전자통신동향분석 (Electronics and Telecommunications Trends)

한국전자통신연구원 (Electronics and Telecommunications Research Institute)
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고온 동작용 SiC CMOS 소자/공정 및 집적회로 기술동향

Technology Trend of SiC CMOS Device/Process and Integrated Circuit for Extreme High-Temperature Applications

  • 발행 : 2018.12.01
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초록

Several industrial applications such as space exploration, aerospace, automotive, the downhole oil and gas industry, and geothermal power plants require specific electronic systems under extremely high temperatures. For the majority of such applications, silicon-based technologies (bulk silicon, silicon-on-insulator) are limited by their maximum operating temperature. Silicon carbide (SiC) has been recognized as one of the prime candidates for providing the desired semiconductor in extremely high-temperature applications. In addition, it has become particularly interesting owing to a Si-compatible process technology for dedicated devices and integrated circuits. This paper briefly introduces a variety of SiC-based integrated circuits for use under extremely high temperatures and covers the technology trend of SiC CMOS devices and processes including the useful implementation of SiC ICs.

키워드

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(그림 1) 고온에서의 동작이 필요한 응용분야

HJTOCM_2018_v33n6_1_f0002.png 이미지

(그림 2) C cluster를 감소 시키기 위한 High-k 물질을 이용한 게이트 절연막 구성

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(그림 3) SiC CMOS 기반 linear voltage regulator

HJTOCM_2018_v33n6_1_f0004.png 이미지

(그림 4) SiC CMOS 기반 OP amplifier

HJTOCM_2018_v33n6_1_f0005.png 이미지

(그림 5) ETRI의 6인치 기반 SiC 전력소자 (a) SBD, (b) MOSFET 제작 웨이퍼 및 SEM단면도

HJTOCM_2018_v33n6_1_f0006.png 이미지

(그림 6) ETRI에서 개발한 (a) SiC CMOS Inverter 및 (b) 전압전달특성

HJTOCM_2018_v33n6_1_f0007.png 이미지

(그림 7) SiC LIGBT소자 구조 및 전기적 특성: (a) LIGBT 단면도 및 제작 이미지, (b) 전기적특성 (왼쪽: Out-put 특성, 오른쪽: 항복전압)

<표 1> 기판재료에 따른 반도체 물성

HJTOCM_2018_v33n6_1_t0001.png 이미지

<표 2> 절연막 성장 및 전후처리 기술에 따른 계면특성 및 채널이동도

HJTOCM_2018_v33n6_1_t0002.png 이미지

<표 3> 고온에서 검증 된 오믹접촉 기술

HJTOCM_2018_v33n6_1_t0003.png 이미지

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