한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제32권6호
  • /
  • Pages.448-453
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  • 2019
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  • 1226-7945(pISSN)
  • /
  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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자기정렬구조를 갖는 칼코겐화물 상변화 메모리 소자의 전기적 특성 및 온도 분포

Electrical Characteristics of and Temperature Distribution in Chalcogenide Phase Change Memory Devices Having a Self-Aligned Structure

  • Yoon, Hye Ryeon (Department of Materials Science and Engineering, Hanbat National University) ;
  • Park, Young Sam (Electronics and Telecommunications Research Institute (ETRI)) ;
  • Lee, Seung-Yun (Department of Materials Science and Engineering, Hanbat National University)
  • 투고 : 2019.08.07
  • 심사 : 2019.09.11
  • 발행 : 2019.11.01
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초록

This work reports the electrical characteristics of and temperature distribution in chalcogenide phase change memory (PCM) devices that have a self-aligned structure. GST (Ge-Sb-Te) chalcogenide alloy films were formed in a self-aligned manner by interdiffusion between sputter-deposited Ge and $Sb_2Te_3$ films during thermal annealing. A transmission electron microscopy-energy dispersive X-ray spectroscopy (TEM-EDS) analysis demonstrated that the local composition of the GST alloy differed significantly and that a $Ge_2Sb_2Te_5$ intermediate layer was formed near the $Ge/Sb_2Te_3$ interface. The programming current and threshold switching voltage of the PCM device were much smaller than those of a control device; this implies that a phase transition occurred only in the $Ge_2Sb_2Te_5$ intermediate layer and not in the entire thickness of the GST alloy. It was confirmed by computer simulation, that the localized phase transition and heat loss suppression of the GST alloy promoted a temperature rise in the PCM device.

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참고문헌

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