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The Korean Institute of Surface Engineering (한국표면공학회)
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Review on Atomic Layer Deposition of HfO2-based Ferroelectrics for Semiconductor Devices

반도체 소자용 산화하프늄 기반 강유전체의 원자층 증착법 리뷰

  • Lee, Younghwan (Research Institute of Advanced Materials, Seoul National University) ;
  • Kwon, Taegyu (Department of Materials Science and Engineering, College of Engineering, Seoul National University) ;
  • Park, Min Hyuk (Research Institute of Advanced Materials, Seoul National University)
  • 이영환 (서울대학교 신소재공동연구소) ;
  • 권태규 (서울대학교 재료공학부) ;
  • 박민혁 (서울대학교 신소재공동연구소)
  • Received : 2022.09.30
  • Accepted : 2022.10.28
  • Published : 2022.10.31
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Abstract

Since the first report on ferroelectricity in Si-doped hafnia (HfO2), this emerging ferroelectrics have been considered promising for the next-generation semiconductor devices with their characteristic nonvolatile data storage. The robust ferroelectricity in the sub-10-nm thickness regime has been proven by numerous research groups. However, extending their scalability below the 5 nm thickness with low temperature processes compatible with the back-end-of-line technology. In this review, therefore, the current status, technical issues, and their potential solutions of atomic layer deposition (ALD) of HfO2-based ferroelectrics are comprehensively reviewed. Several technical issues in the physical scaling of the ferroelectric thin films and potential solutions including advanced ALD techniques including discrete feeding ALD, atomic layer etching, and area selective ALD are introduced.

Keywords

Acknowledgement

이 연구는 서울대학교 신임교수 연구정착금으로 지원되는 연구비에 의하여 수행되었음.

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