Journal of IKEEE (전기전자학회논문지)

Institute of Korean Electrical and Electronics Engineers (한국전기전자학회)
권호 표지
DOI QR코드

DOI QR Code

A Study on SCR-based ESD Protection Circuit with High Holding Voltage and All-Direction Characteristics

높은 Holding Voltage 및 All-Direction 특성을 갖는 SCR 기반의 ESD 보호회로에 관한 연구

  • Jin, Seung-Hoo (Dept. of Electronics Engineering, Dankook University) ;
  • Do, Kyoung-Il (Dept. of Electronics Engineering, Dankook University) ;
  • Woo, Je-Wook (Dept. of Electronics Engineering, Dankook University) ;
  • Koo, Yong-Seo (Dept. of Electronics Engineering, Dankook University)
  • Received : 2020.12.04
  • Accepted : 2020.12.29
  • Published : 2020.12.31
Download PDF
⟨ Previous Next ⟩

Abstract

In this paper, we propose a new ESD protection circuit with improved electrical characteristics through structural changes of the existing one-way SCR. The proposed ESD protection circuit has high holding voltage characteristics due to the inserted N+ floating and P+ floating regions, and thus the latch-up immunity characteristics are improved. In addition, structural change enables ESD discharge in four types of Zapping mode (PD, PS, ND, NS), and has superior area efficiency than unidirectional SCR. In addition, the P+ floating and N+ floating lengths corresponding to the base length of the parasitic bipolar transistor, and the distance between P+ floating and N+ floating were designated as design variables, and the high holding voltage was verified through Synopsys' TCAD Simulator.

본 논문에서는 기존 단방향 SCR의 구조적인 변경을 통해 향상된 전기적 특성을 갖는 새로운 ESD 보호회로를 제안한다. 제안된 ESD 보호회로는 삽입 된 N+ Floating 및 P+ Floating 영역으로 인해 높은 Holding Voltage 특성을 가져 Latch-up 면역특성이 향상되었다. 또한 구조적인 변경으로 모든 4가지 유형(PD, PS, ND, NS)의 Zapping Mode에서 ESD 방전이 가능하므로 단방향 SCR보다 우수한 면적효율을 가진다. 그리고 기생 바이폴라 트랜지스터의 베이스 길이에 해당하는 P+ floating, N+ floating 길이와 P+ floating과 N+ floating 사이의 거리를 설계변수로 지정하였으며, 높은 Holding Voltage를 갖는 것을 Synopsys 사의 TCAD Simulator를 통해 검증하였다.

Keywords

Acknowledgement

The EDA tool was supported by the IC Design Education Center(IDEC), Korea. This work was supported by the National Research Foundation of Korea(NRF) grant funded by the Korea government Ministry of Education (No. 2018R1D1A1B07049047).

References

  1. Hyun-Young Kim, "A Study on the Electrical Characteristic of SCR-based Dual-Directional ESD Protection Circuit According to Change of Design Parameters" j.inst.Korean.electr.electron.eng, Vol.19, No.2, pp.265-270. 2015. DOI: 10.7471/ikeee.2015.19.2.265
  2. C. Russ, K. Bock, M. Rasras, I. D. Wolf, G.Groeseneken, and H. E. Maes, "Non-uniform triggering of gg-nMOSs investigated by combined emission microcopy and transmission line pulsing," in Proc. EOS/ESD Symp., 1998.
  3. J. Y. Lee "Analysis of SCR, MVSCR, LVTSCR With I-V Characteristic and Turn-On-Time," j.inst.Korean.electr.electron.eng, vol.20, no.3, pp. 295-398, 2016. DOI: 10.7471/ikeee.2016.20.3.295
  4. O. Quittard, Z. Mrcarica, F. Blanc, G. Notermans, T. Smedes, and H.van Zwol, "ESD protection for high-voltage CMOS technologies," EOS/ESD Symp, pp.77-86, 2006.
  5. F. Du, F. Hou, Z. Liu, J. Liu, J. J. Liou, "Bidirectional silicon-controlled rectifier for advanced ESD protection applications," Electronics Letters, vol.55, no.2, pp.112-114, 2019. DOI: 10.1049/el.2018.6686
  6. K. I. Do, B. S. Lee and Y. S. Koo, "A New Dual-Direction SCR with High Holding Voltage and Low Dynamic Resistance for 5V Application," IEEE Journal of the Electron Device Society, vol.7, pp.601-605, 2019. DOI: 10.1109/JEDS.2019.2916399
  7. K. I. Do, B. B. Song, Y. S. Koo, "A Novel Dual-Directional SCR Structure with High Holding Voltage for 12-V Applications in 0.13-um BCD Process," IEEE Transactions on Electron Devices, vol.67, no.11, pp.5020-5027, 2020. DOI: 10.1109/JEDS.2020.2999108