Acknowledgement
Supported by : National Natural Science Foundation of China
References
- J.A. del Alamo, Nanometre-scale electronics with III-V compound semiconductors, Nature 479 (2011) 317-323. https://doi.org/10.1038/nature10677
- C. Thelander, L.E. Frobergfroberg, C. Rehnstedt, et al., Vertical enhancement- mode InAs nanowire field-effect transistor with 50-nm wrap gate, IEEE Electron. Device Lett. 29 (3) (2008) 206-208. https://doi.org/10.1109/LED.2007.915374
- G. Mihajlovic, P. Xiong, S.V. Molnar, K. Ohtani, H. Ohno, et al., Detection of single magnetic bead for biological applications using an InAs quantum-well micro-Hall sensor, Appl. Phys. Lett. 87 (11) (2005) R182.
- Y. Yao, C. Liu, H. Qi, W. Wang, et al., Electrical conduction mechanism and photon-generated Carrier recombination process in amorphous InSb films, Curr. Appl. Phys. 11 (3) (2011) 620-623. https://doi.org/10.1016/j.cap.2010.10.010
- Y. Yao, B. Bo, C. Liu, X. Chang, Study of dark conductivity and photoconductivity in amorphous InAs films prepared at different working pressure, Sens. Transducers 93 (2014) 176-181.
- N.F. Mott, E.A. Davis, Electronic Processes in Non-crystalline Materials, Oxford University Press, 1979.
- L. Efros, B.I. Shklovskii, Electron-electron Interactions in Disordered Systems, North-Holland, (1985).
- T.G. Castner, Hopping conduction in the critical regime approaching the metal-insulator transition, in: M. Pollak, B. Shklovskii (Eds.), Hopping Transport in Solids, North-Holland, Amsterdam, 1991, pp. 1-49.
- B.I. Shklovskii, A.L. Efros, M. Cardona (Ed.), Electronic Properties of Doped Semiconductors, Springer-Verlag, Berlin, 1984, p. 228.
-
R. Rosenbaum, Crossover from Mott to Efros-Shklovskii variable-range- hopping conductivity in
$In_xO_y$ films, Phys. Rev. B 44 (8) (1991) 3599-3603. https://doi.org/10.1103/PhysRevB.44.3599 - A. Aharony, Y. Zhang, M.P. Sarachik, Universal crossover in variable range hopping with Coulomb interactions, Phys. Rev. Lett. 68 (26) (1996) 3900-3903.
- Y.L. Huang, S.P. Chiu, Z.X. Zhu, et al., Variable-range-hopping conduction processes in oxygen deficient polycrystalline ZnO films, J. Appl. Phys. 107 (6) (2010) 041301.
- X.Y. Zhang, J.S. Chawla, B.M. Howe, et al., Variable-range hopping conduction in epitaxial CrN(001), Phys. Rev. B 83 (83) (2011) 616-619.
Cited by
- Locally‐Strain‐Induced Heavy‐Hole‐Band Splitting Observed in Mobility Spectrum of p‐Type InAs Grown on GaAs vol.14, pp.4, 2018, https://doi.org/10.1002/pssr.201900604