한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제33권1호
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  • Pages.78-82
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  • 2020
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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높은 항복전압(>1,000 V)을 가지는 Circular β-Ga2O3 MOSFETs의 특성

Characteristics of Circular β-Ga2O3 MOSFETs with High Breakdown Voltage (>1,000 V)

  • 조규준 (한국전자통신연구원 RF/전력부품연구실) ;
  • 문재경 (한국전자통신연구원 RF/전력부품연구실) ;
  • 장우진 (한국전자통신연구원 RF/전력부품연구실) ;
  • 정현욱 (한국전자통신연구원 RF/전력부품연구실)
  • Cho, Kyu Jun (RF/Power Components Research Group, Electronics and Telecommunications Research Institute) ;
  • Mun, Jae-Kyong (RF/Power Components Research Group, Electronics and Telecommunications Research Institute) ;
  • Chang, Woojin (RF/Power Components Research Group, Electronics and Telecommunications Research Institute) ;
  • Jung, Hyun-Wook (RF/Power Components Research Group, Electronics and Telecommunications Research Institute)
  • 투고 : 2019.10.31
  • 심사 : 2019.12.04
  • 발행 : 2020.01.01
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초록

In this study, MOSFETs fabricated on Si-doped, MBE-grown β-Ga2O3 are demonstrated. A Si-doped Ga2O3 epitaxial layer was grown on a Fe-doped, semi-insulating 1.5 cm × 1 cm Ga2O3 substrate using molecular beam epitaxy (MBE). The fabricated devices are circular type MOSFETs with a gate length of 3 ㎛, a source-drain spacing of 20 ㎛, and a gate width of 523 ㎛. The device exhibited a good pinch-off characteristic, a high on-off drain current ratio of approximately 2.7×109, and a high breakdown voltage of 1,080 V, which demonstrates the potential of Ga2O3 for power device applications including electric vehicles, railways, and renewable energy.

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참고문헌

  1. K. Shimamura, E. G. Villora, K. Domen, K. Yui, K. Aoki, and N. Ichinose, Jpn. J. Appl. Phys., 44, L7 (2005). [DOI: https://doi.org/10.1143/jjap.44.l7]
  2. M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, and S. Yamakoshi, Appl. Phys. Lett., 100, 013504 (2012). [DOI: https://doi.org/10.1063/1.3674287]
  3. M. Higashiwaki, A. Kuramata, H. Murakami, and Y. Kumagai, J. Phys. D: Appl. Phys., 50, 333002 (2017). [DOI: https://doi.org/10.1088/1361-6463/aa7aff]
  4. J. K. Mun, K. Cho, W. Chang, H. Lee, S. Bae, J. Kim, and H. Sung, J. Korean Inst. Electr. Electron. Mater. Eng., 32, 201 (2019). [DOI: https://doi.org/10.4313/JKEM.2019.32.3.201]
  5. J. K. Mun, K. J. Cho, J. W. Do, H. S. Lee, S. B. Bae, and W. J. Chang, Proc. Journal of the Korean Institute of Electrical and Electronic Material Engineers Annual Summer Conference 2018 (CDM THE BIG, Goseong-Gun, Korea, 2018) p. 35.
  6. J. K. Mun, K. J. Cho, W. J. Chang, and H. Jung, Proc. Journal of the Korean Institute of Electrical and Electronic Material Engineers Annual Summer Conference 2019 (CDM THE BIG, Heongsung-Gun, Korea, 2019) p. 31.
  7. B. J. Baliga, IEEE Electron Device Lett., 10, 455 (1989). [DOI: https://doi.org/10.1109/55.43098]
  8. M. Baldini, Z. Galazka, and G. Wagner, Mater. Sci. Semicond. Process., 78, 132 (2018). [DOI: https://doi.org/10.1016/j.mssp.2017.10.040]
  9. A. Y. Polyakov, N. B. Smirnov, I. V. Schemerov, A. V. Chernykh, E. B. Yakimov, A. I. Kochkova, A. N. Tereshchenko, and S. J. Pearton, ECS. J. Solid State Sci. Technol., 8, Q3091 (2019). [DOI: https://doi.org/10.1149/2.0171907jss]
  10. A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, S. J. Pearton, F. Ren, A. V. Chernykh, and A. I. Kochkova, Appl. Phys. Lett., 113, 142102 (2018). [DOI: https://doi.org/10.1063/1.5051986]
  11. H. Yu, M. Schaekers, T. Schram, N. Collaert, K. D. Meyer, N. Horiguchi, A. Thean, and K. Barla, IEEE Electron Device Lett., 35, 957 (2014). [DOI: https://doi.org/10.1109/led.2014.2340821]
  12. K. J. Cho, H. Jung, W. J. Chang, and J. K. Mun, Proc. Journal of the Korean Institute of Electrical and Electronic Material Engineers Annual Summer Conference 2019 (KIEEME, Heongsung-Gun, Korea, 2019) p. 37.
  13. S. Jakschik, U. Schroeder, T. Hecht, M. Gutsche, H. Seidl, and J. W. Bartha, Thin Solid Films, 425, 216 (2013). [DOI:https://doi.org/10.1016/s0040-6090(02)01262-2]
  14. J. E. Hogan, S. W. Kaun, E. Ahmadi, Y. Oshima, and J. S. Speck, Semicond. Sci. Technol., 31, 065006 (2016). [DOI:https://doi.org/10.1088/0268-1242/31/6/065006]
  15. L. Zhang, A. Verma, H. G. Xing, and D. Jena, Jpn. J. Appl. Phys., 56, 030304 (2017). [DOI: https://doi.org/10.7567/jjap.56.030304]
  16. J. Yang, S. Ahn, F. Ren, S. Pearton, R. Khanna, K. Bevlin, D. Geerpuram, and A. Kuramata, J. Vac. Sci. Technol., B, 35, 031205 (2017). [DOI: https://doi.org/10.1116/1.4982714]
  17. H. Jung, K. J. Cho, W. J. Chang, and J. K. Mun, Proc. Journal of the Korean Institute of Electrical and Electronic Material Engineers Annual Summer Conference 2019 (KIEEME, Heongsung-Gun, Korea, 2019) p. 61.