한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제36권1호
  • /
  • Pages.56-61
  • /
  • 2023
  • /
  • 1226-7945(pISSN)
  • /
  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지
DOI QR코드

DOI QR Code

교류형 플라즈마 디스플레이에서 단일 유지 파형을 가지는 기입 방전의 특성의 연구

Study on Characteristics of Write Discharge with Single Sustain Waveform in AC Plasma Display Panel

  • 투고 : 2022.10.06
  • 심사 : 2022.10.20
  • 발행 : 2023.01.01
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

The characteristics of write discharge were investigated when the conventional driving method with the unipolar sustain voltages, and the single sustain driving method applying the bipolar sustain voltage were applied in an AC plasma display. In the case of having a single sustain waveform, the strength of the write discharge is weakened compared to the conventional driving method during the address period, because the wall charge inside the panel is more dissipated by the lower scanning voltage. In the driving method with a single sustain waveform, the bias voltage of the other electrodes was changed to improve the write discharge characteristics. As a result, the intensity of the discharge was enhanced by 32% and the delay time was shortened by 60 ㎲.

키워드

과제정보

이 논문은 부경대학교 자율창의학술연구비(2021년)에 의하여 연구되었음.

참고문헌

  1. L. F. Weber, SID Symposium Digest of Technical Papers, 31, 402 (2000). [DOI: https://doi.org/10.1889/1.1832967]
  2. M. Ishii, K. Igarashi, S. Mikoshiba, H. Asai, and S. Sago, SID Symposium Digest of Technical Papers, 30, 162 (1999). [Doi: https://doi.org/10.1889/1.1833985]
  3. J. Y. Yoo, B. K. Min, D. J. Myoung, K. Lim, E. H. You, and M. H. Park, SID Symposium Digest of Technical Papers, 32, 798 (2001). [DOI: https://doi.org/10.1889/1.1831986]
  4. B. G. Cho and H. S. Tae, IEEE Trans. Plasma Sci., 36, 192 (2008). [DOI: https://doi.org/10.1109/TPS.2007.913927]
  5. J. Y. Kim, C. S. Park, H. S. Tae, S. K. Lee, S. S. Park, Y. T. Jeong, and B. G. Cho, Mol. Cryst. Liq. Cryst., 677, 143 (2019). [DOI: https://doi.org/10.1080/15421406.2019.1597521]
  6. K. Yoshikawa, Y. Kanazawa, M. Wakitani, T. Shinoda, and A. Ohtsuka, Japan Display, 92, 605 (1992). [DOI: https://doi.org/10.11485/tvtr.16.83_17]
  7. B. G. Cho, J. Korean Inst. Electr. Electron. Mater. Eng., 25, 1004 (2012). [DOI: http://dx.doi.org/10.4313/JKEM.2012.25.12.1004]
  8. K. Sakita, K. Takayama, K. Awamoto, and Y. Hashimoto, SID Symposium Digest of Technical Papers, 31, 110 (2000). [DOI: http://dx.doi.org/10.1889/1.1832859]
  9. J. Y. Kim, Y. T. Jeong, and B. G. Cho, Mol. Cryst. Liq. Cryst., 735, 101 (2021). [DOI: https://doi.org/10.1080/15421406.2021.1972233]
  10. B. G. Cho, H. S. Tae, K. Ito, N. S. Jung, and K. S. Lee, IEEE Trans. Electron Dev., 53, 1112 (2006). [DOI: https://doi.org/10.1109/TED.2006.872696]
  11. J. Y. Kim, Y. T. Jeong, and B. G. Cho, Mol. Cryst. Liq. Cryst., 735, 111 (2021). [DOI: https://doi.org/10.1080/15421406.2021.1972234]