전자통신동향분석 (Electronics and Telecommunications Trends)

한국전자통신연구원 (Electronics and Telecommunications Research Institute)
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전자소자 기반 테라헤르츠 반도체 기술 동향

Trends in Terahertz Semiconductor based on Electron Devices

  • 발행 : 2018.12.01
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초록

Traditionally, many researchers have conducted research on terahertz technology utilizing optical devices such as lasers. However, nanometer-scale electronic devices using silicon or III-V compound semiconductors have received significant attention regarding the development of a terahertz system owing to the rapid scaling down of devices. This enables an operating frequency of up to approximately 0.5 THz for silicon, and approximately 1 THz for III-V devices. This article reviews the recent trends of terahertz monolithic integrated circuits based on several electronic devices such as CMOS, SiGe BiCMOS, and InP HBT/HEMT, and a particular quantum device, an RTD.

키워드

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(그림 1) 테라헤르츠 시스템의 다양한 응용

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(그림 2) 테라헤르츠 신호원 구현 방법: (a) VCO에 의한 하모닉 성분 추출방법, (b) 체배기에 의한 신호원 생성

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(그림 3) RTD 원리 및 RTD oscillator 구조: (a) RTD 동작원리 (b) RTD 발진기 구조

<표 1> 단일 VCO 기반의 테라헤르츠 소스원 성능 비교

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참고문헌

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