Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Plasma-Enhanced Atomic-Layer-Deposited SiO2 and SiON Thin Films at Low Temperature (< 300℃) using ICP Type Remote Plasma for 3-Dimensional Electronic Devices

3차원 소자 제작을 위한 ICP Type Remote PEALD를 이용한 저온(< 300℃) SiO2 및 SiON 박막 공정

  • Kim, Dae Hyun (Department of Advanced Materials Engineering, Hanyang University) ;
  • Park, Tea Joo (Department of Advanced Materials Engineering, Hanyang University)
  • 김대현 (한양대학교 첨단소재공학과) ;
  • 박태주 (한양대학교 첨단소재공학과)
  • Received : 2019.06.22
  • Accepted : 2019.06.25
  • Published : 2019.06.30
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Abstract

Direct plasma-enhanced atomic layer deposition (PEALD) are widely used for $SiO_2$ and SiON thin film process in current semiconductor industry. However, this exhibits poor step coverage for three-dimensional device structure due directionality of plasma species as well as plasma damage on the substrate. In this study, to overcome this issue, low temperature (< $300^{\circ}C$) $SiO_2$ and SiON thin film processes were studied using inductively coupled plasma (ICP) type remote PEALD with various reactant gases such as $O_2$, $H_2O$, $N_2$ and $NH_3$. It was confirmed that the interfacial properties such as fixed charge density and charge trapping behavior of thin films were considerably improved by hydrogen species in $H_2O$ and $NH_3$ plasma compared to the films grown with $O_2$ and $N_2$ plasma. Furthermore, the leakage current density of the thin films was suppressed for same reason.

Keywords

References

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