낸드 플래시 메모리와 PSRAM을 이용한 비동기용 불휘발성 메모리 모듈 설계

Design of Asynchronous Non-Volatile Memory Module Using NAND Flash Memory and PSRAM

  • 김태현 (청주대학교 반도체공학과) ;
  • 양오 (청주대학교 반도체공학과) ;
  • 연준상 (우진산전(주))
  • Kim, Tae Hyun (Semiconductor Engineering of Cheongju University) ;
  • Yang, Oh (Semiconductor Engineering of Cheongju University) ;
  • Yeon, Jun Sang (WOOJIN Industrial System Co. Ltd.)
  • 투고 : 2020.09.17
  • 심사 : 2020.09.23
  • 발행 : 2020.09.30

초록

In this paper, the design method of asynchronous nonvolatile memory module that can efficiently process and store large amounts of data without loss when the power turned off is proposed and implemented. PSRAM, which takes advantage of DRAM and SRAM, was used for data processing, and NAND flash memory was used for data storage and backup. The problem of a lot of signal interference due to the characteristics of memory devices was solved through PCB design using high-density integration technology. In addition, a boost circuit using the super capacitor of 0.47F was designed to supply sufficient power to the system during the time to back up data when the power is off. As a result, an asynchronous nonvolatile memory module was designed and implemented that guarantees reliability and stability and can semi-permanently store data for about 10 years. The proposed method solved the problem of frequent data loss in industrial sites and presented the possibility of commercialization by providing convenience to users and managers.

키워드

참고문헌

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