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Institute of Korean Electrical and Electronics Engineers (한국전기전자학회)
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UV/O3 Process Time Effect on Electrical Characteristics of Sol-gel Processed CuO Thin Film Transistor

UV/O3 조사 시간에 따른 Sol-gel 공정 기반 CuO 박막 트랜지스터의 전기적 특성 변화

  • Lee, Sojeong (School of Electronics Engineering, Kyungpook National University) ;
  • Jang, Bongho (School of Electronics Engineering, Kyungpook National University) ;
  • Kim, Taegyun (School of Electronics Engineering, Kyungpook National University) ;
  • Lee, Won-Yong (School of Electronics Engineering, Kyungpook National University) ;
  • Jang, Jaewon (School of Electronics Engineering, Kyungpook National University)
  • Received : 2018.02.26
  • Accepted : 2018.03.20
  • Published : 2018.03.31
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Abstract

In this research, sol-gel processed CuO p-type thin film transistors were fabricated with copper (II) acetate monohydrate precursors. After $500^{\circ}C$ annealing process, the deposited thin films were fully converted into CuO. We investigated $UV/O_3$ process time effect on electrical characteristics of sol-gel processed CuO thin film transistors. After 600 sec $UV/O_3$ process, the fabricated CuO thin film transistor delivered field effect mobility in saturation regime of $5{\times}10^{-3}\;cm^2/V{\cdot}s$ and on/off current ratio of ${\sim}10^2$.

Sol-gel 공법을 이용하여, p-형 CuO 박막 트랜지스터를 제작하였다. 제작된 CuO 박막 트랜지스터는 copper (II) acetate monohydrate 를 전구체로 사용하였다. $500^{\circ}C$ 열처리 후에 형성된 전구체는 p-형 CuO 박막이 됨을 확인하였다. 또한 전구체를 형성하기 전 기판표면의 $UV/O_3$ 조사량에 따른 CuO 박막 트랜지스터의 전기적 특성변화에 대하여 연구하였으며, 600 초동안 $UV/O_3$를 조사한 경우 제작된 CuO 박막 트랜지스터는 $5{\times}10^{-3}\;cm^2/V{\cdot}s$ 의 이동도와 약 $10^2$의 온/오프 전류비를 보여주었다.

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