• Journal of Magnetics
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• v.13 no.4
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• pp.132-135
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• 2008

The authors studied the conduction mechanism in an uranium doped low dimensional magnetic system $Ca_2CuO_3$. This system exhibits the S=1/2 quasi 1D antiferromagnetic chains of -Cu-O- with strong magnetic coupling, and demonstrates continuous semiconductor-like behavior with constant covalent insulator character. This paper identifies the conduction is due to thermally activated phonon-assisted electron hopping between dopant uranium sites. The parameter a, the characteristic for hopping probability, was determined to be 0.18 ${\AA}^{-1}$. This value manifests a relatively stronger hopping probability for $Ca_2CuO_3$ as compared with other uranium doped ceramics.

• Journal of the Korean Ceramic Society
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• v.31 no.12
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• pp.1529-1535
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• 1994

Electrical conduction mechanisms of RuO2-based thick film resistors were investigated with frequency depandence on AC conductivity. Electrical conduction mechanisms of lower resistivity system (100{{{{ OMEGA }}/sq) sintered at 600~90$0^{\circ}C$ were all metallic conduction mechanism. In case of higher resistivity (10K{{{{ OMEGA }}/sq) system, the electrical conduction mechanisms were very depenent on sintering temperature. When sintering temperature was $600^{\circ}C$, the electrical conduction mechamism was ionic, and as increasing the sintering temperature, the electrical conduction mechanism was changed from ionic to hopping conduction mechanism.

• Current Applied Physics
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• v.18 no.12
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• pp.1492-1495
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• 2018

This paper studies the influence of temperature on electrical resistivity in ${\alpha}-InAs$ thin films between 30 K-2K based on the analysis of Mott VRH model and ES VRH model. The effect of the interactions between electrons at lower temperature must be considered, therefore, ES VRH conduction will dominate mechanism, and the crossover from Mott to ES VRH conduction is observed about 7 K. Based on available experiment data and VRH conduction model, the parameters of VRH conduction are determined. And the calculated values of $T_C$ are consistent with the experimental results. In addition, $R_M/{\xi}$, ${\Delta}_M/kT$, $R_{ES}/{\xi}$ and ${\Delta}_{ES}/kT$ are satisfied with the validity of Mott and ES models. Furthermore, the temperature dependence of resistivity at low temperature obeys a universal scaling law, which well describes the overall temperature range of VRH conduction. However, the values of $T^{\prime}_M$ from the universal function are two order of magnitudes lower than $T_M$ deduced from fitting experiment.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.3
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• pp.220-226
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• 2002

Amorphous $Sb_{2-x}Bi_xTe_3$ (x = 0.0, 0.5 and 1.0) thin films were prepared by vacuum evaporation. The resistivity of 7he films decreases from 1.4{\times}10^{-2}$ to $8.84{\times}10^{-5}\Omega cm$ and the type of conductivity changes from p to n with the increase of the x value of the films. D.C. conduction studies on these films ate performed at various electric fields in the temperature range of 303-403 K. At low electric fields, two types of conduction mechanisms, i.e. the variable range hopping and the phonon assisted hopping are found to be responsible for the conduction, depending upon the temperature. The activation energy decreases from 0.082 to 0.076 eV in the temperature range of 303-363 K and from 0.47-0.456 eV in the second range of 363-403 K, indicating the shift of the Fermi level towards the conduction band edge and hence the change of the conduction from P to n type with the increase of the Bi concentration. Poole-Frankel emission dominates at high fields. The shape of the potential well of the localized centre is deduced and the mean free path of the charge carriers is also calculated.

• Electrical & Electronic Materials
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• v.10 no.2
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• pp.97-104
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• 1997

In this paper, in order to investigate the behavior of charged particles on (Sr.Ca)TiO$_{3}$ ceramics with paraelectric properties, the characteristics of electrical conduction and thermally stimulated current was measured respectively. As a result, the conduction mechanism is divided into three regions having different mechanism as the current increased. The region I below 200[V/Cm] shows the ohmic conduction. The region B between 200[V/cm] and 2000[V/cm] can be explained by the Poole-Frenkel emission theory, and the region III above 2000[V/cm] is dominated by the tunneling effect. The three peaks of TSC were obtained at the temperature of -20[.deg. C], 20[.deg. C] and 80[.deg. C], respectively. The origins of these peaks are that the .alpha. peak observed at -20[.deg. C] looks like to be ascribed to the ionization excitation from donor level in the grain, and the .alpha.' peak observed at 20 [.deg. C] appears to show up by hopping conduction of the trapped carrier of border between the oxidation layer and the grain, and the .betha. peak observed at 80[.deg. C] seems to be resulted from hopping conduction of existing carrier in the trap site of the border between the oxidation and second phase.

