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Institute of Korean Electrical and Electronics Engineers (한국전기전자학회)
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A Study on the Electrical Characteristics according to Growth of Trench SiO2 Inside Super Junction IGBT Pillar

Super Junction IGBT 필러 내부 Trench SiO2성장에 따른 전기적 특성에 관한 연구

  • Received : 2021.05.16
  • Accepted : 2021.06.25
  • Published : 2021.06.30
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Abstract

This paper proposes a structure in which Trench SiO2 is grown inside of Super Junction IGBT P-Pillar. When observing the electric field in 3D, we checked the region where the electric field have not affected inside of the P-Pillar. The pillar region's portion resistance is varied by the breakdown voltage and size of each pillar, which reduces the size by growing SiO2 after trenching has no field effect inside of that. At 4.5kV the same breakdown voltage, it was confirmed that the On-state voltage drop improved by about 58%, 19% compared to Field Stop IGBT and conventional Super Junction IGBT.

Super Junction구조는 항복전압과 온-상태 전압강하의 트레이드-오프 특성을 개선하고자 제안된 구조이다. 본 논문은 Super Junction IGBT P-Pillar 내부 영역에 Trench SiO2를 성장시킨 구조를 제안한다. Super Junction구조에 인가되는 전계를 3D로 관찰 시 P-Pillar 내부에 전계가 인가되지 않는 영역을 확인하였다. Pillar영역의 부분저항은 각 Pillar의 크기와 항복전압에 의해 변동되는데 전계가 인가되지 않는 P-Pillar 내부 영역을 Trench 한 후 SiO2를 성장시켜 P-Pillar의 크기를 감소시킨다. 4.5kV의 동일한 항복전압을 가질 때 온-상태 전압강하 특성이 Field Stop IGBT 대비 약 58%, 기존의 Super Junction IGBT 대비 19% 향상되는 것을 확인하였다.

Keywords

Acknowledgement

This work was supported by the Korea Institute of Energy Technology Evaluation and Planning(KETEP) and the Ministry of Trade, Industry & Energy(MOTIE) of the Republic of Korea (No, 20194010201810, No. 20194010000050).

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