Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
권호 표지

Gas Flow Rate Dependency of Etching Result: Use of VI Probe for Process Monitoring

가스 유량 변화에 따른 식각 공정 결과: VI Probe 활용 가능성 제안

  • Song, Wan Soo (Department of Electronics Engineering, Myongji University) ;
  • Hong, Sang Jeen (Department of Electronics Engineering, Myongji University)
  • 송완수 (명지대학교 전자공학과) ;
  • 홍상진 (명지대학교 전자공학과)
  • Received : 2021.08.18
  • Accepted : 2021.09.16
  • Published : 2021.09.30
Download PDF
⟨ Previous Next ⟩

Abstract

VI probe, which is one of various in-situ plasma monitoring sensor, is frequently used for in-situ process monitoring in mass production environment. In this paper, we correlated the plasma etch results with VI probe data with the small amount of gas flow rate changes to propose usefulness of the VI probe in real-time process monitoring. Several different sized contact holes were employed for the etch experiment, and the etched profiles were measured by scanning electron microscope (SEM). Although the shape of etched hole did not show satisfactory relationship with VI probe data, the chamber status changed along the incremental/decremental modification of the amount of gas flow was successfully observed in terms of impedance monitoring.

Keywords

Acknowledgement

본 연구는 한국산업기술진흥원 월드클래스300 프로젝트기술개발(G02P10810001102)로 수행된 연구이며, 플라즈마 발생장치에 관한 기술적 도움을 주신 최장규 박사와 명지대학교 반도체공정진단연구소 민우식 박사에게 감사의 말씀을 드립니다.

References

  1. W. Liu, D. Q. Wen, S. X. Zhao, F. Gao, and Y. N. Wang, "Characterization of O2/Ar inductively coupled plasma studied by using a Langmuir probe and global model," Plasma Sources Science and Technology, Vol. 24, No. 2, p. 025035, 2015. https://doi.org/10.1088/0963-0252/24/2/025035
  2. H. C. Wang and H. I. Seo, "Showerhead Surface Temperature Monitoring Method of PE-CVD Equipment," Journal of the Semiconductor & Display Technology, Vol. 19, No. 2, pp. 16-21, 2020.
  3. D. H. Kim and S. J. Hong, "Use of Plasma Information in Machine Learning-based Fault Detection and Classification for Advanced Equipment Control," IEEE Transactions on Semiconductor Manufacturing, Vol. 34, No. 3, pp. 408-419, 2021. https://doi.org/10.1109/TSM.2021.3079211
  4. J. H. Lee, H. K. Park, J. Lee, and S. J. Hong, "Understanding of RF Impedance Matching System Using VI-Probe," Journal of the Semiconductor & Display Technology, Vol. 19, No. 3, pp. 43-48, 2020.
  5. H. Jang, J. Nam, C. K. Kim, and H. Chae, "Real-Time Endpoint Detection of Small Exposed Area Si O 2 Films in Plasma Etching Using Plasma Impedance Monitoring with Modified Principal Component Analysis," Plasma Processes and Polymers, Vol. 10, No .10, pp. 850-856, 2013. https://doi.org/10.1002/ppap.201300030
  6. H. T. Noh, D. I. Kim, and S. S. Han, "Real time endpoint detection in plasma etching using Real-Time Decision Making Algorithm," 2015 China Semiconductor Technology International Conference, pp. 1-3, 2015.
  7. N. Lee, O. Kwon, and C. W. Chung, "Correlation of RF impedance with Ar plasma parameters in semiconductor etch equipment using inductively coupled plasma," AIP Advances, Vol. 11, No. 2, pp. 025027, 2021. https://doi.org/10.1063/6.0000883
  8. D. B. Jang and S. J. Hong, "In-situ monitoring of multiple oxide/nitride dielectric stack PECVD deposition process," Transactions on Electrical and Electronic Materials, Vol. 19, No. 1, pp. 21-26, 2018. https://doi.org/10.1007/s42341-018-0005-0
  9. H. Park, J. E. Choi, D. Kim, and S. J. Hong, "Artificial Immune System for Fault Detection and Classification of Semiconductor Equipment," Electronics, Vol. 10, No. 8, pp. 944, 2021. https://doi.org/10.3390/electronics10080944
  10. J. Kwon, S. Ryu, J. Park, H. Lee, Y. Jang, S. Park, and G. Kim, "Development of Virtual Metrology Using Plasma Information Variables to Predict Si Etch Profile Processed by SF6/O2/Ar Capacitively Coupled Plasma," Materials, Vol. 14. No. 11, pp. 3005, 2021. https://doi.org/10.3390/ma14113005
  11. R. d'Agostino and D. L. Flamm, "Plasma etching of Si and SiO2 in SF6-O2 mixtures," Journal of Applied Physics, Vol. 52, No. 1, pp. 162-167, 1981. https://doi.org/10.1063/1.328468
  12. S. Gomez, R. J. Belen, M. Kiehlbauch, and E. S. Aydil, "Etching of high aspect ratio structures in Si using SF 6/O 2 plasma," Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 22, No. 3, pp. 606-615, 2004. https://doi.org/10.1116/1.1710493