• Transactions of the Korean Society of Automotive Engineers
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• v.16 no.5
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• pp.113-118
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• 2008

We have developed an integrated giant magneto resistance using not only circuit but also integrating technique with semiconductor for automobile application. It has four elements used for giant magneto resistance sensor. Ni-Fe/Cu multi layers were prepared on a glass substrate by magnetron sputtering. The dependence of magneto resistance on the thickness of the Ni-Fe and Cu layers was investigated. The MR ratio showed a saturated a peak at Cu layer $10{\AA}$, Ni-Fe layer $50{\AA}$, where the MR ratio is about 8.7% at room temperature. By means of Ni-Fe multi film and specific integrating technique, these new giant magneto resistance sensor showed excellent resistance characteristics.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.8
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• pp.105-113
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• 2004

MRAM uses magneto-resistance material as a storage element, which stores cell data as a polarization of spin in a free magnetic layer. This magneto-resistance material has hysteresis, asteroid curve at the thermal variation, and R-V characteristics for switching the data. Therefore, a macro-model which can reproduce these characteristics is required for MRAM simulation. We propose a macro-model of TMR (Tunneling Magneto Resistance) that can reproduce all of these characteristics on HSPICE. Also we propose a novel sensing scheme, which generates reference resistance having the medium value, ( $R_{H}$+ $R_{L}$)/2, for a wide range of applied voltage and present simulation results based on the HSPICE macro-model of MTJ that we have developed.d.d.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.163-163
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• 2000

In this research, we used the ion irradiation technique which has an advantae in improving intentionally the properties of surface and interface in a non-equilibrium, instead of the conventional annealing method which has been known to improve the material properties in the equilibrium stat. Cu/Co multilayered films were prepared on SiN4/SiO2/Si substrates by the electron-beam evaporation for the Co layers and the thermal evaporation for the Cu layers in a high vacuum. The ion irradiation with a 80keV Ar+ was carried out at various ion doses in a high vacuum. Hysteresis loops of the films were investigated by magneto-optical polar Kerr spectroscopy at various experimental conditions. The change of atomic structure of the films before and after the ion irradiation was studied by glancing angle x-ray diffraction, and the intermixing between Co and Cu sublayers was confirmed by Rutherford backscattering spectroscopy. The surface roughness and magneto-resistance were measured by atomic force microscopy and with a four-point probe system, respectively. During the magneto-resistance measurement, we changed temperature and the direction of magnetization. From the results of experiments, we found that the change at the interfaces of the Cu/Co multilayered film induced by ion irradiation cause the change of magnetic properties. According to the change in hysteresis loop, the surface inplane component of magnetic easy axis was isotropic before the ion irradiation, but became anisotropic upon irradiation. It was confirmed that this change influences the axial behavior of magneto-resistance. Especially, the magneto-resistance varied in accordance with an external magnetic field and the direction of current, which means that magneto-resistance also shows the uniaxial behavior.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.3
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• pp.197-204
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• 2002

DRAM, SRAM, and FLASH memory are three major memory devices currently used in most electronic applications. But, they have very distinct attributes, therefore, each memory could be used only for limited applications. MRAM (Magneto-resistive Random Access Memory) is a promising candidate for a universal memory that meets all application needs with non-volatile, fast operational speed, and low power consumption. The simplest architecture of MRAM cell is a series of MTJ (Magnetic Tunnel Junction) as a data storage part and MOS transistor as a data selection part. To be a commercially competitive memory device, scalability is an important factor as well. This paper is testing the actual electrical parameters and the scaling factors to limit MRAM technology in the semiconductor based memory device by an actual integration of MRAM core cell. Electrical tuning of MOS/MTJ, and control of resistance are important factors for data sensing, and control of magnetic switching for data writing.

