InGaAs 위의 NH3 Plasma Passivation을 이용한 ALD HfAlO유전체 계면전하(Dit) 향상

Improved Dit between ALD HfAlO Dielectric and InGaAs Substrate Using NH3 Plasma Passivation

  • 최재성 (극동대학교 과학기술대학 반도체장비공학과)
  • Choi, Jae Sung (Department of Semiconductor Equipment Engineering, Far East University)
  • 투고 : 2018.11.04
  • 심사 : 2018.12.18
  • 발행 : 2018.12.31

초록

The effect of $NH_3$ plasma passivation on the chemical and electrical characteristics of ALD HfAlO dielectric on the InGaAs substrate was investigated. The results show that $NH_3$ plasma passivation exhibit better electrical & chemical performance such as much lower leakage current, lower density of interface trap(Dit) level, and low unstable interfacial oxide. $NH_3$ plasma passivation can effectively enhance interfacial characteristics. Therefore $NH_3$ plasma passivation improved the HfAlO dielectric performance on the InGaAs substrate.

키워드

참고문헌

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