., 113, 063712 (2013). doi: https://doi.org/10.1063/1.4792229
- S. J. Park and T. J. Ha, IEEE Electron Device Lett., 44, 642 (2023). doi: https://doi.org/10.1109/led.2023.3243838
- P. C. Lai, C. L. Lin, and J. Kanicki, IEEE Trans. Electron Devices, 66, 436 (2019). doi: https://doi.org/10.1109/ted.2018.2877945
- D. Wang, J. Y. Wan, D. Wang, R. H. Guo, H. M. Zhan, X. Chen, and X. B. Shao, Chin. J. Liq. Cryst. Disp., 36, 1264 (2021). doi: https://doi.org/10.37188/cjlcd.2021-0080
- W. Choi, G. Kim, H. Y. Kim, C. Yoo, J. W. Jeon, B. Park, G. Jeon, S. Jeon, S. Kang, Y. Lee, and C. S. Hwang, ACS Appl. Electron. Mater., 5, 1721 (2023). doi: https://doi.org/10.1021/acsaelm.2c01757
- M. M. Hasan, S. Roy, Mohit, E. Tokumitsu, H. Y. Chu, S. C. Kim, and J. Jang, Appl. Surf. Sci., 611, 155533 (2023). doi: https://doi.org/10.1016/j.apsusc.2022.155533
- L. Xu, J. Guo, C. Sun, Z. Zheng, Y. Xu, S. Huang, K. Han, W. Wei, Z. Guo, X. Gong, Q. Luo, L. Wang, and L. Li, IEEE Electron Device Lett., 44, 412 (2023). doi: https://doi.org/10.1109/led.2022.3233824
- K. Yang, S. H. Kim, H. W. Jeong, D. H. Lee, G. H. Park, Y. Lee, and M. H. Park, Chem. Mater., 35, 2219 (2023). doi: https://doi.org/10.1021/acs.chemmater.2c03379
- S. Knobelspies, A. Daus, G. Cantarella, L. Petti, N. Munzenrieder, G. Troster, and G. A. Salvatore, Adv. Electron. Mater., 2, 1600273 (2016). doi: https://doi.org/10.1002/aelm.201600273
- I. S. Lee, H. Kim, M. K. Park, J. Hwang, R. H. Koo, J. J. Kim, and J. H. Lee, IEEE Electron Device Lett., 44, 325 (2023). doi: https://doi.org/10.1109/LED.2022.3229321
- Y. Jeong, H. Kim, J. Oh, S. Y. Choi, and H. Park, J. Electron. Mater., 52, 3914 (2023). doi: https://doi.org/10.1007/s11664-023-10386-x
- C. H. Choi, T. Kim, M. J. Kim, S. H. Yoon, and J. K. Jeong, IEEE Trans. Electron Devices, 70, 2317 (2023). doi: https://doi.org/10.1109/TED.2023.3261281
- J. Li, Y. Guan, J. Li, Y. Zhang, Y. Zhang, M. Chan, X. Wang, L. Lu, and S. Zhang, Nanotechnology, 34, 265202 (2023). doi: https://doi.org/10.1088/1361-6528/acc742
- Y. Guan, Y. Zhang, J. Li, J. Li, Y. Zhang, Z. Wang, Y. Ding, M. Chan, X. Wang, L. Lu, and S. Zhang, Appl. Surf. Sci., 625, 157177 (2023). doi: https://doi.org/10.1016/j.apsusc.2023.157177
- B. Li, X. H. Gao, W. T. Zhang, T. Y. Wang, and B. C. Kim, Comput. Knowl. Technol., 15, 1009 (2019). doi: https://doi.org/10.14004/j.cnki.ckt.2019.1418
- M. Hu, L. Xu, X. Zhang, H. Hao, S. Zong, H. Chen, Z. Song, S. Luo, and Z. Zhu, Appl. Phys. Lett., 122, 033503 (2023). doi: https://doi.org/10.1063/5.0131595
- Y. Magari, T. Kataoka, W. Yeh, and M. Furuta, Nat. Commun., 13, 1078 (2022). doi: https://doi.org/10.1038/s41467-022-28480-9