Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
권호 표지

Stability of Gas Response Characteristics of IGZO

IGZO 박막의 CO2 가스 반응에 대한 안정성

  • Oh, Teresa (Division of Semiconductor, Choenju University)
  • Received : 2018.07.31
  • Accepted : 2018.09.15
  • Published : 2018.09.30
Download PDF
⟨ Previous Next ⟩

Abstract

IGZO thin films were prepared on n-type Si substrates to research the interface characteristics between IGZO and substrate. After the annealing processes, the depletion layer was formed at the interface to make a Schottky contact owing to the electron-hall fair recombination. The carrier density was decreased by the effect of depletion layer and the hall mobility decreased during the deposition processes. But the annealing effect of depletion layer increased the hall mobility because of the increment of potential barrier and the extension of depletion layer. It was confirmed that it is useful to observe the depletion effect and Schottky contact's properties by complementary using the Hall measurement and I-V measurement.

Keywords

References

  1. Oleg Mitrofanov & Michael Mantra. Poole-Frenkel Electron Emission from the Traps in AlGaN/GaN Transistors. J. Appl. Phys. 95, 6414-6419, (2004). https://doi.org/10.1063/1.1719264
  2. Sang-Heon Lee, Keon-Tae Park, and Young-Guk Son. "Electrochemical Characteristics of Silicon-Doped Tin Oxide Thin Films". Korean Journal of Materials Research. 12, pp 240-247, (2002). https://doi.org/10.3740/MRSK.2002.12.4.240
  3. Z. M. Jarzebski and J. P. Marton, "Physical Properties of $SnO_2$ Materials I. Preparation and Defect Structure," Journal of the electrochemical Society, 123, pp. 199-203, (1976). https://doi.org/10.1149/1.2133010
  4. Gwangpyo Choi, Hyunwook Ryu, Yongjin Seo, Woosun Lee, Kwangjun Hong, Dongcharn Shin, Jinseong Park and Sheikh A. Akbar. "Cauliflower Hillock Formation through Crystallite Migration of SnO2 Thin Films Prepared on Alumina Substrates by Using MOCVD". Journal of the Korean Physical Society, 43, No. 6, pp. L967-L971, (2003).
  5. Paranjape MA, Mane AU, Raychaudhuri AK, Shalini K, Shivashankar SA, Chakravarty BR, "Metal-organic chemical vapour deposition of thin films of cobalt on different substrates: study of microstructure", Thin Solid Films, 413(1-2), pp.8-15, (2002). https://doi.org/10.1016/S0040-6090(02)00446-7
  6. V. Vasu and A. Subrahmanyam, "Electrical and optical properties of sprayed $SnO_2$ films", Thin Solid Film, 193/194, pp. 973-980, (1990). https://doi.org/10.1016/0040-6090(90)90252-9
  7. Randhawa. H.S, Matthews. M.D, Bunshah, R.F, "$SnO_2$ films prepared by activated reactive evaporation", Thin Solid Films, 83, pp. 267-271, (1967).
  8. Teresa Oh, "Electrical Characteristics of Thin Film Transistor According to the Schottky Contacts", Korean Journal of Materials Research, 24, pp. 135-139, (2014). https://doi.org/10.3740/MRSK.2014.24.3.135
  9. Yoo Duk-yean, Kim Hyoung-ju, Kim Jun-yeong, Jo Jung-yol, "Current Variation in ZnO Thin-Film Transistor under Different Annealing Conditions," Journal of the Semiconductor & Display Technology Vol.13, pp.63-66, No.1, (2014).
  10. Hong Woo Lee, Bong Seob Yang, Seungha Oh, Yoon Jang Kim and Hyeong Joon Kim, "The Properties of RF Sputtered Zinc Tin Oxide Thin Film Transistors at Different Sputtering Pressure", J. of The Korean Society of Semiconductor & Display Technology, 13, pp. 43-49, (2014).
  11. Kenji Normura, Toshio Kamiya and Hideo Hosono, "Ambipolar Oixde Thin-Film Transistor", Adv. Mater. 23, pp. 3431-3434, (2011). https://doi.org/10.1002/adma.201101410
  12. Teresa Oh, Tunneling Phenomenon of amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors for Flexible Display, Electronic Materials Letters, 11. pp. 853-861, (2015). https://doi.org/10.1007/s13391-015-4505-3
  13. Teresa Oh, "Ohmic Contact Effect and Electrical Characteristics of ITO Thin Film Depending on SiOC Insulator" Korean J. Mater. Res. 25, No. 7, pp. 1149-1154, (2015).