Development of Flexure Applied Bond head for Die to Wafer Hybrid Bonding

Die to Wafer Hybrid Bonding을 위한 Flexure 적용 Bond head 개발

  • Received : 2021.12.08
  • Accepted : 2021.12.16
  • Published : 2021.12.31

Abstract

Die-to-wafer (D2W) hybrid bonding in the multilayer semiconductor manufacturing process is one of wafer direct bonding, and various studies are being conducted around the world. A noteworthy point in the current die-to-wafer process is that a lot of voids occur on the bonding surface of the die during bonding. In this study, as a suggested method for removing voids generated during the D2W hybrid bonding process, a flexible mechanism for implementing convex for die bonding to be applied to the bond head is proposed. In addition, modeling of flexible mechanisms, analysis/design/control/evaluation of static/dynamics properties are performed. The proposed system was controlled by capacitive sensor (lion precision, CPL 290), piezo actuator (P-888,91), and dSpace. This flexure mechanism implemented a working range of 200 ㎛, resolution(3σ) of 7.276nm, Inposition(3σ) of 3.503nm, settling time(2%) of 500.133ms by applying a reverse bridge type mechanism and leaf spring guide, and at the same time realized a maximum step difference of 6 ㎛ between die edge and center. The results of this study are applied to the D2W hybrid bonding process and are expected to bring about an effect of increasing semiconductor yield through void removal. In addition, it is expected that it can be utilized as a system that meets the convex variable amount required for each device by adjusting the elongation amount of the piezo actuator coupled to the flexible mechanism in a precise unit.

Keywords

Acknowledgement

본 연구는 국토교통부/국토교통과학기술진흥원의 지원으로 수행되었습니다. (과제번호 20CTAP-C157468-02).

References

  1. Sungdong Kim & Juhwan Jung. (2018). "Novel Wafer Warpage Measurement Method for 3D Stacked IC", Journal of the Semiconductor & Display Technology, Vol. 17, No.4. (2018)
  2. Lea Di Cioccio, Ionut Radu, Pierric Gueguen, & Mariam Sadaka. (2010). "Direct bonding for wafer level 3D integration", ICICDT-10., 110-113, (2010).
  3. Qin-Yi Tong, Giho Cha, Roman Gafiteanu, & Ulrich Gosele. (1994). "Low Temperature Wafer Direct Bonding", Journal of Microelectromechanical Systems., Vol. 3, No. 1, (1994).
  4. M. Shimbo. K. Furukawa, K. Fukuda, & K. Tanzawa. (1986). "Silicontosilicon direct bonding method", J. Appl. Phys., 60 (8), (1986).
  5. Ran He, Masahisa Fujino, Akira Yamauchi, Yinghui Wang, & Tadatomo Suga. (2016). "Combined Surface Activated Bonding Technique for Low-Temperature Cu/Dielectric Hybrid Bonding", ECS Journal of Solid State Science and Technology., 5 (7) P419-P424, (2016). https://doi.org/10.1149/2.0201607jss
  6. Silke H. Christiansen, Rajendra Singh, & Ulrich Gosele. (2006). "Wafer Direct Bonding: From Advanced Substrate Engineering to Future Applications in Micro/Nanoelectronics", Proceedings of the IEEE., Vol. 94, No. 12, (2006).
  7. A. Jouve, V. Balan, N. Bresson, C. Euvrard-Colnat, F. Fournel, Y. Exbrayat, ... , S. Mermoz. (2017). "1㎛ pitch direct hybrid bonding with <300nm Wafer-to-Wafer overlay accuracy", IEEE., (2017).
  8. Stephane Kuhne & Christofer Hierold. (2011). "Wafer-level packaging and direct interconnection technology based on hybrid bonding and through silicon vias", J. Micromech. Microeng., 21, (2011).
  9. Guilian Gao, Laura Mirkarimi, Thomas Workman, Gill Fountain, Jeremy Theil, Gabe Guevara, ... , Michael Huynh. (2019). "Low Temperature Cu Interconnect with Chip to Wafer Hybrid Bonding", 2019 IEEE 69th Electronic Components and Technology Conference (ECTC)., (2019).
  10. Kuan-Neng Chen, Zheng Xu, & Jian-Qiang Lu. (2011). "Demonstration and Electrical Performance Investigation of Wafer-Level Cu Oxide Hybrid Bonding Schemes", IEEE Electron Device letters., Vol. 32, No. 8, (2011)
  11. Hankyeol Seo, Haesung Park, & Sarah Eunkyung Kim. (2020). "Cu-SiO2 Hybrid Bonding", J. Microelectron. Packag. Soc., 27(1), 17-24 (2020).
  12. Young Hak Cho, Sarah Eunkyung Kim & Sungdong Kim. (2013). "Wafer Level Bonding Technology for 3D Stacked IC", Journal of the Microelectronics & Packaging Society., 20(1) 7-13 (2013).
  13. A. Castex, M. Broekaart, F. Rieutord, K. Landry, & C.Lagahe-Blanchard. (2013). "Mechanism of Edge Bonding Void Formation in Hydrophilic Direct Wafer Bonding", ECS Solid State Letters., 2(6) 47-50 (2013).
  14. Hak-Jun Lee, Hyun-Chang Kim, Hyo-Young Kim & Dae-Gab Gweon. (2013). "Optimal design and experiment of a three-axis out-of-plane nano positioning stage using a new compact bridge-type displacement amplifier", AIP Review of Scientific Instruments., 84,115103 (2013).
  15. Ngoc-Thai Huynh, Shyh-Chour Huang & Thanh-Phong Dao. (2018). "Optimal displacement amplification ratio of bridge -type compliant mechanism flexure hinge using the Taguchi method with grey relational analysis", Springer-Verlag GmbH Germany, part of Springer Nature (2018).