• Korean Journal of Materials Research
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• v.21 no.7
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• pp.377-383
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• 2011

Thermoelectric power, dc conductivity, and the dielectric relaxation properties of $La_2NiO_{4.03}$ are reported in the temperature range of 77 K - 300 K and in a frequency range of 20 Hz - 1 MHz. Thermoelectric power was positive below 300K. The measured thermoelectric power of $La_2NiO_{4.03}$ decreased linearly with temperature. The dc conductivity showed a temperature variation consistent with the variable range hopping mechanism at low temperatures and the adiabatic polaron hopping mechanism at high temperatures. The low temperature dc conductivity mechanism in $La_2NiO_{4.03}$ was analyzed using Mott's approach. The temperature dependence of thermoelectric power and dc conductivity suggests that the charge carriers responsible for conduction are strongly localized. The relaxation mechanism has been discussed in the frame of the electric modulus and loss spectra. The scaling behavior of the modulus and loss tangent suggests that the relaxation describes the same mechanism at various temperatures. The logarithmic angular frequency dependence of the loss peak is found to obey the Arrhenius law with activation energy of ~ 0.106eV. At low temperature, variable range hopping and large dielectric relaxation behavior for $La_2NiO_{4.03}$ are consistent with the polaronic nature of the charge carriers.

• Korean Journal of Materials Research
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• v.20 no.3
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• pp.161-166
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• 2010

The ac, dc conductivity and dielectric properties of $DyCoO_3$ were reported in the temperature range of 77 - 300K and in the frequency range of 20 Hz - 100 kHz. It was observed that at low temperature, ac conductivity is much higher than dc conductivity and the hopping carrier between localized states near the Fermi level was the dominant loss mechanism. A comparison of the measured ac conductivity $\sigma(\omega)$ was made with some of the models of hopping conductivity of the proposed earlier in the literature. It was observed that in $DyCoO_3$ the measured ac conductivity, over the entire frequency and temperature region, can be explained reasonably well by assuming two contributions $\sigma_1(\omega)$ and $\sigma_2(\omega)$ to the measured $\sigma(\omega)$. The first, $\sigma_1(\omega)$, which dominates at low temperature, may be due to impurity conduction in a small polaron; the second, $\sigma_2(\omega)$, which dominates at higher temperatures, depending on the frequency of measurements, may be due to the hopping of a small polaron and is reasonable for the dielectric relaxation peak.

• Bulletin of the Korean Chemical Society
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• v.11 no.4
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• pp.339-342
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• 1990

$Gd_2O_3-ThO_2$ solid solutions containing 8,10 and 12 mol % $ThO_2$ were synthesized with spectroscopically pure $Gd_2O_3,$ and $ThO_2$ polycrystalline powders. X-ray diffraction revealed that all synthesized specimens have the modified fluorite structure, and the lattice parameter of $Gd_2O_3$ is nearly unchanged with increasing $ThO_2$ mol %. Both ac and dc conductivities were measured in the temperature range $500-1100^{\circ}C$ under $Po_2's$ from $10^{-6}$ to $10^{-1}$ atm. The dc conductivities are nearly independent of $Po_2,$ and agree with the ac values. This implies that the solid solutions are ionic conductors. The conductivity increases with increasing $ThO_2$ mol % with an average activation energy of 1.23 eV. An oxygen interstitial defect and ionic hopping conduction are suggested.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.966-969
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• 2003

Thin film capacitors with Al-Polymer-Al sandwich structure were fabricated. The bottom and top aluminium (Al) electrodes were deposited by vacuum evaporation and copper phthalocyanine (CuPc), polyaniline-emeraldine base (Pani-EB) and cobalt phthalocyanine/polyaniline - emeraldine base (CoPc /Pani-EB) blend films (which can be used as buffer hole injection layer in OLEDs) were deposited by spin coating technique. X-ray diffractograms indicated amorphous nature of the polymer films whose thicknesses were measured by capacitance and Rutherford Backscattering Spectrometry (RBS) methods. AC conduction studies revealed that the conduction mechanism responsible in these films is variable range hopping of polarons. From D.C conduction studies, it is observed that, the nature of conduction is ohmic in the lower fields and at higher fields the dominating D.C conduction is of Poole-Frenkel type.

• Journal of the Korean Ceramic Society
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• v.32 no.8
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• pp.957-965
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• 1995

The ionic conductivityof NASICON solid electrolytes was simulated by using Monte Carlo Method (MCM) based on a hopping model as functions of temoperature and composition. Two conduction paths were used : jumping from Na1 to Na2 and jumping from Na1 to Na2 and jumping from Na2 to Na2. Vacancy availability factor, V was affected by composition, temperature and the conduction paths. For β"-Alumina, it was known that the minimum of charge correlation factor, fc appears at the composition, p=0.5, but there was not shown the minimum of fc for NASICON. When the NASICON composition, x, approaches 2.5, the curve of In σT vs. 1/T* was shown Arrhenius behavior and also In (VWfc) was a linear function of 1/T*. The results of simulations on the considered conduction paths didn't agree with the experimental results. Thus it will be necessary to include the another Na sites as mid-Na site on the conduction path to obtain the better results.