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Microstructure and Thermal Insulation Properties of Ultra-Thin Thermal Insulating Substrate Containing 2-D Porous Layer

2차원 기공층을 포함하는 초박형 단열기판의 미세구조 및 단열 특성

  • Yoo, Chang Min (Electronic Convergence Materials Division, Korea Institute of Ceramic Engineering and Technology) ;
  • Lee, Chang Hyun (Electronic Convergence Materials Division, Korea Institute of Ceramic Engineering and Technology) ;
  • Shin, Hyo Soon (Electronic Convergence Materials Division, Korea Institute of Ceramic Engineering and Technology) ;
  • Yeo, Dong Hun (Electronic Convergence Materials Division, Korea Institute of Ceramic Engineering and Technology) ;
  • Kim, Sung Hoon (Department of Engineering in Energy & Applied Chemistry, Silla University)
  • 유창민 (한국세라믹기술원 전자융합소재본부) ;
  • 이창현 (한국세라믹기술원 전자융합소재본부) ;
  • 신효순 (한국세라믹기술원 전자융합소재본부) ;
  • 여동훈 (한국세라믹기술원 전자융합소재본부) ;
  • 김성훈 (신라대학교 에너지응용화학과)
  • Received : 2017.08.21
  • Accepted : 2017.09.18
  • Published : 2017.11.01

Abstract

We investigated the structure of an ultra-thin insulating board with low thermal conductivity along z-axis, which was based on the idea of void layers created during the glass infiltration process for the zero-shrinkage low-temperature co-fired ceramic (LTCC) technology. An alumina and four glass powders were chosen and prepared as green sheets by the tape casting method. After comparison of the four glass powders, bismuth glass was selected for the experiment. Since there is no notable reactivity between alumina and bismuth glass, alumina was selected as the supporting additive in glass layers. With 2.5 vol% of alumina powder, glass green sheets were prepared and stacked alternately with alumina green sheet to form the 'alumina/glass (including alumina additive)/alumina' structure. The stacked green sheets were sintered into an insulating substrate. Scanning electron microscopy revealed that the additive alumina formed supporting bridges in void layers. The depth and number of the stacking layers were varied to examine the insulating property. The lowest thermal conductivity obtained was 0.23 W/mK with a $500-{\mu}m-thick$ substrate.

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References

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