• Journal of Magnetics
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• v.21 no.4
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• pp.491-495
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• 2016

We developed an embedded Object-Oriented Micromagnetic Frame (OOMMF) script schemes for more flexible simulations for complex and dynamic mircomagnetic behaviors. The OOMMF can be called from any kind of softwares by system calls, and we can interact with OOMMF by updating the input files for next step from the output files of the previous step of OOMMF. In our scheme, we set initial inputs for OOMMF simulation first, and run OOMMF for ${\Delta}t$ by system calls from any kind of control programs. After executing the OOMMF during ${\Delta}t$, we can obtain magnetization configuration file, and we adjust input parameters, and call OOMMF again for another ${\Delta}t$ running. We showed one example by using scripting embedded OOMMF scheme, tunneling magneto-resistance dependent switching time. We showed the simulation of tunneling magneto-resistance dependent switching process with non-uniform current density using the proposed framework as an example.

• Journal of the Korean Magnetics Society
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• v.18 no.4
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• pp.154-158
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• 2008

Magnetite($Fe_3O_4$) is currently one of key materials for applications in magnetic storage and many bioinspired applications because bulk $Fe_3O_4$ has a high Curie temperature($Tc={\sim}850K$) and nearly full spin polarization at room temperature(RT). In this work, $Fe_3O_4$ nanoparticles with different sizes of 12 to 15 nm were prepared in a well-controlled manner by a nonhydrolytic synthetic method. Here, we report the significant intergrain magneto-resistance(MR) of ${\sim}2%$ at RT in $Fe_3O_4$ nanoparticle pellets. The tunneling conductance was also investigated based on the Brinkman model, as well. Our results show clearly that the surface or interfacial property of the particles plays a crucial role in the MR effect.

• Journal of Power Electronics
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• v.14 no.6
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• pp.1254-1262
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• 2014

Magneto-electric encoders have been widely used in industry and military applications because of their good shock resistance, small volume, and convenient data processing. However, the characteristics of a magneto-electric encoder's signal generator and hall sensor changes minimally with temperature variation. These changes cause an angle drift. The main purpose of this study is to construct the compensation system of a neural network and constantly update weight coefficients of temperature correction by finite iteration calculation so that the angle value modified can approach the angle value at the target temperature. This approach is used in adaptive correction of the angle value.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2001.11b
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• pp.1144-1149
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• 2001

In this paper, a sliding mode controller of a fluid engine mount using MR (Magneto-Rheological) fluid was discussed When the MR fluid is applied to a fluid mount, resistance of MR fluid can be controlled by electro-magnetic valve installed in the inertia track. Since the rheological property of the MR fluid shows a function of shear rate, the damping characteristics of the mount will be change according to the frequency. Changing an applied magnetic field to the valve changes the property of the mount, such as the resistance of the MR fluid, the notch and the resonant frequencies due to the fluid passing, quantity of the fluid passing, the effective piston area of the volumetric damping and stiffness. Therefore, the fluid mount using MR fluid can be regarded as a variable structure system The sliding mode control known well as a particular type of variable structure control was introduced in this study. The sliding mode control, which has inherent robustness, is also expected to improve the control performance in the engine mount The sliding mode controller for the mount formatted by taking into account the response property with a time constant to MR fluid and the variable mount property. The motion equations of the fluid mount are derived from Newton's law of motion and used in numerical simulation. Numerical simulations illustrate the effectiveness of the sliding mode controller.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.120-120
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• 2002

In past years, theoretical controversy involving a realistic and physical mechanism that leads to large magnetic entropy change as a large magneto-caloric effect in colossal magneto-resistance (CMR) materials had been left as an open question. Thus it is desirable to clarify this problem. (omitted)

• Electrical & Electronic Materials
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• v.10 no.10
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• pp.1016-1021
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• 1997

Magneto resistance properties in spin-valve sandwiches with various thickness of nanmagnetic layer in contact with the ferromagnetic NiFe film were investigated. The NiFe layer in contact with the NiO film was pinned by strongly exchange-biased coupling and the free NiFe layer at the film surface induced a sharp change in the magnetoresistance at -5~15Oe due to small coercivity. The NiO/NiFe/Cu/NiFe film showed a magnetoresistance ratio in the range of 2.3~2.9% and a field sensitivity above 2.2%/Oe with various of nonmagnetic layer. The NiO/NiFe/Cu/NiFe film of the field sensitivity above 2.2%/Oe suggests stang possibility of magnetic sensor matter.