Magnetoresistance Characteristics due to the Schottky Contact of Zinc Tin Oixide Thin Films

ZTO 박막의 쇼키접합에 기인하는 자기저항특성

  • Li, XiangJiang (Cheongju University, Electronic Engineering) ;
  • Oh, Teresa (Cheongju University, Semiconductor Engineering)
  • 이향강 (청주대학교 일반대학원 전자공학과) ;
  • 오데레사 (청주대학교 일반대학원 반도체공학과)
  • Received : 2019.12.21
  • Accepted : 2019.12.27
  • Published : 2019.12.31

Abstract

The effect of surface plasmon on ZTO thin films was investigated. The phenomenon of depletion occurring in the interface of the ZTO thin film created a potential barrier and the dielectric layer of the depletion formed a non-mass particle called plasmon. ZTO thin film represents n-type semiconductor features, and surface current by plasma has been able to obtain the effect of improving electrical efficiency as a result of high current at positive voltage and low current at negative voltage. It can be seen that the reduction of electric charge due to recombination of electronic hole pairs by heat treatment of compound semiconductors induces higher surface current in semiconductor devices.

Keywords

References

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