The Transactions of the Korean Institute of Power Electronics (전력전자학회논문지)

The Korean Institute of Power Electronics (전력전자학회)
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Testbed of Power MOSFET Aging Including the Measurement of On-State Resistance

전력용 MOSFET의 온-상태 저항 측정 및 노화 시험 환경 구축

  • Shin, Joonho (Department of Smart Cities, Chung-Ang University) ;
  • Shin, Jong-Won (School of Energy Systems Engineering, Chung-Ang University)
  • Received : 2021.11.07
  • Accepted : 2022.01.07
  • Published : 2022.06.20
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Abstract

This paper presents setting up a laboratory-scale testbed to estimate the aging of power MOSFET devices and integrated power modules by measuring its on-state voltage and current. Based on the aging mechanisms of the component inside the power module (e.g., bond-wire, solder layer, and semiconductor chip), a system to measure the on-state resistance of device-under-test (DUT) is designed and experimented: a full-bridge circuit applies current stress to DUT, and a temperature chamber controls the ambient temperature of DUT during the aging test. The on-state resistance of SiC MOSFET measured by the proposed testbed was increased by 2.5%-3% after 44-hour of the aging test.

Keywords

Acknowledgement

본 연구는 한국에너지기술연구원의 기본사업(C1-2420)을 재원으로 수행한 연구개발과제의 결과입니다.

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