Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

Study on Improving the Mechanical Stability of 3D NAND Flash Memory String During Electro-Thermal Annealing

3D NAND 플래시메모리 String에 전열어닐링 적용을 가정한 기계적 안정성 분석 및 개선에 관한 연구

  • Kim, Yu-Jin (School of Electronics Engineering, Chungbuk National University) ;
  • Park, Jun-Young (School of Electronics Engineering, Chungbuk National University)
  • Received : 2021.11.06
  • Accepted : 2021.12.21
  • Published : 2022.05.01
Download PDF
⟨ Previous Next ⟩

Abstract

Localized heat can be generated using electrically conductive word-lines built into a 3D NAND flash memory string. The heat anneals the gate dielectric layer and improves the endurance and retention characteristics of memory cells. However, even though the electro-thermal annealing can improve the memory operation, studies to investigate material failures resulting from electro-thermal stress have not been reported yet. In this context, this paper investigated how applying electro-thermal annealing of 3D NAND affected mechanical stability. Hot-spots, which are expected to be mechanically damaged during the electro-thermal annealing, can be determined based on understanding material characteristics such as thermal expansion, thermal conductivity, and electrical conductivity. Finally, several guidelines for improving mechanical stability are provided in terms of bias configuration as well as alternative materials.

Keywords

Acknowledgement

본 연구에서는 이 성과는 정부(과학기술정보통신부)의 재원으로 한국연구재단의 지원을 받아 수행된 연구임(No.2021R1F1A1049456).

References

  1. C. M. Compagnoni, A. Goda, A. S. Spinelli, P. Feeley, A. L. Lacaita, and A. Visconti, Proc. IEEE, 105, 1609 (2017). [DOI: https://doi.org/10.1109/JPROC.2017.2665781]
  2. H. Aochi, Proc. 2009 IEEE International Memory Workshop (IEEE, Monterey, USA, 2009) p. 1. [DOI: https://doi.org/10.1109/imw.2009.5090581]
  3. T. H. Hsu, H. T. Lue, P. Y. Du, W. C. Chen, T. H. Yeh, R. Lo, H. S. Chang, K. C. Wang, and C. Y. Lu, Proc. 2019 IEEE 11th International Memory Workshop (IMW) (IEEE, Monterey, USA, 2019) p. 2330. [DOI: https://doi.org/10.1109/IMW.2019.8739692]
  4. K. S. Lee and J. Y. Park, Electronics, 10, 1395 (2021). [DOI: https://doi.org/10.3390/electronics10121395]
  5. H. T. Lue, P. Y. Du, C. P. Chen, W. C. Chen, C. C. Hsieh, Y. H. Hsiao, Y. H. Shih, and C. Y. Lu, Proc. 2012 International Electron Devices Meeting (IEEE, San Francisco, USA, 2012) pp. 9.1.1-9.1.4 [DOI: https://doi.org/10.1109/IEDM.2012.6479008]
  6. J. W. Han, R. Peterson, D. I. Moon, D. G. Senesky, and M. Meyyappan, IEEE Electron Device Lett., 38, 831 (2017). [DOI: https://doi.org/10.1109/LED.2017.2700326]
  7. J. Y. Park, D. I. Moon, M. L. Seol, C. K. Kim, C. H. Jeon, H. Bae, T. Bang, and Y. K. Choi, IEEE Trans. Electron Devices, 63, 910 (2016). [DOI: https://doi.org/10.1109/TED.2015.2513744]