나노 MOSFETs의 게이트 누설 전류 노이즈 모델링

Noise Modeling of Gate Leakage Current in Nanoscale MOSFETs

  • 이종환 (상명대학교 시스템반도체공학과)
  • Lee, Jonghwan (Department of System Semiconductor Engineering, Sangmyung University)
  • 투고 : 2020.09.01
  • 심사 : 2020.09.11
  • 발행 : 2020.09.30

초록

The physics-based compact gate leakage current noise models in nanoscale MOSFETs are developed in such a way that the models incorporate important physical effects and are suitable for circuit simulators, including QM (quantum-mechanical) effects. An emphasis on the trap-related parameters of noise models is laid to make the models adaptable to the variations in different process technologies and to make its parameters easily extractable from measured data. With the help of an accurate and generally applicable compact noise models, the compact noise models are successfully implemented into BSIM (Berkeley Short-channel IGFET Model) format. It is shown that the noise models have good agreement with measurements over the frequency, gate-source and drain-source bias ranges.

키워드

참고문헌

  1. Joardar K., Gullapalli K. K., McAndre C. C., Burnham M. E., and Wild A., "An Improved MOSFET Model for Circuit Simulation," IEEE Transactions on Electron Devices, Vol. 45, pp. 134-148, 1998.
  2. Chauhan Y. S., Karim M. A., Venugopalan S., Agarwal H., "BSIM6.0 MOSFET Compact Model," Technical Manual, 2013.
  3. van Langevelde R., "MOS Model 11-Level 1100," Philips Electronics N.V., 2001
  4. Enz. C. C., "MOS Transistor Modeling Dedicated to Low-Current and Low-Voltage Analog Circuit Design and Simulation," Presented at 6th Brazilian School of Microelectronics, 1996
  5. Boothroyd A. R., Tarasewicz S. W., and Slaby C., "MISNAN - A Physically Based Continuous MOSFET Model for CAD Applications," IEEE Transactions on Electron Devices, Vol.10, pp.1512-1529, 1991
  6. Lee J. H. and Hong D. K, "Charge-Based Quantum Correction Noise Model in Nanoscale MOSFET," Journal of Semiconductor Technology and Science," Vol. 19, pp.50-62, 2019 https://doi.org/10.5573/JSTS.2019.19.1.050
  7. Deen M. J., Chen C. H., Asgaran S., Rezvani G. A., Tao J., and Kiyot Y., "High-Frequency Noise of Modern MOSFETs: Compact Modeling and Measurement Issues," IEEE Transactions on Electron Devices, Vol. 53, pp.2062-2081, 2006 https://doi.org/10.1109/TED.2006.880370
  8. Lee J. H., "Noise model of Gate-Leakage Current in Ultrathin Oxide MOSFETs," IEEE Transactions on Electron Devices, Vol. 50, pp.2499-2506, 2003 https://doi.org/10.1109/TED.2003.819254
  9. Lee J. H., Bosman G., Green K. R., and Ladwig D., "Model and Analysis of Gate Leakage Current in Ultrathin Nitrided Oxide MOSFETs," IEEE Transactions on Electron Devices, Vol. 49, pp.1232-1241, 2002 https://doi.org/10.1109/TED.2002.1013281
  10. Cao K. M., Lee W. C., Liu W., Jin X., Su P., Fung S. K. H., An J. X., Yu B., and Hu C., "BSIM4 Gate Leakage Model Including Source-Drain Partition," IEDM Technical Digests, pp.815-818, 2000.