Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
권호 표지
DOI QR코드

DOI QR Code

Gate length scaling behavior and improved frequency characteristics of In0.8Ga0.2As high-electron-mobility transistor, a core device for sensor and communication applications

센서 및 통신 응용 핵심 소재 In0.8Ga0.2As HEMT 소자의 게이트 길이 스케일링 및 주파수 특성 개선 연구

  • Jo, Hyeon-Bhin (School of Electronic and Electrical Engineering, Kyungpook National University) ;
  • Kim, Dae-Hyun (School of Electronic and Electrical Engineering, Kyungpook National University)
  • 조현빈 (경북대학교 전자전기공학부) ;
  • 김대현 (경북대학교 전자전기공학부)
  • Received : 2021.10.19
  • Accepted : 2021.11.23
  • Published : 2021.11.30
Download PDF
⟨ Previous Next ⟩

Abstract

The impact of the gate length (Lg) on the DC and high-frequency characteristics of indium-rich In0.8Ga0.2As channel high-electron mobility transistors (HEMTs) on a 3-inch InP substrate was inverstigated. HEMTs with a source-to-drain spacing (LSD) of 0.8 ㎛ with different values of Lg ranging from 1 ㎛ to 19 nm were fabricated, and their DC and RF responses were measured and analyzed in detail. In addition, a T-shaped gate with a gate stem height as high as 200 nm was utilized to minimize the parasitic gate capacitance during device fabrication. The threshold voltage (VT) roll-off behavior against Lg was observed clearly, and the maximum transconductance (gm_max) improved as Lg scaled down to 19 nm. In particular, the device with an Lg of 19 nm with an LSD of 0.8 mm exhibited an excellent combination of DC and RF characteristics, such as a gm_max of 2.5 mS/㎛, On resistance (RON) of 261 Ω·㎛, current-gain cutoff frequency (fT) of 738 GHz, and maximum oscillation frequency (fmax) of 492 GHz. The results indicate that the reduction of Lg to 19 nm improves the DC and RF characteristics of InGaAs HEMTs, and a possible increase in the parasitic capacitance component, associated with T-shap, remains negligible in the device architecture.

Keywords

Acknowledgement

이 논문은 2018학년도 경북대학교 국립대학육성사업 지원비에 의하여 연구되었음.

References

  1. T. Takahashi, M. Sato, K. Makiyama, T. Hirose, and N. Hara, "InAlAs/InGaAs HEMTs with minimum noise figure of 1.0 dB at 94 GHz", Proc. IEEE 19th Int. Conf. IPRM, pp. 55-58, Matsue, Japan, 2007.
  2. J. M. Hornibrook, J. I. Colless, I. D. C. Lamb, S. J. Pauka, H. Lu, A. C. Gossard, J. D. Watson, G. C. Gardner, S. Fallahi, M. J. Manfra, and D. J. Reilly, "Cryogenic control architecture for large-scale quantum computing", Phys. Rev. Appl., Vol. 3, pp. 024010(1)-024010(9), 2015. https://doi.org/10.1103/physrevapplied.3.024010
  3. K. M. H. Leong, X. Mei, W. H. Yoshida, A. Zamora, J. G. Padilla, B. S. Gorospe, K. Nguyen, and W. R. Deal, "850 GHz receiver and transmitter front-end using InP HEMT", IEEE Trans. THz Sci. Technol., Vol. 7, No. 4, pp. 466-475, 2017. https://doi.org/10.1109/TTHZ.2017.2710632
  4. W. R. Deal, K. Leong, A. Zamora, B. Gorospe, K. Nguyen, and X. B. Mei, "A 660 GHz up-converter for THz communications", Proc. IEEE Compd Semicond. Integr. Circuit Symp. (CSICS), pp. 1-4, Miami, FL, USA, 2017.
  5. A. Tessmann, A. Leuther, S. Wagner, H. Massler, M. Kuri, H. -P. Stulz, M. Zink, M. Riessle, and T. Merkle, "A 300 GHz low-noise amplifier S-MMIC for use in next-generation imaging and communication applications", Proc. IEEE MTT-S Int. Microw. Symp., pp. 760-763, Honololu, Hi, USA, 2017.
  6. E. Y. Chang, C. I. Kuo, H. T. Hsu, C. Y. Chiang, and Y. Miyamoto, "InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications", 2013 Appl. Phys. Express, Vol. 6, pp. 034001(1)-034001(3), 2013.
  7. A. Leuther, S. Koch, A. Tessmann, I. Kallfass, T. Merkle, H. Massler, R. Loesch, M. Schlechtweg, S. Saito, and O. Ambacher, "20 nm metamorphic HEMT with 660 GHz fT," IPRM 2011 - 23rd Inter. Conf. on Indium Phosphide Relat. Mater., pp. 1-4, Berlin, 2011.
  8. X. Mei, W. Yoshida, M. Lange, J. Lee, J. Zhou, P.-H. Liu, K. Leong, A. Zamora, J. Padilla, S. Sarkozy, R. Lai, and W.-R. Deal, "First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process," in IEEE Electron Device Lett., Vol. 36, No. 4, pp. 327-329, 2015. https://doi.org/10.1109/LED.2015.2407193
  9. H. Sugiyama, H. Matsuzaki, H. Yokoyama, and T. Enoki, "High-electron-mobility In0.53Ga0.47As/In0.8Ga0.2As composite-channel modulation-doped structures grown by metalorganic vapor-phase epitaxy", 2010 22nd Inter. Conf. on Indium Phosphide Relat. Mater., pp. 1-4, Kagawa, 2010.
  10. H. B. Jo, D. Y. Yun, J. M. Baek, J. H. Lee, T. W. Kim, D. H. Kim, T. Tsutsumi, H. Sugiyama, and H. Matsuzaki, "Lg = 25 nm InGaAs/InAlAs high-electron mobility transistors with both fT and fmax in excess of 700 GHz", 2019 Appl. Phys. Express, Vol. 12, pp. 054006(1)-054006(4), 2019.