Journal of Electrochemical Science and Technology

  • 제8권3호
  • /
  • Pages.206-214
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  • 2017
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  • 2093-8551(pISSN)
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  • 2288-9221(eISSN)
한국전기화학회 (The Korean Electrochemical Society)
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Electrodeposition of SnS Thin film Solar Cells in the Presence of Sodium Citrate

  • Kihal, Rafiaa (Laboratoire d'Analyses Industrielles et Genie des Materiaux, Departement de Genie des Procedes, Faculte des Sciences et de la Technologie) ;
  • Rahal, Hassiba (Laboratoire d'Analyses Industrielles et Genie des Materiaux, Departement de Genie des Procedes, Faculte des Sciences et de la Technologie) ;
  • Affoune, Abed Mohamed (Laboratoire d'Analyses Industrielles et Genie des Materiaux, Departement de Genie des Procedes, Faculte des Sciences et de la Technologie) ;
  • Ghers, Mokhtar (Laboratoire d'Etude des Surfaces et Interfaces de la Matiere Solide, Departement de Physique, Faculte des Sciences, Universite Badji Mokhtar Annaba)
  • 투고 : 2017.04.08
  • 심사 : 2017.06.21
  • 발행 : 2017.09.30
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초록

SnS films have been prepared by electrodeposition technique onto Cu and ITO substrates using acidic solutions containing tin chloride and sodium thiosulfate with sodium citrate as an additive. The effects of sodium citrate on the electrochemical behavior of electrolyte bath containing tin chloride and sodium thiosulfate were investigated by cyclic voltammetry and chronoamperometry techniques. Deposited films were characterized by XRD, FTIR, SEM, optical, photoelectrochemical, and electrical measurements. XRD data showed that deposited SnS with sodium citrate on both substrates were polycrystalline with orthorhombic structures and preferential orientations along (111) directions. However, SnS films with sodium citrate on Cu substrate exhibited a good crystalline structure if compared with that deposited on ITO substrates. FTIR results confirmed the presence of SnS films at peaks 1384 and $560cm^{-1}$. SEM images revealed that SnS with sodium citrate on Cu substrate are well covered with a smooth and uniform surface morphology than deposited on ITO substrate. The direct band gap of the films is about 1.3 eV. p-type semiconductor conduction of SnS was confirmed by photoelectrochemical and Hall Effect measurements. Electrical properties of SnS films showed a low electrical resistivity of $30{\Omega}cm$, carrier concentration of $2.6{\times}10^{15}cm^{-3}$ and mobility of $80cm^2V^{-1}s^{-1}$.

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피인용 문헌

  1. Electrodeposition of Single Phase SnS Thin Films: Effect of Electrolytic Bath Temperature on the Final Film Properties vol.166, pp.2, 2019, https://doi.org/10.1149/2.0661902jes