Progress in Superconductivity and Cryogenics (한국초전도ㆍ저온공학회논문지)

The Korean Society of Superconductivity and Cryogenics (한국초전도저온학회)
권호 표지
DOI QR코드

DOI QR Code

Cryogenic voltage sampling for arbitrary RF signals transmitted through a 2DEG channel

  • Kim, Min-Sik (Department of Physics, Jeonbuk National University) ;
  • Kim, Bum-kyu (Korea Research Institute of Standards and Science) ;
  • Kim, U.J. (Department of Physics, Jeonbuk National University) ;
  • Choi, H.K. (Department of Physics, Jeonbuk National University) ;
  • Kim, Ju-Jin (Department of Physics, Jeonbuk National University) ;
  • Bae, Myung-Ho (Korea Research Institute of Standards and Science)
  • Received : 2022.02.22
  • Accepted : 2022.04.07
  • Published : 2022.06.30
Download PDF
⟨ Previous Next ⟩

Abstract

A lossless transport of an arbitrary waveform in a frequency range of 106-109 Hz through a conduction channel in a cryogenic temperature is of importance for a high-speed operation of quantum device. However, it is hard to use a commercial oscilloscope to directly detect the waveform travelling in a device located in a cryogenic system. Here, we developed a cryogenic voltage sampling technique by using a Schottky barrier gate prepared on a surface of a GaAs/AlGaAs device, which revealed that an incident rectangle waveform can transport through a 1 mm long two-dimensional conduction channel without waveform deformation up to 20 MHz, while further study is needed to increase the detection frequency.

Keywords

Acknowledgement

This work was supported by the Korea Research Institute of Standards and Science (KRISS-2021- GP2021-0001) and the National Research Foundation of Korea (NRF) (Grant Nos. 2020R1F1A1075216, 2021R1A2C3012612, 2022M3E4A1077102 and SRC2016R1A5A1008184).

References

  1. Y. -H. Ahn, C. Hong, Y. -S. Ghee, Y. Chung, Y. -P. Hong, M. -H. Bae, and N. Kim, "Upper frequency limit depending on potential shape in a QD-based single electron pump," Journal of Applied Physics, vol. 122, pp. 194502, 2017. https://doi.org/10.1063/1.5000319
  2. G. Yamahata, S. P. Giblin, M. Kataoka, T. Karasawa, and A. Fujiwara, "Gigahertz single-electron pumping in silicon with an accuracy better than 9.2 parts in 107," Appl. Phys. Lett., vol. 109, pp. 013101, 2016. https://doi.org/10.1063/1.4953872
  3. N. Johnson, J. D. Fletcher, D. A. Humphreys, P. See1, J. P. Griffiths, G. A. C. Jones, I. Farrer, D. A. Ritchie, M. Pepper, T. J. B. M. Janssen1, and M. Kataoka, "Ultrafast voltage sampling using single-electron wavepackets," Appl. Phys. Lett., vol. 110, pp. 102105, 2017. https://doi.org/10.1063/1.4978388
  4. A. Y. Cho, "Morphology of Epitaxial Growth of GaAs by a Molecular Beam Method: The Observation of Surface Structures," Journal of Applied Physics, vol. 41, pp. 2780, 1970. https://doi.org/10.1063/1.1659315
  5. V. Umansky and M. Heiblum, "Molecular Beam Epitaxy: From research to mass production, Chapter 6 MBE growth of high-mobility 2DEG," Elsevier Inc., pp. 121-137, 2012.
  6. M. Seo, Y. -H. Ahn, Y. Oh, Y. Chung, S. Ryu, H. -S. Sim, In-Ho Lee, M. -H. Bae, and N. Kim, "Improvement of electron pump accuracy by a potential-shape-tunable quantum dot pump," Phys. Rev. B, vol. 90, pp. 085307, 2014. https://doi.org/10.1103/physrevb.90.085307
  7. R. A. Bruce and G. R. Piercy, "An improved Au/Ge/Ni Ohmic contact to n-type GaAs," Solid-State Electronics, vol. 30, pp. 7, 1987.
  8. G. S. Marlow, M. B. Das, and L. Tongson, "The characteristics of Au/Ge-based ohmic contacts to n-GaAs including the effects of aging," Solid-State Electronics, vol. 26, pp. 259, 1983. https://doi.org/10.1016/0038-1101(83)90120-X